唐奈歐

LPCVD-Synthesized Few-Layer h-BN: Effects of Growth Pressure and Precursor Flow Rate on Film Thickness and Quality

國際半導體人才教育專班

六方氮化硼、低壓化學氣相沉積、成長壓力、前驅物流量、薄膜特性分析、hexagonal boron nitride、low-pressure chemical vapor deposition、growth pressure、precursor flow rate、thin-film characterization

Process Integration and Electrical Characterization of Enhancement-Mode Gate-Recessed GaN MISHEMTs and Vertical GaN-on-GaN Power Devices

國際半導體人才教育專班・共同指導：吳添立

氮化鎵功率元件、AlGaN/GaN MISHEMT、閘極凹槽、雙向開關、動態導通電阻、崩潰電壓、垂直式 GaN-on-GaN 元件、GaN power devices、AlGaN/GaN MISHEMTs、gate recess、bidirectional switch、dynamic on-resistance、breakdown voltage、vertical GaN-on-GaN devices.

Study on Performance, Reliability and Dynamic Switching Stability in Wide-Bandgap (GaN/ β-Ga2O3) Power Diodes and p-GaN HEMTs

國際半導體產業學院

蕭特基二極體、閘極邊緣終端保護結構、p型氮化鎵高電子遷移率電晶體、Sentaurus TCAD、正偏壓溫度不穩定性、動態開關穩定性、Schottky Barrier Diode (SBD)、Gate Edge Termination (GET)、p-GaN HEMT、Positive Bias Temperature Instability、Dynamic Switching Stability

Electrical and Physical Properties of SiC MISCAP with a PECVD Boron Nitride layer

國際半導體人才教育專班

碳化矽、氮化硼、電漿輔助化學氣相沉積、金屬-絕緣體-半導體電容、介電薄膜、Silicon carbide (SiC)、Boron nitride、PECVD、MIS capacitor、Dielectric thin film

Study of Gate Failure Mechanisms in RF GaN MISHEMTs with Thin SiN Gate Dielectrics and Process Optimization and Electrical Characterization of Ga2O3 Power Devices

國際半導體產業學院・共同指導：吳添立

GaN MISHEMT、閘極崩潰、薄 SiN 介電層、可靠度、時變介電層崩潰（TDDB）、Ga2O3、蕭特基二極體、MOSFET、超寬能隙半導體、Gate Breakdown、thin SiN dielectric、reliability、TDDB、Schottky barrier diode、ultra-wide bandgap semiconductors.

Study of Dynamic Trapping Phenomena in RF AlGaN/GaN HEMTs: Buffer Hysteresis, Trapping Locations, and RF Swing/Gate-Drain Lag Analysis

國際半導體產業學院・共同指導：吳添立

GaN HEMT、電荷捕獲、電流崩塌、緩衝層遲滯、I-DLTS、RF 擺幅、碳摻雜、Charge Trapping、Current Collapse、Buffer Hysteresis、RF Swing、Carbon Doping

Fabrication and Reliability of Hf0.5Zr0.5O2/Si:HfO2 Ferroelectric planar FETs/FinFETs on Si and reliability study in Metal–Ferroelectric–Insulator– Semiconductor capacitors on SiGe

國際半導體產業學院・共同指導：吳添立

鐵電場效電晶體（FeFET）、可靠度、Hf0.5Zr0.5O2 （HZO）、Si:HfO2 （HSO）、介面層工程、FeFET 切換、FeFinFET、SiGe 上之 HSO。、Ferroelectric FET (FeFET)、Reliability、Hf0.5Zr0.5O2 (HZO)、Si:HfO2 (HSO)、Interlayer Engineering、FeFET switching、HSO on SiGe.

Study of BTI, TDDB, Electrical Properties, and Conduction Mechanisms in 4H-SiC MOSFETs and MOSCAPs with Different Oxidation Processes and Treatments

國際半導體產業學院・共同指導：吳添立

MOS 電容、閘極氧化層可靠性、界面態密度、閘極漏電導電機制、正偏壓溫度不穩定性（PBTI）、時間相依介電擊穿（TDDB）、4H-SiC MOSFET、MOS Capacitor、Gate Oxide Reliability、Interface Trap Density、Gate Leakage Conduction Mechanisms、PBTI、TDDB

Gas sensing properties of Mg-doped Multilayered hBN

智慧醫電工程研究所・共同指導：陳稷康

氮化硼、鎂、摻雜、氣體感測、一氧化氮、氨、hBN、magnesium (Mg)、doping、gas sensing、nitric oxide (NO)、ammonia (NH3)

Exploring Ferroelectric Characteristics Across Diverse Structures: Impact of Interlayers, Ultrathin Electrodes, Solid Phase Epitaxy, and Advanced Applications

國際半導體產業學院

鐵電、HZO 電容器、第一類反轉曲線（FORC）、可靠性、壓電響應力顯微術（PFM）、有限成核開關模型（NLS）、介面層工程、Ferroelectric、HZO-based Capacitor、First-Order Reverse Curve、Reliability、PFM、Nucleation Limited Switching Model、Interlayer Engineering

Fermi Level Analysis of Multilayer Hexagonal Boron Nitride and Electrical Properties of Mg-Doped hBN for Device Integration

國際半導體產業學院

大氣壓化學氣相沉積（APCVD）、六方氮化硼（hBN）、熱穩定性、交流導電度、接觸電阻、hBN/β-Ga₂O₃ 異質接面二極體（pn 結）、APCVD、hexagonal boron nitride (hBN)、thermal stability、AC conductivity、contact resistance、hBN/β-Ga₂O₃ pn heterojunction

Investigations of the Device Fabrication, Electrical Characterization and Reliability Analysis of GaN-on-GaN Vertical PN Junction Diode and Ga2O3 Vertical Schottky Barrier Diode

國際半導體產業學院・共同指導：吳添立

GaN、β-Ga2O3、垂直型、變溫特性、表面處理、場板、可靠度、vertical、temperature-dependent performance、surface treatment、field-plate、reliability

Investigation of Hot Electron Degradation Mechanisms and High Voltage Switching Reliability in Power p-GaN HEMTs

國際半導體產業學院・共同指導：吳添立

氮化鎵、功率元件、高壓元件、動態電阻、可靠度、GaN、Power device、High voltage、Dynamic on-resistance、Reliability

Device Fabrication and Characterization of AlGaN/GaN Power MISHEMTs with Various Substrates and Dielectrics: Exploration of Dual-Gate Bidirectional Switches and 3D Integrated Cascode Configurations

國際半導體產業學院・共同指導：吳添立

氮化鎵金氧半導體高電子遷移率電晶體、碳化矽基板、氮氧化矽介電層、氮氧化鋁介電層、雙向開關、非晶系銦鎵鋅氧薄膜電晶體、疊接 結構、三維整合、GaN MISHEMTs、SiON dielectric、AlON dielectric、QST、High breakdown voltage power device、Cascode configuration、3D Integration、a-IGZO TFTs

Exploring p-type GaN High Electron Mobility Transistors and Innovative AlGaN/GaN Schottky Diodes with p-GaN Edge Structures: Analyzing the Impact of AlN Etching Stop Layers, QST Substrates, and Bidirectional Conduction Characteristics

國際半導體產業學院・共同指導：吳添立

氮化鎵、功率元件、p型氮化鎵高電子遷移率電晶體、氮化鋁蝕刻終止層、Qromis基板技術、蕭特基二極體、p型氮化鎵邊緣結構、雙閘極結構、雙向導通特性、Gallium nitride、Power device、p-GaN gate HEMTs、AlN etching stop layer、Quasi-Substrate Technology、Schottky Barrier Diodes、p-GaN edge structures、Dual-gate structure、Bidirectional conduction characteristics

Characterizations and fabrications of Vertical GaN-on-GaN PN Diodes and Bi-directional p-GaN HEMTs

國際半導體產業學院・共同指導：吳添立

氮化鎵、垂直元件、溫度依賴性、串聯電阻、離子植入隔離、場板、階梯電流應力、恆定電流應力、反向與鬆弛、雙向 p-GaN HEMT、GaN、Vertical device、Temperature-Dependent、Series resistant、Implant Isolation、Field plate、Current Step Stress、Constant Current Stress、Reverse and relaxation、Bi-directional p-GaN HEMT

Reliability Investigations of β-Ga2O3 Metal-Oxide- Semiconductor Capacitor/ Schottky Barrier Diode/ Metal- Oxide-Semiconductor Field-Effect Transistor/ and SiC Power Metal-Oxide-Semiconductor Field-Effect Transistor with Third Quadrant Operation

國際半導體產業學院・共同指導：吳添立

β-Ga₂O₃、SiC、高功率電子元件、高溫應用、MOS電容、氧空位陷阱、後沉積退火（PDA）、蕭特基二極體、電場分佈、崩潰電壓、磊晶結構、橫向MOSFET、熱穩定性、UID緩衝層、SiC MOSFET、內建二極體溫度感測、VSD-T方法、溝槽閘極結構、元件可靠性、製程優化、材料特性、結構設計、high-power electronics、high-temperature devices、MOSCAP、Schottky Barrier Diode (SBD)、oxygen vacancy traps、post-deposition annealing (PDA)、epitaxial growth、lateral MOSFET、trench-gate structure、VSD-T method、thermal reliability、process optimization

Thermal modeling of 3DIC with the effect of through-silicon vias (TSVs)

國際半導體產業學院・共同指導：王啟川

3DIC 封裝、數值模擬、矽穿孔、熱阻、晶片散熱、3DIC package、Numerical simulation、through-silicon via、Thermal resistance、package level cooling

Process development of monolayer graphene for future application

國際半導體越南境外專班

石墨烯、二維材料、Graphene、2D materials、CVD

Formation of crystalline ultra-large orientated triangular graphitic domains from diamond-like-carbon films on Si/SiO2 substrate

國際半導體產業學院

石墨烯、類鑽碳、射頻濺鍍、真空退火處理、氨硼烷催化、graphite、diamond like carbon、RF sputter、vaccuum annealing system、ammonia borane catalyze

Thermal stability, stoichiometric variation and work function analysis in 2D mono – and multilayered hBN films

越南境外碩士專班

六方氮化硼 (hBN)、單層 (MNL)、多層 (ML)、熱穩定性、功函、X射線光電子能譜 (XPS)、通過開爾文探針力顯微鏡 (KPFM)、結合能、APCVD、Hexagonal Boron Nitride (hBN)、monolayer (MNL)、multilayer (ML)、thermal stability、workfunction、XPS、KPFM、Binding energy

RF magnetron sputtering and AC Conductivity properties of Hexagonal Boron Nitride thin films

越南境外碩士專班

六方最密氮化硼、交流電導率、射頻濺鍍、電介質、電容、Hexagonal boron nitride、AC conductivity、RF sputter、dielectric、capacitance