陳俊豪

Study on Ultrasonic Bonding of Heavy Copper Wires and Ribbons on Nanotwinned-Copper-Metallized SiC Chips for Power Module Packaging

國際半導體人才教育專班

粗銅線、銅帶、奈米孿晶銅、功率模組封裝、超音波接合、溫度循環測試、heavy Cu wire、Cu ribbon、nanotwin Cu、power module packaging、ultrasonic bonding、temperature cycling test

Development of a System-on-Chip-Based Active Power Cycling Platform for Power Device Reliability Assessment

國際半導體產業學院

主動式功率循環、系統單晶片、元件永久性損傷、GaN HEMT可靠度、Isat退化、Active Power Cycling、SoC、Permanent Device Damage、GaN HEMT Reliability、Isat Degradation

Study on Electro-Thermal Characteristics and Reliability of GaN HEMTs using Power Cycling Test

國際半導體產業學院

氮化鎵高電子遷移率電晶體、背閘極效應、結構函數、熱阻、功率循環測試、失效分析、GaN HEMTs、Back-gate Effect、Structure Function、Thermal Resistance、Power Cycling Test、Failure Analysis

Enhancement of dielectric constant in Ferroelectric HZO by Increasing Zr Ratio to Approach Morphotropic Phase Boundary with Interfacial Stacking of TiO2 and Al2O3

國際半導體產業學院・共同指導：吳添立

鉿鋯氧化物、介電常數提升、同型相界、界面工程、二氧化鈦、氧化鋁、鐵電電容器、Hafnium-Zirconium Oxide、Enhancement of Dielectric Constant、Morphotropic Phase Boundary、Interfacial Engineering、Titanium Oxide、Aluminium Oxide、Ferroelectric Capacitor

Study on Nanotwin-Enhanced Cu-Foil Sintering for Top-Side Inter-connection in Si/SiC Power Electronic Packaging

國際半導體產業學院

奈米雙晶銀、Si/SiC 功率封裝、銅箔、銀燒結、頂部互連、nanotwinned Ag、Si/SiC packaging、Cu foil、Silver sintering、Top-Side-Interconnections.

Nanotwin-Enabled SiC Power Module Interconnects: Backside Ag Preform Die Attach and Frontside Heavy Cu Wire Bonding

國際半導體產業學院

碳化矽功率模組、銀預成型片燒結、奈米孿晶銀、重銅線打線、奈米孿晶銅、互連可靠度、SiC power module、silver preform sintering、nanotwinned Ag、heavy copper wire bonding、nanotwinned Cu、interconnect reliability

Study on the Development of a Power Cycling Test Platform for Reliability Evaluation of Power Modules

國際半導體產業學院

主動功率循環、功率 MOSFET、功率電子封裝、閾值電壓漂移、動態導通電阻、可靠度測試、導通電壓、接面溫度擺幅、Active Power Cycling、Power MOSFET、Power Electronic Packaging、Threshold Voltage Shift、Dynamic On-Resistance、Reliability Testing、On-state Voltage、Junction Temperature Swing

Study on the Development of a Power Cycling Test Bench and Reliability Test for GaN Power Devices

國際半導體產業學院

主動式功率循環、閾值電壓漂移、動態導通阻抗、可靠度試驗、多儀器整合、Active Power Cycling、E-mode Cascode GaN、Threshold Voltage Shift、Dynamic On-Resistance、Reliability Testing、Python-GUI、Multi-Instrument Integration

Study on Nanotwinned Silver Metallization for Heterogeneous Bonding of Cu Clip Interconnects and Cu–Stainless Steel Baseplate Interfaces in Power Modules

國際半導體越南境外專班

銅片鍵合、異質接合、低溫接合、奈米雙晶、功率封裝、Clip bonding、Heterogeneous bonding、Nanotwin silver、Power electronic packaging

Investigation of HfNx/Al2O3-Based Conductive Bridge Random-Access Memory Devices

國際半導體越南境外專班

電阻式隨機存取記憶體元件、氧化鋁、氧氮化鉿介電層、緩衝層、resistive random-access memory (RRAM)、aluminum oxide (Al2O3)、hafnium nitride (HfNx)、buffer layer

The Reliability Study of GaN MIS-HEMTs using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

國際半導體產業學院・共同指導：鍾錦翰

鐵電體、氮化鎵金屬絕緣體半導體高電子遷移率電晶體（GaN MIS-HEMT）、初始化過程、正偏壓溫度不穩定性、可靠性、輻射效應、Ferroelectrics、initialization process、positive bias temperature instability、reliability、radiation effect