林群雄

Fabrication and Evaluation of Ferroelectric Hafnium Zirconium Oxide Gated GaN HEMTs for RF application

國際半導體產業學院

氧化鉿鋯、鐵電高電子遷移率電晶體、記憶窗口、鐵電極化、高頻特性、Hf₀.₅Zr₀.₅O₂ (HZO)、Ferroelectric HEMT (FeHEMT)、Memory window、Ferroelectric polarization、High-frequency characteristics

Electrical Characteristics of Indium Gallium Tin Oxide Channel Thin-Film Transistors under Various Flash Lamp Annealing Conditions

國際半導體產業學院

氧化銦鎵錫、薄膜電晶體、閃光燈退火、缺陷分析、正偏壓穩定性、Indium Gallium Tin Oxide、Thin-Film Transistors、Flash Lamp Annealing、Defect Analysis、Positive Bias Stability

Design, Fabrication, and Reliability Analysis of GaN Based Power Devices and Thin Film Transistors: Investigation of Dual-Gate for Bidirectional Switching

國際半導體產業學院

氮化鋁鎵/氮化鎵金屬絕緣體半導體高電子遷移率電晶體、碳化矽基板、非晶系銦鎵鋅氧薄膜電晶體、雙向開關、QST基板、碲薄膜電晶體、AlGaN/GaN MISHEMT、Qromis Substrate Technology (QST) substrate、Silicon carbide (SiC) substrate、Monolithic bidirectional switch、Tellurium、Thin film transistor

Physics-Based TCAD Investigation of Normally-Off Ferroelectric Charge-Trap Gate GaN MIS-HEMTs

國際半導體產業學院

氮化鋁鎵／氮化鎵、金屬–絕緣層–半導體高電子遷移率電晶體、常關型、電荷捕捉、鐵電、科技電腦輔助設計 (TCAD)、AlGaN/GaN、metal-insulator-semiconductor (MIS-HEMT)、enhancement-mode、charge trapping、ferroelectric、technology computer-aided design (TCAD)

Development of IGTO Thin-Film Transistors for Low Temperature integration and High-Voltage Power Applications

國際半導體人才教育專班

氧化銦鎵錫（IGTO）、薄膜電晶體、原子層沉積（ALD）、低溫整合、正偏壓應力 (PBS)、氧空缺、聚亞醯胺、高壓、比導通電阻、漂移長度崩陷、Indium-Gallium-Tin Oxide (IGTO)、thin-film transistor (TFT)、atomic layer deposition (ALD)、low-temperature integration、positive bias stress (PBS)、oxygen vacancy、polyimide、high-voltage、specific on-resistance、drift length collapse

Reliability Study of RF GaN MIS-HEMTs and Schottky HEMTs: A Comparison under in-situ SiN Passivation Thickness and Channel Length Scaling

國際半導體產業學院

射頻氮化鎵蕭特基高電子遷移率電晶體、金屬-絕緣體-半導體高電子遷移率電晶體、原位氮化矽厚度微縮、通道長度微縮、碰撞游離、RF GaN Schottky HEMT/ MIS-HEMT、scaling in-situ SiN thickness、channel length scaling、impact ionization

Hardware-friendly Reservoir Computing for Real-Time Gas Concentration Detection

國際半導體產業學院・共同指導：侯拓宏

RRAM 氣體感測器、精簡物理模型、儲備池運算、硬體友善演算法、感測器內運算、RRAM Gas Sensor、Compact Mode、Reservoir Computing、Hardware-Friendly Algorithm、In-Sensor Computing

Comparison of In₀.₇₅Ga₀.₂₅As and InAs Channel HEMTs with Varying δ-Doping Profiles for mmWave Applications

國際半導體產業學院

砷化銦鎵、砷化銦、高電子遷移率電晶體、δ-摻雜佈局、高介電常數閘極介電層、原子層沉積、遠端電漿鈍化、毫米波射頻元件性能、InGaAs、InAs、HEMT、δ-doping profile、high-κ gate dielectric、atomic layer deposition、in-situ remote plasma passivation、millimeter-wave RF device performance

Investigation of N-Type IGZO/IGZTO/IGTO and P-Type CuOx Thin-Film Transistors

國際半導體產業學院

薄膜電晶體、n型氧化物半導體、p型氧化物半導體、氧化銦鎵錫半導體、氧化銅半導體、Thin-Film Transistor、N-Type Oxide Semiconductor、P-Type Oxide Semiconductor、Indium Gallium Tin Oxide Semiconductor、Copper Oxide Semiconductor

Investigation of Inserting Interfacial layer in Gate Stack of Indium Zinc Oxide Thin Film Transistors

前瞻半導體研究所

氧化鋅銦薄膜電晶體、原子層沉積、閘極介電層、介面層工程、正偏壓穩定性、Indium Zinc Oxide Thin-Film Transistor、Atomic Layer Deposition、Gate Dielectric、Interface Engineering、Positive Bias Stability

Device Performance Optimization of ALD Grown IGO and IZO Channel Thin Film Transistors with Ozone Treatment

國際半導體產業學院

氧化物半導體、薄膜電晶體、原子層沉積、臭氧退火、缺陷分析、oxide semiconductor、thin-film transistor、atomic layer deposition、ozone annealing、defect analysis

The Application of Sub-Nanometer Rare Earth Oxide (Ce, Sc, La, Y) Interfacial Layer in High-k/Metal Gate Stack

前瞻半導體研究所

稀土氧化物、MIM電容、HKMG電容與電晶體、Rare earth oxide、MIM capacitor、HK/MG capacitor & transistor

Study of Gallium Nitride High Electron Mobility Transistor with ZrO2/HfO2 Superlattice Gate Dielectric

材料科學與工程學系

超晶格氧化鉿鋯、高電子遷移率電晶體、高介電常數材料、鐵電材料、氮化鎵、Superlattice Hafnium Zirconium Oxide、High Electron Mobility Transistor、High-k Dielectric Material、Ferroelectric Material、Gallium Nitride

Study of AlGaN/GaN MIS-HEMT with AlN and AlBN Gate Dielectric and Passivation Layer

國際半導體產業學院

氮化鎵、金絕半高電子遷移率電晶體、氮化鋁硼、閘極介電層、鈍化層、GaN、MIS-HEMT、AlBN、gate dielectric、passivation layer

Development of Robust Ferroelectric Capacitor and Oxide Semiconductor Thin Film Transistors for High-Performance Memory Application

國際半導體產業學院

鐵電材料、非晶氧化物半導體、薄膜電晶體、非晶氧化物鐵電薄膜電晶體、Atomic Layer Deposition、Ferroelectric materials、Oxide Semiconductor、Thin Film Transistors (TFTs)

Modeling & Optimization of Hetero-Integrated Silicon-Based Semiconductor Devices Using TCAD

前瞻半導體研究所

TCAD、元件模擬、矽、砷化銦鎵、核殼鰭式電晶體、IGZO、高壓元件、Technology Computer-Aided Design (TCAD)、Device Simulation、Si、InGaAs、Core-Shell FinFET、High-Voltage Device

Atomic Layer Deposition for the Fabrication of ITZO Channel Thin-Film Transistors with Varying Composition Ratios.

前瞻半導體研究所

半導體元件、原子層沉積(ALD)、非晶氧化物半導體(AOS)、薄膜電晶體(TFT)、ITZO、Semiconductor device、AOS、ALD、TFT

The Application of Laser Annealing Process for Forming Ohmic Contacts to GaN

前瞻半導體研究所

n型氮化鎵、非合金型歐姆接觸、雷射退火、無金歐姆金屬、高濃度矽摻雜氮化鎵、n-GaN、Non-alloyed ohmic contact、Laser anneal、Au-free ohmic metal、High concentration Si doped GaN

Process Development of InAs HEMT for High Frequancy Application

國際半導體產業學院

砷化銦、砷化銦鎵、高電子遷移率電晶體、高頻表現、歐姆接觸、閘極凹槽輪廓、閘極長度縮放、InAs、InGaAs、HEMT、RF performance、Ohmic contact、Gate recess profile、Gate length scaling

Integration of Superlattice Ferroelectric Hafnium Zirconium Oxide and Aluminum Boron Nitride Gate Dielectric with Indium Zinc Oxide Thin Film Transistor

國際半導體產業學院

銦鋅氧化物、鉿鋯氧化物、薄膜電晶體、鐵電、超晶格、氮化硼鋁、非晶氧化物半導體、Indium Zinc Oxide、Hafnium Zirconium Oxide、Thin film transistor、Ferroelectricity、Superlattice、Aluminum Boron Nitride、Amorphous Oxide Semiconductors

Stacked Gate-All-Around Nanosheet Si0.8Ge0.2 PMOS and Si NMOS Field-Effect Transistors

國際半導體產業學院

全環繞式奈米片金氧半場效電晶體、選擇性蝕刻、介面處理、矽鍺P型電晶體、矽N型電晶體、GAA-NS structures、selective etching、interface treatment、SiGe PMOS、Si NMOS

Oxide Semiconductor Thin Film Transistor with InZnOx Channels Prepared by Atomic Layer Deposition

材料科學與工程學系所

原子沉積法、薄膜電晶體、銦鋅氧化物、通道材料、氧化物半導體、Atomic layer deposition、thin film transistor、Indium-Zinc Oxide、Channel Materials、Oxide Semiconductors