侯拓宏

Simulation Platform for Real-Time Multi-Gas Sensing Using IGZO TFT Sensor Arrays

智慧醫電工程研究所・共同指導：陳榮治

非晶氧化銦鎵鋅、薄膜電晶體、氣體感測、二氧化氮、相對濕度、TCAD、儲備池計算、amorphous indium gallium zinc oxide (a-IGZO)、thin-film transistor、gas sensing、nitrogen dioxide、relative humidity、Reservoir Computing

Experimental Investigation and Micromagnetic Analysis of Stochastic Response in Mo-Inserted Ta-CFL SP-MTJs

前瞻半導體研究所・共同指導：賴朝松、魏拯華

超順磁磁性穿隧結、微磁學模擬、熱擾動、交換剛性、元件尺寸、機率運算、Superparamagnetic magnetic tunnel junction、micromagnetic simulation、thermal fluctuation、exchange stiffness、device size、probabilistic computing

Thermally Robust P-Type TeOx Transistors via Selenium Annealing and Bilayer Contact Metal Optimization

前瞻半導體研究所

p型氧化物半導體、高熱耐受性與穩定性、硒化退火、高介電常數 夾層結構、雙層接觸金屬優化、P-type oxide semiconductor、High thermal robustness and Stability、Selenization annealing、High K sandwich structure、Bilayer contact metals optimization

Hardware-Dataflow Co-optimization: A Comparative Study between Digital Computing-in-Memory and Digital Processing Element

電子研究所

邊緣運算、數位記憶體內運算、Roofline 模型、資料流分析、硬體加速器、Edge Computing、Digital Compute-in-Memory (DCIM)、Roofline Model、Dataflow Analysis、Hardware Accelerator

Hardware-friendly Reservoir Computing for Real-Time Gas Concentration Detection

國際半導體產業學院・共同指導：林群雄

RRAM 氣體感測器、精簡物理模型、儲備池運算、硬體友善演算法、感測器內運算、RRAM Gas Sensor、Compact Mode、Reservoir Computing、Hardware-Friendly Algorithm、In-Sensor Computing

New Opportunities for MRAM in Memory-Centric Hybrid Computing Paradigms

電子研究所

磁阻式記憶體、超順磁穿遂結、量子運算、仿生運算、記憶體內運算、機率運算、組合最佳化、MRAM、SP-MTJ、Quantum Computing、Neuromorphic Computing、In-Memory Computing、Probabilistic Computing、Combinatorial Optimization

Scalable Fabrication of Functional Indium Selenides (In2Se3 & InSe) and Amorphous Boron Nitride by Magnetron Sputtering

電子研究所

磁控濺鍍、銦硒化物(In2Se3、InSe)、鐵電半導體、二維固相結晶(2DSPC)、非晶氮化硼(aBN)、aBN-SiOx 複合物、低介電係數(low-k)層間介電層(ILD)、Magnetron sputtering、Indium selenide (In2Se3、Ferroelectric semiconductor、Two-dimensional solid phase crystallization (2DSPC)、Amorphous boron nitride (aBN)、aBN-SiOx composite、Low-k Interlayer dielectric (ILD)

Role of Different Interfaces in Ultra-thin HfO₂-ZrO₂ Ferroelectric Superlattice Structure

前瞻半導體研究所・共同指導：孫元成

鐵電超晶格架構、降低熱預算、厚度微縮、介面軟崩潰模型、工作週期波型、ferroelectric superlattice structure、reduced thermal budget、thickness scaling、IL-SBD model、duty-cycle scheme

Junction Variation-Induced Erase Performance Variability and Optimization in CUA-type 3D NAND Memory

電子研究所

三維CUA NAND、閘極引發汲極漏電流抹除、帶對帶穿隧、接面變異、科技電腦輔助設計模擬、抹除效率、高界問題、CUA-type 3D NAND、GIDL erase、Band-to-Band tunneling (BTBT)、Junction variation、TCAD simulation、Erase efficiency、High-bound (HB) issue

Suppression of Intracell Read Disturbance and Fine-Weight In-Memory Computing in High-Density 2TnC-MFMFET

電子研究所

先進鐵電記憶體、超高密度、雙電晶體多重鐵電電容堆疊場效電晶體、單元內讀取擾動、精細權重、記憶體內運算、空間控制多階儲存、advanced ferroelectric memory、ultra-high-density、2TnC-MFMFET、intracell read disturbance、fine-weigh、in-memory computing、spatial-control multi-level cell (SC-MLC)

Emerging non-volatile memory based device-circuit co-design for neuromorphic computing

國際半導體產業學院・共同指導：馬南.蘇里

仿生運算、脈衝式神經網絡、新興非揮發式記 憶體、電阻式記憶體、神經網絡加速、自旋軌道轉矩磁阻式記憶體、記憶體內運算、Neuromorphic Computing、Spiking Neural Networks、Emerging non-volatile memories、Resistive RAM、Neural Network Acceleration、SOT-MRAM、In-memory Computing

Local Te-Engineering in Selective Growth of MoTe2 via Two-Dimensional Solid-Phase Crystallization

電子研究所

二維材料、過鍍金屬硫化物、二碲化鉬、p型電晶體、晶體成長、覆蓋層調控、缺陷修復、選擇性成長、2D materials、Transition metal dichalcogenide (TMDs)ides (TMDs)、MoTe2、P-type transistors、Crystal growth、Capping engineering、Defect-repairing、Selective growth

Comprehensive Investigation of Readout Current in (Anti)ferroelectric Capacitors for Memory Applications and Formulation of Endurance Fatigue Recovery Strategies

電子研究所・共同指導：李敏鴻

(反)鐵電隨機存取記憶體、(反)鐵電電容、(反)鐵電穿隧式記憶體、極化疲勞、極化恢復、(Anti)-Ferroelectric Random-Access Memory ((A)FeRAM)、(Anti)-Ferroelectric Capacitor ((A)FeCap)、(Anti)-Ferroelectric Tunneling Junction ((A)FTJ)、Fatigue、Recovery

Advancing MoTe2 Top Gate Devices: Process Optimization and N2 Plasma Doping Technology

前瞻半導體研究所

二維材料、過渡金屬二硫化物、電漿處理、原子層沉積、欠交疊閘極場效應電晶體、Two-dimensional materials、Transition metal dichalcogenides、Plasma treatment、Atomic layer deposition、Underlap gate field effect transistors

Monolayer InOx GAAFET with Fully Oxide-Based Gate Stack

電子研究所

氧化銦、原子層沉積、環繞閘極奈米片電晶體、單片3D應用、蝕刻製程開發、氧氣離子後處理、原子層沉積InOx閘極金屬、Indium oxide (InOx)、Atomic layer deposition (ALD)、Gate-all-around (GAA) Nanosheet transistors、Monolithic 3D application、Etching process development、O2 plasma post-treatment、ALD InOx as gate metal

Trap-Dominant Hf0.5Zr0.5O2-Based Ferroelectric Reliability Model: From Wake-Up to Fatigue and Recovery

電子研究所

鐵電記憶體、可靠度問題、喚醒效應、疲勞效應、陷阱輔助穿隧、介面層、數值模擬、ferroelectric memory、Reliability issues、Wake-up effect、Fatigue effect、Trap assisted tunneling (TAT)、Interfacial layer (IL)、numerical modeling

High-Density Unipolar STT-MRAM for Future High-Performance Computing: Device Development and Model Analysis

電子研究所

自旋轉移力矩磁阻式記憶體、單極性磁阻式記憶體、物理不可複製函數、熱穩定性因子、超順磁穿隧結、Spin-Transfer Torque Magnetic Random Access Memory、Unipolar MRAM、Physically Unclonable Functions、Thermal Stability Factor、Superparamagnetic Tunnel Junctions

System Design of Computing-In Memory for Genome Assembly Using Quadratic Unconstrained Binary Optimization

電子研究所

記憶體內運算、模擬分叉演算法、霍普菲爾神經網絡、二次無限制二值最佳化、易辛機器、基因組裝、組合最佳化問題、In-memory Computing、Simulated Bifurcation、Hopfield Neural Networks、Quadratic Unconstrained Binary Optimization、Ising Machine、Genome Assembly、Combinatorial Optimization Problem

Modeling of Traps Induced Reliability Issues toward MFM Capacitors

電子研究所

鐵電記憶體、可靠度問題、電應力導致漏電流、元件崩潰、陷阱輔助穿隧、時依性介電層崩潰模型、數值模擬、FE based material、Reliability issues、SILC、Breakdown、Trap assisted tunneling model、TDDB model、Numerical modeling

AI-Powered Time-Dependent Dielectric Breakdown Prediction: Integrating Bayesian Neural Network and Informer Model

前瞻半導體研究所・共同指導：孫元成

時間依賴性介電層崩潰、深度學習、Informer模型、Transformer模型、貝氏神經網絡、半導體可靠性、時間序列預測、Time-Dependent Dielectric Breakdown (TDDB)、Deep learning、Informer Model、Transformer model、Bayesian Neural Network (BNN)、Semiconductor Reliability、Time-Series Forecasting (TSF)

Optimization and Design of Ultra-Efficient 9T-SRAM In-Memory Computing Architecture

前瞻半導體研究所

記憶體內運算、靜態隨機存取記憶體、能量效率、面積效率、校正電路、computing-in-memory、SRAM、power efficiency、area efficiency、calibration circuit

Dependence of Crystallinity and Ferroelectricity in Ultra-thin Ferroelectric Hf1-xZrxO2 Capacitors

國際半導體產業學院・共同指導：吳添立

鐵電Hf1-xZrxO2 薄膜、鐵電電容、厚度微縮、結晶度、喚醒效應、IL-SBD、ferroelectric Hf1-xZrxO2 film、ferroelectric capacitance、thickness scaling、crystallinity、wake-up effect

Tellurium Palladium Alloyed Contact to Two-dimensional Transition Metal Dichalcogenides FETs

電子研究所

二維過渡金屬硫屬化物、二維材料電晶體、接觸電阻、碲鈀合金接觸、熱穩定性、Two-dimensional transition metal dichalcogenides (2D TMDs)、2D-based FETs、Contact resistance、Te/Pd alloyed contact、Thermal stability

2DSPC NSFET Module: 2H-MoTe2 Selective Growth and Top Gate-Dielectric Interface Optimization

電子研究所

二維過渡金屬硫族化合物、二維材料、選擇性成長、氧化層層之界面、有機殘留物去除、氫氣還原、Two-dimensional transition metal dichalcogenides (2D TMDs)、2D materials、selective growth、oxide interface、organic residues cleaning、hydrogen reduction

Adaptive Stochastic Time Ensemble toward Robust Computing-In-Memory Manufacturability for Edge AI Applications

人工智慧技術與應用碩士學位學程

keyword-spotting、CIFAR-10、Adaptive stochastic time-ensemble、Stochastic time-ensemble、類比記憶體內運算、變異性感知訓練、隨機時序集成、自適應時序集成、關鍵詞檢測、Analog computing-in-memory、Variation-aware training

RRAM-Based Time-Step Adjustable Spiking Neural Network Inference Engine

電子研究所

脈衝神經網路、記憶體內運算、非揮發式記憶體、時間步階調整、推論引擎、Spiking neural network、Computing-in-memory、non-volatile memory、time-step adjustable feature、inference engine

Transformer Model Applications: Efficient In-Memory-Computing Edge and Rapid Prediction of Time-Dependent Dielectric Breakdown

電子研究所

Transformer 模型、自然語言處理、二值化模型、非揮發式電阻式隨機存 取記憶體、記憶體內運算、時間序列預測、時依介電層崩潰、Transformer-based Model、Natural Language Processing、Binarization、RRAM、CIM、Time-series Forecasting、Time-dependent Dielectric Breakdown

Improving Parallelism of RRAM-based In-memory Computing and its Impact on Energy Efficiency, Area Efficiency, and Throughput

電子研究所

電阻式隨機存取記憶、記憶體內運算、新興非揮發記憶體、人工智慧邊 緣裝置、人工智慧加速器、Computing-in-memory (CIM)、multiply-and-accumulate (MAC)、Emerging nonvolatile memories (NVMs)、AI edge device、AI accelerator

MoTe2 Tellurium Vacancy Repairing by MPS Treatment

電子研究所

二維過渡金屬二硫屬化物、二維材料、二碲化鉬、缺陷修復、硫族元素空缺、Two-dimensional transition metal dichalcogenides (2D TMDs)、2D materials、Defect repairing、MoTe2、Chalcogen vacancies

Algorithm Design for Solving Quadratic Unconstrained Binary Optimization with In-Memory Computing Architecture

電子研究所

二次無限制二值最佳化、記憶體內運算、易辛機器、退火處理器、組合式最佳化問題、記憶體內退火單元、Quadratic Unconstrained Binary Optimization、In-memory Computing、Ising Machine、Annealing Processor、Combinatorial Optimization、In-memory Annealing Unit

Thickness Scaling of Ferroelectric Hf1-xZrxO2 Capacitors and Ferroelectric Tunnel Junction

電子研究所

鐵電Hf1-xZrxO2薄膜、鐵電電容、厚度微縮、低操作電壓、喚起效應、鐵電穿隧式記憶體、提高電流密度、ferroelectric Hf1-xZrxO2、ferroelectric capacitor、thickness scaling、low-voltage operation、wake-up effect、ferroelectric tunnel junction、high current density

STT-MRAM Neuron and Synapse: A Pathway toward All-Spin Spiking Neural Network

電子研究所

自旋轉移矩磁阻式記憶體、帕松神經元、積分及發射神經元、脈衝類神經網路、單極切換自旋轉移矩磁阻式記憶體、STT-MRAM、Poisson neuron、I&F neuron、SNN、unipolar STT-MRAM

Stochastic Time Ensemble for Accurate In-Memory Computing Design

電子研究所

記憶體內運算、圖形辨識、隨機神經元、集成、Computing-in-memory、Image recognition、Stochastic neuron、Ensemble

Comprehensive Physical Modeling Framework of Ferroelectric Capacitors and Optimization of Ferroelectric Tunnel Junctions

電子研究所

鐵電電容、鐵電穿隧式記憶體、物理模型、穿隧電流窗口、介面層、極化疲勞、ferroelectric capacitor (FeCap)、ferroelectric tunnel junctions (FTJ)、physical modelling、tunnel electroresistance (TER)、interfacial layer (IL)、fatigue

Two-dimensional Solid Phase Crystallization: Area-selective Growth, Vertical Stacking, and Polarity Control

電子研究所

二維材料、過度金屬硫族化物、二碲化鉬、二維固相結晶法、極性控制、奈 米片堆疊、選擇性成長、2D material、TMDs、MoTe2、2DSPC、polarity control、nanosheet stacking、area-selective growth

An Energy Efficient Inference Processor of Neural Network Based on Resistive-gate FinFET

人工智慧技術與應用碩士學位學程・共同指導：莊紹勳

近記憶體運算、記憶體內運算、電阻式記憶體、電阻式閘極鰭式電晶體、神經網路、人工智慧、終端應用、Near Memory Computing、Computing in Memory (CIM)、Resistive Random-Access Memory (RRAM)、RG-FinFET、Neural Network、Artificial Intelligence、Edge Application

In-Memory Computing with Emerging Non-volatile Memory for Efficient Processing of Deep Neural Networks

電子研究所

人工智慧、深度神經網路、記憶體內運算、非揮發性記憶體、Artificial intelligence、Deep neural networks、In-memory computing、Non-volatile memory

Back-End-of-Line Compatible HfxZr1-xO2 Ferroelectric Capacitors with High Scalability

電子研究所・共同指導：葉伯淳

鐵電電容、HfxZr1-xO2 材料、CMOS 後段製程相容、面積微縮性、厚度微縮性、Ferroelectric capacitors、HfxZr1-xO2 material、CMOS BEOL compatibility、area scalability、thickness scalability

Disorder Optimization of Two-dimensional Transition Metal Dichalcogenides

電子研究所

二維過渡金屬硫屬化物、物理氣相沉積法、固相結晶、缺陷修復、三維單片堆疊、Two-dimensional transition metal dichalcogenides (2D TMDs)、Physical vapor deposition (PVD)、2D Solid-phase crystallization (2DSPC)、Defect repairing、Monolithic 3D integration

Effect of Interface Traps at Metal-Amorphous InGaZnO Contact on High-Voltage Devices and Photodetectors

電子研究所

非晶氧化鎵銦鋅薄膜電晶體、接面缺陷、高壓元件、汲極偏壓瞬態不穩定性、光感應器元件、寬帶檢測、Amorphous In-Ga-Zn-O thin-film transistors、Interface traps、High-voltage devices、Drain bias transient instability、Photodetectors、Broadband detection

Switching Mechanism and Physical Modeling of HfO2/ATO Bilayer RRAM

電子研究所

非阻絲型態電阻式記憶體、數值演算法、記憶電容、高頻衰減、電子親和力、陷阱輔助穿隧、Non-filamentary RRAM、Numerical algorithm、Mem-capacitance、High frequency attenuation、Electron affinity、Trap-assisted-tunneling

Variation-Tolerant Ternary RRAM-based In-memory Computing Macro Design for Object Detection

電子研究所

電阻式隨機存取記憶體、記憶體內運算、物件偵測、Resistive random-access memory、In-memory computing、Object detection

Fatigue Recovery and Integration of Amorphous InGaZnO Channel in Hafnium Zirconium Oxide Ferroelectric Memory

電子研究所

鐵電氧化鉿、鐵電次循環行為、極化疲勞、疲勞恢復、鐵電場效電晶體、非晶氧化物半導體、Ferroelectric hafnium oxide、Ferroelectric subcycling behavior、Polarization fatigue、Fatigue recovery、Ferroelectric field-effect transistor、Amorphous oxide semiconductor

Comparison of Digital and Computing-in-memory Accelerators for Binarized Neural Network

電子研究所

數位架構、記憶體內運算架構、二值神經網路、Digital architecture、CIM architecture、Binarized Neural Network

Threshold Switching Selectors for Spiking Neuron Application: Device Characterization and Modeling

電子研究所

脈衝神經元、閾值開關選擇器、模型開發、Device-based spiking neuron、Threshold switching selector、Modeling

Implementing Hebbian and Anti-Hebbian STDP in MoS2 Photo-synaptic Transistor Using All-optical Scheme

電子研究所

二硫化鉬、光突觸電晶體、全光操作、鐘形光電流、赫布脈衝時序依賴可塑性、反赫布脈衝時序依賴可塑性、MoS2、Photo-synaptic transistor、All-optical operation、Bell-shaped photocurrent、Hebbian STDP、Anti-Hebbian STDP

Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction Memory with High Current Density

電子研究所

鐵電穿隧式記憶體、HfxZr1-xO2材料、記憶體內運算、電流密度、Al2O3介面層、Ferroelectric tunnel junction、HfxZr1-xO2 material、In-memory computing、Current density、Al2O3 interlayer

Exploring ALD Bilayer Non-Filamentary RRAM for Ultra-High Density Crossbar Array Applications

電子研究所・共同指導：劉柏村

電阻式記憶體、交錯式陣列、仿生系統、人工智慧、陣列良率分析、脈衝性神經網路、非阻絲形態電組式記憶體ˇ、RRAM、Crossbar array、Neuromorphic computing、Artificial intelligence、Array yield analysis、Spiking neuron network、Non-filamentary RRAM

Simulation and Design Optimization of Metal-Ferroelectric-Metal FETs

國際半導體產業學院・共同指導：吳添立

非揮發式記憶體、鐵電記憶體、可靠度、鐵電模型、Non-Volatile Memory、Ferroelectric Memory、Reliability、Ferroelectric Model

Algorithm Design for Hardware-based Spiking Neural Network

電子研究所

仿生運算、脈衝神經網路、演算法、Neuromorphic computing、Spiking neural network、Algorithm

Binary RRAM-based In-memory Computing Macro Design with High Linearity

電子研究所・共同指導：蔡嘉明

電阻式記憶體、記憶體內運算、高線性度、RRAM、In-memory Computing、High Linearity

Investigating Resistive Switching Mechanism of Bilayer RRAM Using Impedance Analysis

電子研究所

電阻式記憶體、阻抗分析、可靠度分析及改善、RRAM、Impedance Analysis、Reliability Analysis and Engineering

Rapid Thermal Recrystallization and Defect Modulation of Sputtered MoTe2

電子研究所

二碲化鉬、濺鍍、快速熱退火、固相結晶、MoTe2、Sputter、Rapid thermal annealing、solid phase crystallization

Low-Current Ferroelectric Tunnel Junction Memory for Neuromorphic Computing

電子研究所・共同指導：蔡光隆

鐵電記憶體、鐵電穿隧式記憶體、神經網路運算、Ferroelectric Memory、Ferroelectric Tunnel Junction、FTJ、Neuromorphic Computing、HZO

Compact Modelling of Synaptic and Neuron devices and their application in Hardware Neural Networks

電機資訊國際學程

緊湊建模、硬件神經網絡、神經元、RRAM、STT-MRAM、Verilog-A、Compact modelling、Hardware Neural Network、Neuron

Contact-First Two-Dimensional Transistor and Atomic Layer Etching Engineering

國際半導體產業學院

二維材料、二維電晶體、原子層蝕刻、2D materials、2D transistor、Atomic-layer etching

2D Solid-phase Crystallization of Sputtered Transition Metal Dichalcogenides

電子研究所

濺鍍法、過渡金屬硫屬化物、固相結晶、二維材料、物理氣相沉積、sputter、transition metal dichalcogenides、solid-phase crystallization、two dimensional material、physical vapor deposition

Artificial Optical Synaptic Transistor Based on Two-Dimensional Transition Metal Dichalcogenides

電子研究所

二維材料、過渡金屬硫屬化物、二硒畫鎢、二硫化鉬、突觸元件、光偵測電晶體、光偵測突觸元件、2D Materials、Transition Metal Dichalcogenides、WSe2、MoS2、Synaptic Device、Phototransistor、Optical Synaptic Device

Artificial Neural Network and Resistive Random Access Memory for Handwritten Digit Recognition

電子研究所・共同指導：蔡嘉明

類神經網路、電阻式記憶體、Artificial Neural Network、Resistive Random Access Memory

RRAM Crossbar-based Hybrid Unsupervised and Supervised Spiking Neural Network

國際半導體產業學院

馮‧諾伊曼架構、電阻式記憶體、脈衝神經網路、非監督式學習、監督式學習、卷積神經網路、von-Neumann、RRAM、SNN、unsupervised learning、supervised learning、convolutional neural network

Application-oriented RRAM programming method design toward the era of Artificial Intelligence of Things

電子研究所

電阻式記憶體、非揮發記憶體、類神經網路、人工智慧、物聯網、記憶體寫入方式、元件電路共同設計、RRAM、nonvolatile memory、memory programming、device-circuit codesign、neural network、artificial intelligence、Internet of Things

Low-Voltage pH Sensor Fabricated by Low-Temperature a-IGZO and PEALD HfO2 Sensing Membrane

電子研究所・共同指導：潘同明

氧化鉿、非晶態銦鎵鋅、酸鹼值感測器、酸鹼值感測度、雙閘極、上方閘極、HfO2、a-InGaZnO、Ion-sensitive thin-film transistor (ISTFT)、pH sensitivity、Double-gate (DG)、Top gate (TG)

Extendable Hardware Neural Network Platform for Pattern Recognition

電子研究所・共同指導：蔡嘉明

硬體類神經網路、圖像辨識、電阻式記憶體、突觸元件、大陣列圖像、hardware neural network、pattern recognition、resistive random access memory、synaptic device、large-scale pattern

Development of Ta/TaOx/TiO2/Ti Analog Synapse for 3D Synaptic Network Applications

電子研究所

電阻式記憶體、突觸、三維交錯式記憶體陣列、類神經網路運算、Resistive switching RAM (RRAM)、Synapse、3D cross-point memory array、Neuromorphic computing

Logic-compatible binary resistive-switching memory using atomic layer deposition technique

電子研究所

二元電阻式記憶體、RRAM、ALD、Bilayer、Variability、Binary RRAM、synapse

Study of Band-to-Band Tunneling Transistor Using Ge-MoS2 Heterostructure

電子研究所

二硫化鉬、異質結構、穿隧式電晶體、活化能萃取、氧化層覆蓋、離子閘極、Molybdenum Disulfide、Heterostructure、Tunneling FET、Activation Energy Extraction、Oxide Capping、Ion liquid Gating

Compact Circuit Model of HfO2/TiO2 Bilayer Resistive Synaptic Device

電子研究所

電阻式記憶體、電子突觸、類神經網路、精簡模型、電路模型、RRAM、electronic synapse、neural network、compact model、circuit model

Hardware Implementation and Design Consideration of Two-layer Perceptron using RRAM Synapse

電子研究所

多層倒傳遞神經網路、類比電阻式記憶體、multi-layer back-propagation、analog resistive random access memory

Heterophase Interface of Molybdenum Ditelluride Transistor

電子研究所

異相、接觸介面、第一原理計算、過渡金屬硫屬化物、二碲化鉬、蕭特基能障、穿隧能障、heterophase、contact interface、Vienna Ab-initio Simulation Package、transition metal dichalcogenides、Molybdenum Ditelluride、Schottky barrier、tunnel barrier

Implementing Short-channel High-voltage Transistors Using Low-temperature a-InGaZnO Technology

電子研究所

非晶氧化銦鎵鋅、高壓電晶體、短通道元件、a-InGaZnO、High-voltage Transistors、Short-channel Device

Process Technologies and Characteristics of Diamond-shaped Ge Nanowire Field-effect Transistor and Microwave-annealed Si Tunnel Transistor

電子研究所・共同指導：李耀仁

菱形鍺奈米線、全包覆式鍺與鍺矽奈米線場效應電晶體、等向性/非等向性乾式蝕刻、原子層沉積系統、微波退火製程、穿隧電晶體、diamond-shaped Ge nanowire、gate-all-around nanowire FETs、isotropic/ anisotropic dry etching、in-situ ALD ozone treatment、Microwave anneal、Tunneling FET

High-voltage Transistor and Roll-to-roll Fabrication by Using Low Temperature a-InGaZnO Technology

電子研究所・共同指導：詹益仁

非晶態、氧化銦鎵鋅、高壓電晶體、捲對捲製程、amorphous、InGaZnO、high-voltage transistor、roll-to-roll

Electrode Effect and Device Scaling of ALD Bilayer RRAM

電子研究所

電阻式記憶體、憶阻器、原子層沉積、雙層電阻式記憶體、RRAM、non-filamentary RRAM、Bilayer RRAM、ALD、Ni electrode

Hardware Neural Network Platform Based on Resistive Synaptic Device and its Pattern Recognition Application

電子研究所

電阻式記憶體、電子突觸元件、類神經網路硬體、硬體平台、圖型識別、電阻式突觸、RRAM、Synaptic device、Hardware neural network、Hardware Platform、Pattern recognition、Resistive Synaptic Device

Improving Contact Resistance of Molybdenum Disulfide Transistor

電子研究所

二硫化鉬、接觸阻抗、電漿處理、覆蓋層、源/汲極金屬接觸、MoS2、Contact resistance、Plasma treatment、Capping layer、S/D metal contact

Implementation of Hardware Neural Network System Based on Analog Resistive Artificial Synapse

電子研究所

硬體神經網路系統、電阻式記憶體、仿生神經突觸、Hardware Neural Network System、Resistive-switching Random Access Memory、Artificial Synapse

TaOx/TiO2 Bilayer Resistive-switching Random Access Memory for Flexible Array and 3D Vertical Structure Applications

電子工程學系 電子研究所

電阻式記憶體、可撓式記憶體、三維垂直結構、RRAM、flexible、3D structure

Non-linear Resistive-switching Memory for 3D Ultra-high Density Storage-class Memory Applications

電子工程學系 電子研究所

電阻式記憶體、儲存級記憶體、三維結構、RRAM、Storage-class memory (SCM)、3D structure

Demonstrating Low-temperature a-InGaZnO Thin Film Transistors for High-Voltage Power Devices

電子工程學系 電子研究所

氧化銦鎵鋅、可靠度、正偏壓測量、IGZO、reliability、positive bias stress

Numerical Modeling of Filamentary and Non-filamentary RRAM

電子工程學系 電子研究所

電阻式記憶體、阻絲、非阻絲、蒙地卡羅、電子 捕捉/釋放、數值模擬、RRAM、Filamentary、Non-filamentary、KMC、Electron Trapping/detrapping、Numerical model

Transition Metal Dichalcogenides Thin Film Transistor: Grain Size and Doping Effects

電子工程學系 電子研究所

過渡金屬硫屬化物、薄膜電晶體、二次諧振波、薄膜轉移過程、Transition Metal Dichalcogenides、Thin Film Transistor、Second Harmonic Generation、Transfer Process

Numerical simulation of RRAM and electronic synaptic device

電子工程學系 電子研究所

電阻式記憶體、電子突觸、數值模擬、RRAM、electronic synapse、numerical simulation

Demonstrating Low-temperature All-oxide Integrated Circuit by Using a-InGaZnO Thin Film Transistors

電子工程學系 電子研究所

全氧化物積體電路、系統整合面板、系統整合晶片、非晶氧化銦鎵鋅、氧化物薄膜電晶體、反相器、記憶體、all-oxide IC、system-on-panel、system-on-chip、a-InGaZnO、OxTFT、inverter、memory

RRAM-Based Electronic Synaptic Device and Compact Model

電子工程學系 電子研究所

電阻式記憶體、突觸元件、憶阻器簡易模型、RRAM、synaptic device、memristor compact model

Ta/TaOx/TiO2/Ti Bilayer RRAM for Applications of Crossbar Array and Flexible Electronics

電子工程學系 電子研究所

電阻式記憶體、RRAM

Study of Tungsten-Diselenide Thin Film Transistor

電子工程學系 電子研究所

二硒化鎢、二維材料、薄膜電晶體、WSe2、2D material、TFT

Study of RRAM reliability and switching mechanism using time-dependent dielectric breakdown methods

電子工程學系 電子研究所

電阻式記憶體、可靠度、時依性氧化層崩潰、RRAM、reliability、time-dependent dielectric breakdown

Array-Level Analysis on Crossbar Resistive-Switching Random Access Memory for High-Density Data Storage

電子工程學系 電子研究所

電阻式記憶體、RRAM

Study on Nonvolatile HfO2 Resistive Switching Memory

電子工程學系 電子研究所・共同指導：雷添福

二氧化鉿、電阻式記憶體、電極效應、鎳燈絲切換模型、燈絲形態發展模型、HfO2、Resistive-switching Random Access Memory、Electrode Effect、Ni filamet RS model、Filament Morphology Evolution Model

Current Conduction Mechanisms of TiO2-based Bipolar Nonlinear Selection Device

電子工程學系 電子研究所

選擇器、二氧化鈦、電流傳導、selection、TiO2、current conduction

Development of Three-Dimensional Vertical Resistive-Switching Random Access Memory

電子工程學系 電子研究所

電阻式記憶體、二氧化鉿、非晶矽、RRAM、HfO2、a-Si

Cross-point Resistive Switching Memory for High-density Data Storage and Flexible Electronics

電子工程學系 電子研究所・共同指導：雷添福

電阻式記憶體、交錯型記憶體陣列、二氧化鈦、二氧化鉿、潛行電流、軟性電子、一二極體-一電阻式記憶體、一選擇器-一電阻式記憶體、非線性程度、讀取窗口、RRAM、Crossbar memory array、TiO2、HfO2、Ssneak current、Flexible electronics、1D1R、1S1R、Nonlinearity、read margin

Organic Nonvolatile Memory Using C60 as

電子工程學系 電子研究所

浮動閘極、C60、有機分子、非揮發性記憶體、floating gate、organic molecule、nonvolatile memory

Numerical RRAM Simulation Based on Joule Heating Effect and Percolation Theory

電子工程學系 電子研究所

電阻式記憶體、數值模擬、焦耳熱效應、滲透理論、RRAM、Numerical Simulation、Joule Heating Effect、Percolation Theory

High-density one selector-one resistor crossbar memory on flexible substrates

電子工程學系 電子研究所

電阻式記憶體、交錯式陣列、可撓式基板、選擇器、RRAM、crossbar array、flexible substrate、selection device、1S-1R

Hybrid Logic/Resistive-switching Poly-Si Thin

電子工程學系 電子研究所

電阻式記憶體、薄膜電晶體、混合式元件、RRAM、thin film transistor、hybrid device

ZnO:Al TFT Fabricated on Si and Flexible Substrates at Room Temperature

電子工程學系 電子研究所

薄膜電晶體、含鋁摻雜之氧化鋅、直流濺渡系統、塑膠基板、Thin film transistor、ZnO:Al、DC sputtering、flexible substrate