吳添立

Exploring and Reliability Research of p-GaN Power Devices on Si wafer and QST wafer: High Electron Mobility Transistors, Schottky Barrier Diodes, Bidirectional Devices, Split-Gate Devices and HEMTs integrated with SBD

電子研究所

氮化鎵、功率元件、p 型氮化鎵高電子遷移率電晶體、Qromis 基板技術、蕭特基二極體、雙閘極結構、雙向導通特性、Power devices、p-GaN HEMT、Qromis Substrate Technology、Schottky barrier diode、Dual-gate structure、Bidirectional conduction、GaN

Process Integration and Electrical Characterization of Enhancement-Mode Gate-Recessed GaN MISHEMTs and Vertical GaN-on-GaN Power Devices

國際半導體人才教育專班・共同指導：唐奈歐

氮化鎵功率元件、AlGaN/GaN MISHEMT、閘極凹槽、雙向開關、動態導通電阻、崩潰電壓、垂直式 GaN-on-GaN 元件、GaN power devices、AlGaN/GaN MISHEMTs、gate recess、bidirectional switch、dynamic on-resistance、breakdown voltage、vertical GaN-on-GaN devices.

Development and Reliability Study of sub-micron GaN-on-Si HEMTs for Quantum Computing and Space Applications

國際半導體產業學院・共同指導：拉金德拉·辛格、安庫爾·古普塔

GaN-on-Si MIS-HEMTs、低溫特性、伽瑪射線照射、低頻雜訊、射頻特性、可靠度、耐輻射電子系統、量子運算、Cryogenic Characterization、Gamma Irradiation、Low-Frequency Noise、RF Characterization、Reliability、Radiation-Hardened Electronics、Quantum Computing

Investigation of p-GaN/AlGaN/GaN Epitaxy-Based Power Devices: RESURF Gate Structure, Field Plate Configurations, Cathode-connected p-GaN Islands SBDs, Bidirectional Switches, and Embedded SBD in p-GaN HEMTs

前瞻半導體研究所

氮化鎵、高功率元件、p型氮化鎵高電子遷移率電晶體、減弱表面電場結構、閘極場平板、懸浮場平板、蕭特基二極體、雙向開關、雙閘極結構、反向導通、Gallium Nitride、high-power devices、p-GaN gate HEMTs、Reduced Surface Field (RESURF) structures、gate field plate、floating field plate、Schottky Barrier Diodes、bidirectional switching、dual-gate structures、reverse conduction

Enhancement of dielectric constant in Ferroelectric HZO by Increasing Zr Ratio to Approach Morphotropic Phase Boundary with Interfacial Stacking of TiO2 and Al2O3

國際半導體產業學院・共同指導：陳俊豪

鉿鋯氧化物、介電常數提升、同型相界、界面工程、二氧化鈦、氧化鋁、鐵電電容器、Hafnium-Zirconium Oxide、Enhancement of Dielectric Constant、Morphotropic Phase Boundary、Interfacial Engineering、Titanium Oxide、Aluminium Oxide、Ferroelectric Capacitor

Study on Gate Reliability of SiC Vertical Power MOSFETs, Monolithic Integration of Lateral SiC MOSFETs with Resistive Load Using Insulated Gate Structures, and Development of a Capacitorless GaN LDO Regulator

前瞻半導體研究所

碳化矽金氧半場效電晶體、元件閘極可靠度、氮化鎵高電子遷移率電晶體、電源管理積體電路、低壓差線性穩壓器、Gate Reliability、Gallium Nitride High Electron Mobility Transistor、Power Management Integrated Circuit、Low-dropout Regulator

Reliability Analysis of SiC VDMOS with Different Gate Structures and Implementation of SiC CMOS, p-GaN High-Voltage Analog Amplifiers, and GaN-based CL-LDO for Power Integrated Circuit Applications

國際半導體產業學院・共同指導：葉勝玄

寬能隙半導體、SiC垂直雙擴散金氧半場效電晶體、偏壓溫度不穩定性、SiC 互補式金氧半場效電晶體、p-GaN高電子遷移率電晶體、無輸出電容式低壓差線性穩 壓器、功率積體電路、Wide-bandgap semiconductor、SiC VDMOS、BTI、SiC CMOS、p-GaN HEMT、capacitorless LDO、Power IC

Characterization and Reliability Analysis of Vertical GaN Trench MOSFETs and InAlGaN/GaN MIS-HEMTs

前瞻半導體研究所

垂直氮化鎵金屬氧化物半導體溝槽場效電晶體、介面陷阱、次微米氮化銦鋁鎵/氮化鎵金屬-絕緣體-半導體高電子遷移率電晶體、浮接場效電板、氮化鎵、GaN、Vertical GaN trench MOSFET、interface traps、ubmicron InAlGaN/GaN MIS-HEMT、floating field plate

Study of Gate Failure Mechanisms in RF GaN MISHEMTs with Thin SiN Gate Dielectrics and Process Optimization and Electrical Characterization of Ga2O3 Power Devices

國際半導體產業學院・共同指導：唐奈歐

GaN MISHEMT、閘極崩潰、薄 SiN 介電層、可靠度、時變介電層崩潰（TDDB）、Ga2O3、蕭特基二極體、MOSFET、超寬能隙半導體、Gate Breakdown、thin SiN dielectric、reliability、TDDB、Schottky barrier diode、ultra-wide bandgap semiconductors.

Study of Dynamic Trapping Phenomena in RF AlGaN/GaN HEMTs: Buffer Hysteresis, Trapping Locations, and RF Swing/Gate-Drain Lag Analysis

國際半導體產業學院・共同指導：唐奈歐

GaN HEMT、電荷捕獲、電流崩塌、緩衝層遲滯、I-DLTS、RF 擺幅、碳摻雜、Charge Trapping、Current Collapse、Buffer Hysteresis、RF Swing、Carbon Doping

Fabrication and Reliability of Hf0.5Zr0.5O2/Si:HfO2 Ferroelectric planar FETs/FinFETs on Si and reliability study in Metal–Ferroelectric–Insulator– Semiconductor capacitors on SiGe

國際半導體產業學院・共同指導：唐奈歐

鐵電場效電晶體（FeFET）、可靠度、Hf0.5Zr0.5O2 （HZO）、Si:HfO2 （HSO）、介面層工程、FeFET 切換、FeFinFET、SiGe 上之 HSO。、Ferroelectric FET (FeFET)、Reliability、Hf0.5Zr0.5O2 (HZO)、Si:HfO2 (HSO)、Interlayer Engineering、FeFET switching、HSO on SiGe.

Defect/Trapping Mechanisms, Reliability, and Wide-Temperature Circuit Stability of WBG SiC MOSFETs and GaN HEMTs: Charge Pumping, BTI, and Dynamic Stress Analyses Extended to Monolithic Logic and Comparator Circuits

電子研究所・共同指導：顏順通

4H碳化矽N型功率金屬氧化物半導體場效電晶體、4H碳化矽P型功率金屬氧化 物半導體場效電晶體、p型閘極氮化鎵高電子遷移率電晶體、電荷泵浦、偏壓溫度不穩定 性、缺陷生成、碳化矽互補式反相器、碳化矽NOR閘、碳化矽NAND閘、碳化矽XOR、零電壓開關、硬開關、電流-深能級瞬態能譜、碳化矽SR正反器、低溫穩定性、邏輯電路可靠性、單晶整 合氮化鎵比較器、4H-SiC NMOSFET、4H-SiC PMOSFET、p-GaN gate HEMTs、Charge Pumping、Bias Temperature Instability、Defect Generation、SiC CMOS Inverter、SiC NOR Gate、SiC NAND Gate、SiC XOR、zero-voltage switching、hard-switching、I-DLTS、GaN RTL、GaN DCFL、GaN NOR、GaN NAND、GaN AND、GaN SR-Flip-Flop、cryogenic temperature stability、logic circuit reliability、monolithic GaN Comparator

Study of BTI, TDDB, Electrical Properties, and Conduction Mechanisms in 4H-SiC MOSFETs and MOSCAPs with Different Oxidation Processes and Treatments

國際半導體產業學院・共同指導：唐奈歐

MOS 電容、閘極氧化層可靠性、界面態密度、閘極漏電導電機制、正偏壓溫度不穩定性（PBTI）、時間相依介電擊穿（TDDB）、4H-SiC MOSFET、MOS Capacitor、Gate Oxide Reliability、Interface Trap Density、Gate Leakage Conduction Mechanisms、PBTI、TDDB

Ferroelectric Hf₀.₅Zr₀.₅O₂: Study of Conventional HZO in FeHEMT on GaN and Superlattice HZO in MFM Capacitors.

國際半導體越南境外專班

鐵電薄膜、鉿鋯氧化物（Hf₀.₅Zr₀.₅O₂)、鐵電高電子遷移率電晶體（FeHEMT）、AlGaN/GaN 異質接面、負電容效應、奈米層狀超晶格結構、金屬–鐵電–金屬（MFM）電容器、介電介面工程、原子層沉積（ALD)、電漿輔助原子層沉積 (PEALD)、固相外延（SPE)、時間依賴性介電擊穿（TDDB)、循環耐久性失效、氧源調控、Ferroelectric thin films、Hf₀.₅Zr₀.₅O₂ (HZO)、Ferroelectric HEMTs (FeHEMTs)、AlGaN/GaN heterostructures、Negative capacitance、Nanolaminate architectures、Dielectric interface engineering、Atomic layer deposition (ALD)、Plasma-enhanced ALD (PEALD)、Solid-phase epitaxy (SPE)、Time-dependent dielectric breakdown (TDDB)、Endurance failure

Investigation of the Performance and Reliability under Continuous High-Voltage Switching and Low-Temperature Stress Conditions in Power p-GaN HEMTs

國際半導體產業學院・共同指導：葉勝玄

p型氮化鎵高電子遷移率電晶體、快速開關狀態、硬開關、動態電阻、動態閾值電壓、低溫閘極可靠度、p-GaN gate HEMTs、hard-switching、dynamic on-resistance、dynamic threshold voltage、cryogenic temperature reliability

Advancing Reliability Characterization, Analysis, and Modeling in p-GaN Power HEMTs, SiC Power MOSFETs, and β-Ga2O3 Power Schottky Barrier Diode

國際半導體產業學院

p-GaN HEMTs、4H-SiC、β-Ga2O3 肖特基二極體（ SBD)、閾值電壓不穩定、閘極漏電流、可靠度分析模型建構、β-Ga2O3 SBD、VTH instability、gate leakage、reliability modeling

Investigations of the Device Fabrication, Electrical Characterization and Reliability Analysis of GaN-on-GaN Vertical PN Junction Diode and Ga2O3 Vertical Schottky Barrier Diode

國際半導體產業學院・共同指導：唐奈歐

GaN、β-Ga2O3、垂直型、變溫特性、表面處理、場板、可靠度、vertical、temperature-dependent performance、surface treatment、field-plate、reliability

Investigation of Hot Electron Degradation Mechanisms and High Voltage Switching Reliability in Power p-GaN HEMTs

國際半導體產業學院・共同指導：唐奈歐

氮化鎵、功率元件、高壓元件、動態電阻、可靠度、GaN、Power device、High voltage、Dynamic on-resistance、Reliability

Investigation of performance and reliability with RF AlGaN/GaN MISHEMTs with different gate and dielectric processes

前瞻半導體研究所

射頻氮化鋁鎵/氮化鎵金屬絕緣體半導體高電子遷移率電晶體、氮化矽、氮氧化矽、半開狀態、關閉狀態、碰撞游離、T型閘極、浮接場效電板、RF AlGaN/GaN MISHEMT、in-situ SiN、SiON、semi-on state、off-state、impact ionization、T-gate、sunken floating field plate

Device Fabrication and Characterization of AlGaN/GaN Power MISHEMTs with Various Substrates and Dielectrics: Exploration of Dual-Gate Bidirectional Switches and 3D Integrated Cascode Configurations

國際半導體產業學院・共同指導：唐奈歐

氮化鎵金氧半導體高電子遷移率電晶體、碳化矽基板、氮氧化矽介電層、氮氧化鋁介電層、雙向開關、非晶系銦鎵鋅氧薄膜電晶體、疊接 結構、三維整合、GaN MISHEMTs、SiON dielectric、AlON dielectric、QST、High breakdown voltage power device、Cascode configuration、3D Integration、a-IGZO TFTs

Exploring p-type GaN High Electron Mobility Transistors and Innovative AlGaN/GaN Schottky Diodes with p-GaN Edge Structures: Analyzing the Impact of AlN Etching Stop Layers, QST Substrates, and Bidirectional Conduction Characteristics

國際半導體產業學院・共同指導：唐奈歐

氮化鎵、功率元件、p型氮化鎵高電子遷移率電晶體、氮化鋁蝕刻終止層、Qromis基板技術、蕭特基二極體、p型氮化鎵邊緣結構、雙閘極結構、雙向導通特性、Gallium nitride、Power device、p-GaN gate HEMTs、AlN etching stop layer、Quasi-Substrate Technology、Schottky Barrier Diodes、p-GaN edge structures、Dual-gate structure、Bidirectional conduction characteristics

Fabrication and Characterization for RF AlGaN/GaN HEMT Device With Optimized Gate Structure

國際半導體越南境外專班

RF AlGaN/GaN HEMT、SiON、T型閘極、電場、漏電流、T-gate、electric field、leakage current

Characterizations and fabrications of Vertical GaN-on-GaN PN Diodes and Bi-directional p-GaN HEMTs

國際半導體產業學院・共同指導：唐奈歐

氮化鎵、垂直元件、溫度依賴性、串聯電阻、離子植入隔離、場板、階梯電流應力、恆定電流應力、反向與鬆弛、雙向 p-GaN HEMT、GaN、Vertical device、Temperature-Dependent、Series resistant、Implant Isolation、Field plate、Current Step Stress、Constant Current Stress、Reverse and relaxation、Bi-directional p-GaN HEMT

Reliability Investigations of β-Ga2O3 Metal-Oxide- Semiconductor Capacitor/ Schottky Barrier Diode/ Metal- Oxide-Semiconductor Field-Effect Transistor/ and SiC Power Metal-Oxide-Semiconductor Field-Effect Transistor with Third Quadrant Operation

國際半導體產業學院・共同指導：唐奈歐

β-Ga₂O₃、SiC、高功率電子元件、高溫應用、MOS電容、氧空位陷阱、後沉積退火（PDA）、蕭特基二極體、電場分佈、崩潰電壓、磊晶結構、橫向MOSFET、熱穩定性、UID緩衝層、SiC MOSFET、內建二極體溫度感測、VSD-T方法、溝槽閘極結構、元件可靠性、製程優化、材料特性、結構設計、high-power electronics、high-temperature devices、MOSCAP、Schottky Barrier Diode (SBD)、oxygen vacancy traps、post-deposition annealing (PDA)、epitaxial growth、lateral MOSFET、trench-gate structure、VSD-T method、thermal reliability、process optimization

Investigation of 4H-SiC Power Device Reliability and Design a Gate Driver Circuit and Modeling the Characteristics of 4H-SiC Planar MOSFETs Using Explainable AI

前瞻半導體研究所

碳化矽金氧半場效電晶體、雙脈衝動態量測、開關損耗、主動式閘極驅動電路、機器學習、全連接類神經網路、步進應力反向偏壓、依時性介電層崩潰、可解釋人工智慧、Double Pulse test Measurement、Switching Loss、Active Gate Driver Circuit、Machine Learning、Fully Connected Neural Network、Drain Step Stress、Time-Dependent Dielectric Breakdown (TDDB)、Explainable AI (XAI)

Dependence of Crystallinity and Ferroelectricity in Ultra-thin Ferroelectric Hf1-xZrxO2 Capacitors

國際半導體產業學院・共同指導：侯拓宏

鐵電Hf1-xZrxO2 薄膜、鐵電電容、厚度微縮、結晶度、喚醒效應、IL-SBD、ferroelectric Hf1-xZrxO2 film、ferroelectric capacitance、thickness scaling、crystallinity、wake-up effect

Development and Reliability Analysis of High-Voltage GaN Power MISHEMTs with SiON/AlON Dielectrics and 3D Integrated Cascode with a-IGZO Thin-Film Transistors

國際半導體產業學院

氮化鎵金氧半導體高電子遷移率電晶體、氮氧化矽介電層/氮氧化鋁介電層、Qromis基板技術、常關特性、疊接結構、三維整合、非晶系銦鎵鋅氧薄膜電晶體、GaN MISHEMTs、SiON dielectric/AlON dielectric、QST、High breakdown voltage power device、Cascode configuration、3D Integration、a-IGZO TFTs

Machine Learning Based Characteristic Modeling and Prediction in 4H-SiC and GaN Power Device and Investigation of 4H-SiC Power Device Reliability

國際半導體產業學院

碳化矽金氧半場效電晶體及電容、氮化鎵高電子遷移率電晶體、TCAD模擬、機器學習、全連接類神經網路、卷積類神經網路、U-Net、介面能態缺陷密度、依時性介電層崩潰、正電壓應力所致不穩定性、臨界電壓偏移、雙脈衝動態量測、開關損耗、被動式閘極驅動電路、SiC MOSCAPs、SiC MOSFETs、GaN HEMTs、Sentaurus TCAD、Machine Learning、Fully Connected Neural Network、Convolutional Neural Network、Interfacial Trap Characterization、Time Dependent Dielectric Breakdown、Positive Bias Temperature Instability、Vth Shift、Double Pulse Test、Switching Loss、External CGS、Passive Gate Driver

Investigations of the performances and reliability of wide-bandgap semiconductor (GaN and Ga2O3) power devices for highly efficient power electronic applications

國際半導體產業學院

GaN、β-Ga2O3、伽瑪輻射、低溫、變溫特性、TCAD 模擬、可靠度、gamma irradiation、cryogenic temperature、temperature-dependent performance、TCAD simulation、reliability

Performance and Reliability Study of FeFET and RRAM Toward Neuromorphic Applications

前瞻半導體研究所

鐵電、電阻式記憶體、記憶體內運算、可靠度、類神經網路、Ferroelectric、Resistive RAM、Compute-in-memory、Reliability、Neuromorphic

Investigate the Characteristics and Reliability of High-Power p-Type Gallium Nitride High Electron Mobility Transistors with Different Magnesium Concentration Doping in p-GaN Layer, AlN Etching Stop Layer, and Different Dopants in Buffer Layer

國際半導體產業學院

氮化鎵、功率元件、p型氮化鎵高功率高電子遷移率電晶體、鎂濃度參雜、氮化鋁蝕刻終止層、元素參雜於緩衝層、Gallium nitride、Power device、p-GaN gate HEMTs、Mg doping concentration、AlN etching stop layer、Buffer doping

Performance and Reliability Analysis in Sub-micron RF AlGaN/GaN High Electron Mobility Transistors with Different Gate Processes

國際半導體產業學院

氮化鎵射頻金屬-絕緣體-半導體高電子遷移率電晶體、氮化矽、氮氧化矽、截止頻率、最大震盪頻率、表面缺陷密度、T型閘極、GaN RF MIS-HEMT、in-situ SiN、SiON、Cut-off frequency、Maximum oscillation frequency、Interface traps density、T-gate

Toward Understanding Gate Related Reliability under dVG/dt, positive bias stress, forward gate breakdown, and reverse conduction in Power p-GaN HEMTs

國際半導體產業學院

p型氮化鎵高電子遷移率電晶體、快速開關狀態、正偏壓溫度不穩定 性、正向閘極崩潰、反向導通、臨界電壓偏移、p-GaN gate HEMTs、dVG/dt、positive bias stress、forward gate breakdown、reverse conduction、Vth instability

Effects of Key Processes on the Characteristics and Reliability of Ferroelectric Devices: Aluminum Oxide Insertion Layer, In-situ Atomic Layer Deposition System, Nanolaminates Structure, and Various Dopant Elements

國際半導體產業學院

鐵電、介電層插入層、原位原子層沉積系統、奈米積層板、鉿氧化物、時間相關介電層崩潰、循環崩潰、Ferroelectric、dielectric insertion layer、in-situ atomic layer deposition system、nanolaminates、HfO2-based material、Endurance、time-dependent-dielectric-breakdown、cycle-to-breakdown

Reliability Evaluation Circuits for GaN HEMTs Devices in Power Electronics Application

國際半導體產業學院・共同指導：薩曼塔蘇文杜

氮化鎵、動態通態電阻、臨界電壓不穩定、可靠度、測試電路、GaN、dynamic Rds、on、Vth instability、reliability、testing circuit

ML/DL-based Signal Integrity Optimization for InFO Any-angle Routing

國際半導體產業學院・共同指導：陳宏明

訊號完整性、CatBoost、深度神經網路、第三代高頻寬記憶體、InFO 任意角度繞線、Signal Integrity、DNN、HBM3、InFO Any-angle Routing

The Study of Critical AlGaN/ GaN-based Components for Monolithic Integrated Circuit Applications

國際半導體產業學院

p型氮化鎵功率電晶體、電阻電晶體邏輯逆變器、肖特基勢壘二極體、集成肖特基勢壘二極體、氮化鎵積體電路、正偏壓溫度不穩定性、閾值電壓偏移、動態導通電阻、p-GaN gate HEMTs、Resistor Transistor Logic Inverter、Schottky Barrier Diodes、Integrated Schottky Barrier Diodes、Monolithic GaN IC、Positive bias temperature instability、Fast switch Dynamic RON、VTH shift

Toward Understanding Impact of Traps and the Time-Dependent Instability in p-GaN HEMT Using TCAD Simulation

國際半導體產業學院

p型氮化鎵高電子遷移率電晶體、TCAD模擬、正偏壓溫度不穩定性、負偏壓溫度不穩定性、元件關閉下的高電壓測試、臨界電壓偏移、p-GaN gate HEMTs、Sentaurus TCAD、positive bias temperature instability、negative bias temperature instability、off-state stress、VTH shift

Investigation of Different Processing Conditions and Various Compositions of Ferroelectric-layer in HfO2-based MOSCAPs

國際半導體產業學院

鐵電、晶種層、奈米積層板、鉿氧化物、時間相關介電層崩潰、循環崩潰、Ferroelectric、seeding layer、nanolaminates、HfO2-based material、Endurance、time-dependent-dielectric-breakdown、cycle-to-breakdown

Reliability of p-GaN Power HEMTs under device-level stresses and operations

國際半導體產業學院

p型氮化鎵功率元件、p型氮化鎵高電子遷移率電晶體、再成長p型氮化鎵閘極高電子遷移率電晶體、臨界電壓穩定性、變頻之電容−電壓、熱電子發射模型、缺陷輔助穿隧模型、正向偏壓溫度不穩定性、反向偏壓溫度不穩定性、高速掃描、第三象限可靠度、伽瑪射線、無線電力傳輸、p-GaN power device、p-GaN HEMT、regrown p-GaN gate HEMT、VTH stability、frequency-dependent C−V、thermionic emission、trap-assisted tunneling、PBTI、NBTI、fast sweeping、3rd quadrant reliability、𝛄-ray、wireless power transfer

Study of Performance and Reliability in GaN on Si Power Devices: Impacts of Oxygen Plasma in p-GaN HEMTs and Trench Processes in Schottky Barrier Diode

國際半導體產業學院

氮化鎵、功率元件、p型氮化鎵高功率高電子遷移率電晶體、氧電漿處理、肖特基能障二極體、溝槽結構、GaN、Power device、p-GaN HEMTs、Oxygen plasma treatment、Schottky barrier diode、trench、ion implantation

Development of the Critical Blocks For 3D Integration in GaN Power Devices

國際半導體產業學院

氮化鎵的金屬-絕緣體-半導體高電子遷移率電晶體、氮氧化矽、場板、常關特性、疊接結構、三維整合、薄膜電晶體、非晶系銦鎵鋅氧薄膜電晶體、GaN MIS-HEMT、SiON、field-plate、normally-off characteristics、cascode configuration、3D Integration、a-IGZO TFT

Development and Analysis of Enhancement-mode p-GaN HEMTs using Oxygen Plasma Treatment in the Access Region

國際半導體產業學院

氮化鎵、功率元件、p型氮化鎵高電子遷移率電晶體、氧電漿表面處理、深蝕刻、GaN、Power Device、p-GaN HEMT、Oxygen plasma surface treatment、Deep etching

Investigation of Fabrication Processes and Electrical Operations on Ferroelectricity and Reliability in HfO2-based Thin Film MOSCAPs

國際半導體產業學院

鐵電電容、鉿氧化物、介面處裡、應力工程、可靠度、Ferroelectric Capacitors、Hafnium Oxide-based Material、Interface Treatment、Strain Engineering、Cycling Characteristic、Reliability

Evaluation of GaN-Based Power devices for Harsh Environments

國際半導體產業學院

氮化鎵的高電子遷移率電晶體、氮化鎵的金屬-絕緣體-半導體高電子遷移率電晶體、氮化鎵肖特基能障二極體、p型氮化鎵的閘極金屬-絕緣體-半導體高電子遷移率電晶體、伽瑪輻射、質子輻射、低溫、GaN HEMTs、GaN MIS-HEMTs、GaN SBD、p-GaN gate HEMT、Gamma radiation、Proton radiation、Cryogenic Temperature

Study of GaN-based Semiconductor for White-and-infrared Light Emitting Matrix and Application to Automotive Headlamp

國際半導體產業學院・共同指導：簡昭欣

氮化鎵、發光二極體、車頭燈、多晶片陣列、紅外光螢光粉、GaN、LED、Headlamp、LED matrix、Infrared phosphor

Study of Gate Related Reliability in Power p-­GaN HEMTs

國際半導體產業學院

p型氮化鎵高電子遷移率電晶體、時間相依閘極崩潰、熱電子發射模型、普爾 - 法蘭克發射模型、正偏壓溫度不穩定性、閾值電壓偏移、p-GaN gate HEMTs、time dependent gate breakdown、thermionic emission model、Poole-Frenkel emission model、positive bias temperature instability、VTH shift

Critical Process Development and Characteristics Analysis of Power and RF AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

國際半導體產業學院

氮化鎵、氮氧化矽、高電子遷移率電晶體、高功率元件、高頻元件、高崩潰電壓、二維電子氣、GaN、SiON、HEMT、power devices、high frequency devices、high breakdown voltage、two-dimensional electron gas

Reliability Evaluation of AlGaN/GaN Based Devices for Power Applications Towards Technology Qualification

國際半導體產業學院

氮化鎵、高功率元件、氮化鋁鎵/氮化鎵高電子遷移率電晶體、肖特基閘極高電子遷移率電晶體、金氧半-高電子移動率電晶體、p型氮化鎵高電子遷移率電晶體、肖特基二極體、氮化鎵單片積體電路、GaN、Power Device、AlGaN/GaN HEMT、Schottky Gate HEMT、MISHEMT、p-GaN Gate HEMT、Schottky Barrier Diode、GaN Monolithic Integration

A Study on the Influence of NO Annealing and Isolation Process on the Time-Dependent-Dielectric-Breakdown of Gate Oxide on 4H-SiC

國際半導體產業學院・共同指導：崔秉鉞

碳化矽、時依介電層崩潰、閘極氧化層、一氧化氮退火、局部氧化、4H-SiC、TDDB、gate oxide、NO anneal、LOCOSiC

Simulation and Design Optimization of Metal-Ferroelectric-Metal FETs

國際半導體產業學院・共同指導：侯拓宏

非揮發式記憶體、鐵電記憶體、可靠度、鐵電模型、Non-Volatile Memory、Ferroelectric Memory、Reliability、Ferroelectric Model

Reliability Analysis in GaN-on-Si MIS-HEMTs and Schottky HEMTs

國際半導體產業學院

可靠度、氮化鎵、加壓量測、高電子遷移率場效電晶體、Reliability、Gallium Nitride、BTI stress、HEMT

Simulation Study of GaN-on-Si Power Devices and Semi-ON/OFF-State Reliability in Power Metal- Insulator-Semiconductor High Electron Mobility Transistors

國際半導體產業學院

氮化鎵、功率元件、半導體、三五族化合物、陷阱、Gallium Nitride、GaN、HEMT、Power semiconductor

Passivation Induced VTH Instability in p-GaN HEMTs and Critical Process Development in Semi-Vertical GaN Power MOSFET/Schottky Barrier Diode

國際半導體產業學院

氮化鎵、準垂直式、功率元件、金屬氧化物半導體場效電晶體、p型氮化鎵、高電子遷移率場效電晶體、GaN、Semi-Vertical、power device、MOSFET、p-GaN、HEMT

Artificial Neural Network-Based Approach for Characteristics Modeling and Optimization:A Demonstration for GaN-on-Si Power Devices

國際半導體產業學院

利用人工神、板氮化鎵功率元件的、Artificial Neural Network、MIS-HEMT、pGaN、Device Modeling

Investigation of the characteristics in scaling ferroelectric HfZrO2 MOSCAPs and Ferroelectric FETs with area and bias dependencies

國際半導體產業學院

鐵電體、極化、場效應晶體管、MOSCAPs、縮小比例、漏電流、Ferroelectric、Polarization、Field effect transistor、down scaling、leakage current

Analyses of Ferroelectricity in Al-doped HfO2 and Reliability in Zr-doped HfO2 Technologies

國際半導體產業學院

二氧化鉿、鐵電材料、可靠度分析、HfO2、ferroelectric material、reliability

Critical process development in Lateral Trench Power Diodes / MOSFETs and p-GaN gate power HEMTs

國際半導體產業學院

功率元件、溝槽式金氧化場效電晶體/二極體、氮化鎵、Power Device、Trench MOSFET、GaN

Impact of the critical process in reliability of Zr-doped ferroelectric based memory and negative capacitance field effect transistors

國際半導體產業學院

鋯鉿氧化物、鐵電材料、負電容、介面處理、HfZrO2、Ferroelectric、negative capacitance、surface treatment