簡紋濱

Hybrid PANI/MXene nanocomposite for High-performance Supercapacitors application

國際半導體越南境外專班・共同指導：林宏洲

MXene、聚苯胺、超級電容器、儲能、大規模裝置、複合材料、polyaniline、supercapacitors、energy storage、large-scale device、hybrid composites

Investigating Performance of ReSe₂ Field-Effect Transistor Devices with Gold, Bismuth, and Palladium Contact Electrodes

理學院碩士在職專班-應用科技組

二硒化錸、場效電晶體、半金屬鉍(Bi)、接觸電阻、rhenium diselenide (ReSe₂)、Field-Effect Transistor (FET)、semimetal bismuth (Bi)、contact resistance

Exploring Thermoelectric Properties of SnS₂ Using Thermoelectric Field-Effect Transistor Devices

理學院碩士在職專班-科技與數位學習組

二硫化錫、場效電晶體、熱電效應、席貝克係數、熱電功率因子、二維材料、tin disulfide、field-effect transistor、thermoelectric effect、Seebeck coefficient、thermoelectric power factor、two-dimensional materials

Fabrication of P-type MoS₂ Field-Effect Transistors Using Spray-Coated Palladium Nanoparticular Film and Oxidation Interface Engineering

電子物理學系

電子/電洞傳輸行為、氧化製程、二硫化鉬、奈米顆粒、噴霧塗布法、導電爆炸法、場效電晶體、Electron/Hole Transport Properties、Ozone Process、Molybdenum Disulfide、Nano-Particle、Spray Coating、Wire Electric Explosion Technology、Field-Effect Transistor

Effects of NO Annealing, WOₓ Coverage, and CHCl₃ Treatment on the Hole Transport Characteristics of WSe₂ Field-Effect Transistors

電子物理學系

二硒化鎢、場效電晶體、氮氧退火、氧化鎢、氯仿、p 型摻雜、tungsten diselenide、field-effect transistor、nitric oxide annealing、tungsten oxide、chloroform、p-type doping

Supercapacitor Characteristics of Electro-Exploding and Spray-Coating Prepared Nanoporous MoO₃-NiO Inter- and Mixed Layers

電子物理學系

導線電爆炸、噴霧塗佈、氧化鎳、三氧化鉬、複合薄膜、沉積順序、超級電容器、wire electrical explosion、spray coating、nickel oxide、molybdenum trioxide、composite thin film、deposition sequence、supercapacitor

Electrochromic and Electrochemical Properties of Nanoporous Thin Films Prepared by Mixing of WO₃ and NiO Nanoparticles

電子物理學系

三氧化鎢、氧化鎳、奈米複合薄膜、導線電爆炸技術、噴霧塗佈法、Tungsten trioxide、Nickel oxide、Nanoparticle composite thin films、Electrical explosion of wire、Spray coating method

Estimation of Carrier Effective Mass and Boltzmann Constant Using WSe2 Thermoelectric Field-Effect Transistors

理學院碩士在職專班-應用科技組・共同指導：楊本立

二硒化鎢、熱電場效電晶體、席貝克係數、熱電傳輸、載子有效質量、波茲曼常數、ungsten diselenide (WSe2)、thermoelectric field-effect transistor、Seebeck coefficient、thermoelectric transport、carrier effective mass、Boltzmann constant

Measurement of The Carrier Effective Mass and Estimation of The Boltzmann Constant Using ReSe₂ Thermoelectric Field-Effect Transistors

理學院碩士在職專班-科技與數位學習組

二硒化錸、場效電晶體、熱電特性、席貝克係數、電子有效質量、Rhenium diselenide (ReSe₂)、Field-Effect Transistor、Thermoelectric Properties、Seebeck Coefficient、Carrier Effective Mass、kB/q

Field-Effect Transistor Characteristics of Cr-Doped ReSe2 at Various Cr-Doping Concentrations and Their Application in Inverter Devices

理學院碩士在職專班-應用科技組

二硒化錸、場效電晶體、電荷轉移摻雜、反向器、Rhenium Diselenide (ReSe2)、Field-Effect Transistor (FET)、Chromium Doping、CMOS Inverter

Process Development and Resistive Switching Characteristics of Vertical MoOₓ/MoS₂ Resistive Random Access Memory

電子物理學系

二硫化鉬（MoS₂）、氧化鉬（MoOₓ）、電阻式記憶體、臭氧氧化、雷射局部氧化、垂直式元件、非對稱電極、molybdenum disulfide (MoS₂)、molybdenum oxide (MoOₓ)、resistive random access memory (RRAM)、ozone oxidation、local Laser oxidation、vertical device、asymmetric electrodes

Study of Interfacial Transport Mechanisms, Thermoelectric Properties, and Low-Power Device Applications in Two-Dimensional Transition Metal Dichalcogenide Field-Effect Devices

電子物理學系

二硫化鉬、二硫化鉭、五氧化二鉭、熱電場效電晶體、有效質量、高介電係數、次臨界擺幅、MoS2、TaS2、Ta2O5、Thermoelectric field effect transistor、Effective mass、High-κ、Subthreshold swing

Bismuth metal contact and AlOx covering induced electron doping for raising the performance of n-type WSe₂ field-effect transistors

電子物理學系

二硒化鎢、場效電晶體、半金屬鉍(Bi)、歐姆接觸、表面電荷轉移摻雜、tungsten diselenide (WSe₂)、field-effect transistor、semimetallic bismuth (Bi)、Ohmic contact、surface charge-transfer doping

Integrating Photoresist-enhanced p-type WSe2 and Intrinsic WSe2 Transistors for the Demonstration of an Inverter Operation

電子物理學系

二硒化鎢、六方氮化硼、化學表面摻雜、金屬接觸、介面效應、Tungsten diselenide、Hexagonal boron nitride、Charge transfer doping、Metal contact、Interface effects

Scalable Fabrication of Large-Area Flexible WO3-Prussian Blue Electrochromic Devices via Electro-Exploding Wire and Spray-Coating Technologies

電子物理學系

可撓性電致變色元件、三氧化鎢、普魯士藍、導線電爆炸技術、噴霧塗佈法、Flexible electrochromic device、tungsten trioxide、Prussian Blue、Electro-exploding wire technique、Spray coating method

Feasibility Study of Nitrogen Doping in Electrochromic Metal Oxides Using The Electro-Exploding Wire Technique

電子物理學系

三氧化鎢、氧化鎳、導線電爆炸、電致變色、奈米結構材料、過渡金屬氧化物、氮摻雜、摻雜改質、陰離子摻雜、tungsten trioxide、nickel oxide、wire explosion、electrochromism、nanomaterials、transition metal oxides、nitrogen doping、anion doping

Making Self-Aligned, Vertical Short-Channel, n-Type SnS2 Transistors and p-Type Black Phosphorus Transistors for Demonstrating Inverter Operations

理學院碩士在職專班-應用科技組

二硫化錫、自對準、垂直短通道、場效電晶體、反向器、Tin disulfide、Self-aligned、Vertical Short-Channel、field effect transistor、inverter

Exploring oxidation processing for enhancing hole doping and the performance of WSe2 field-effect transistors.

理學院碩士在職專班-應用科技組・共同指導：楊本立

二硒化鎢、六方氮化硼、場效電晶體、摻雜氧化、tungsten diselenide (WSe₂)、hexagonal boron nitride (h-BN)、field-effect transistor (FET)、oxidation doping.

Generating Nanoscale Crests in MoS2 for Modulating Device Performance and Electron Transport of Field-Effect Transistors

理學院碩士在職專班-應用科技組

二硫化鉬、載子遷移率、應力應變、奈米粒子、拉曼光譜、MoS2、carrier mobility、Stress–strain、nano particle、Raman spectroscopy

Exploring Effects of Hole Doping and Electron Transport in WSe2 Field-Effect Transistors Covered with Negative Photoresist

理學院碩士在職專班-應用科技組

二硒化鎢、場效電晶體、負光阻、p 型摻雜、二維材料、界面修飾、Tungsten diselenide、Field-effect transistor、Negative photoresist、P-type doping、Two-dimensional materials、Interface engineering

Exploring Channel Length Effects of MoS₂ Field-Effect Transistors With Metal Contact of Semimetal Bismuth

電子物理學系

二硫化鉬、場效電晶體、電子束微影、短通道元件、鉍的金屬接觸、molybdenum disulfide、field-effect transistors、electron beam lithography、short channel devices、metal contact of bismuth

Electro-Exploding Generated Cu Mixed with NiO Nanoparticles for Improving Supercapacitive Performance of NiO Nanoporous Films

電子物理學系

超級電容器、氧化鎳、銅摻雜、導線電爆炸、奈米薄膜、噴霧塗佈製程、環保製程、Supercapacitor、Nickel Oxide、Copper Doping、Wire Explosion、Nanostructured Thin Film、Spray Coating Process、Green Fabrication

Investigation of Device Performance of Dual-Gate SnSSe Field-Effect Transistors with Dielectrics of SiO2 and h-BN

理學院碩士在職專班-應用科技組

硫硒化錫、場效電晶體、介電層、二氧化矽、雙閘極結構、Tin sulfoselenide、Field-Effect Transistor、Dialectic layer、silicon dioxide

Exploring The Effect on Device Performance of 2D MoS₂ Field-Effect Transistors Due to Gamma Irradiation

電子物理學系

二維材料、二硫化鉬、場效電晶體、背閘極、伽瑪輻射、γ射線、two-dimensional material、molybdenum disulfide (MoS₂)、field-effect transistor (FET)、back-gate、gamma radiation、γ -ray

Exploring Device Performance of Two-Dimensional SnSSe Field-Effect Transistors with Different Dielectric Materials

理學院碩士在職專班-應用科技組

硫硒化錫、場效電晶體、介電層、氮化硼、氮化矽、二氧化矽、Tin sulfoselenide、field-effect transistor、dielectric layer、hexagonal boron nitride、silicon nitride、silicon dioxide

Fabricating Complementary Field-Effect Transistors and Inverters Using Intrinsic WSe2 and Laser-Assisted Oxidation-Doped WSe2

電子物理學系

二硒化鎢、六方氮化硼、場效電晶體、介面效應、雷射氧化、tungsten diselenide、boron nitride、field-effect transistor、interface effect、laser-assisted oxidation

Exploring Device Performance of MoS2 Field-Effect Transistors Using The Two-Dimensional SnSe2 as a Contact Electrode

理學院碩士在職專班-應用科技組

二硫化鉬、二硒化錫、場效電晶體、接觸電阻、載子遷移率、異質結構、二維材料、金屬硫屬化物、molybdenum disulfide、tantalum disulfide、field-effect transistor、contact resistance、enhanced carrier mobility、TMD

Exploring Electrostatic Doping on WSe2 Complementary Field-Effect Transistors and Inverter

前瞻半導體研究所

靜電摻雜、次臨界擺幅、載子遷移率、二硒化鎢、氮化硼、反向器、互補式場效電晶體、electrostatic doping、subthreshold swing value、carrier mobility、tungsten diselenide、boron nitride、inverter、CFET

Electron Transport and Thermoelectric Properties of Few-Layer SnS Transistors

理學院碩士在職專班-應用科技組

硫化錫、熱電效應、席貝克係數、熱電功率因子、SnS、Thermoelectric Effect、Seebeck Coefficient、Thermoelectric Power Factor

Exploring Schottky Barriers and Electron Transport of SnS2 Field-Effect Transistors Using Au or Bi/Au as Contact Metals

理學院碩士在職專班-應用科技組

二硫化錫、場效電晶體、蕭特基位障、接觸電阻、次臨界擺幅、載子遷移率、tin disulfide、field-effect transistor、Schottky barrier、contact resistance、subthreshold swing、carrier mobility

Photosensitive Material and Oxygen Adsorption on Surface of PdSe₂ to Achieve p-Type Doping for Making Low-Power Complementary Field Effect Transistor

電子物理學系

二維材料、二維過渡金屬硫屬化合物、互補式場效應電晶體、二硒化鈀、化學摻雜、氧吸附摻雜、Two-dimensional material、Two-dimensional transition metal chalcogenide、Complementary field effect transistors、Palladium diselenide、Chemical doping、Oxygen adsorption doping

Fabrication of solid-state, flexible complementary electrochromic devices using electro-exploding and spray-coating technologies

電子物理學系

可撓互補式電致變色元件、大尺寸元件、紫外光固化電解質、導線電爆炸法、噴塗法、低汙染綠色製程、Flexible complementary ECDs、Large-scale devices、UV-curable electrolyte、Electro-exploding technologies、Spray-coating technologies、Eco-friendly process

Electrochromic and Supercapacitive Properties of WO3/MoO3 Nanocomposite Thin Film

電子物理學系

三氧化鎢、三氧化鉬、電致變色、超級電容、Tungsten trioxide、Molybdenum trioxide、Electrochromic devices、Supercapacitor、Violet light shutter

Exploring supercapacitive properties of electrophoretic deposition and spray coated MoO3 nanoporous films

電子物理系所

電泳沉積、噴塗、三氧化鉬、奈米孔洞薄膜、超級電容、electrophoretic deposition、spray coating、molybdenum trioxide、nanoporous films、supercapacitor

Investigating electrical and optoelectronic properties of WSe2/TiTe2 heterostructure

電子物理系所

二硒化鎢、二碲化鈦、異質結構、二極體、光偵測元件、titanium ditelluride (TiTe2)、tungsten diselenide (WSe2)、heterostructure、diode、photodetector

Exploring TaS2 Electrode Contact on Device Performance of MoS2 Field-Effect Transistors

電子物理系所

二硫化鉬、二硫化鉭、場效電晶體、接觸電阻、提升載子遷移率、molybdenum disulfide、tantalum disulfide、field-effect transistor、contact resistance、enhanced carrier mobility

Raising mobilities of WS2 nanosheet FET by using MgF2 induced stress and strain

理學院應用科技學程

過渡金屬二維材料、二硫化鎢、電子遷移率、亞臨界擺幅、Transition Metal Dichalcogenides (TMDs)、WS2、Mobility、Subthreshold swing

Demonstration of Inverters and Complementary Field-Effect Transistors (CFETs) Based on MoS2 Using Spray Coating of Gold and Palladium Nanoparticles

電子物理系所

奈米金、奈米鈀、導線電爆炸技術、金屬導電薄膜、噴霧塗佈法、二硫化鉬、三氧化鉬、Au nanoparticles、Pd nanoparticles、Electro-exploding wire technique、metal conductive film、spray coating method、molybdenum disulfide、molybdenum trioxide

Electro-exploded NiO nanoparticles for the application of supercapacitors through electrodeposition and spray coating techniques

電子物理系所

超級電容、氧化鎳、導線電爆炸技術、噴霧塗佈法、電沉積法、Supercapacitors、Nickel oxide、Wire explosion technique、Spray coating method、Electrodeposition

Improvement and Building of The Home-Made Spray Coating Machine

理學院應用科技學程

噴塗機、氣動噴塗、熱電偶、薄膜、Spray coating machine、Pneumatic spraying、Thermal couple、Thin films

Development of Electrochemical Etching Methods for Making Nobel Metal (Pd) Alloy Tips

理學院應用科技學程

電化學蝕刻、貴金屬(鈀)、探針、硫酸(H₂SO₄)、直流和交流電、Electrochemical etching、Nobel metal、Palladium、Pd alloy tips、Probe pins

Development of touch keyboard with vibration feedback

理學院應用科技學程

鍵盤、震動回饋、馬達、觸控、keyboard、vibration feedback、motor、touch

Silver Oxide Nanoparticles Induced Stress and Strain Effects on Device Performances of MoS2 FETs

理學院應用科技學程

二硫化鉬、應力應變、拉伸效應、氧化銀粒子、載子遷移率、Molybdenum disulfide (MoS2)、Stress and Strain Effects、Strain effects、Ag nanoparticles、Carrier mobility

Precisive drug absorption with reduced residues for the automatic chemotherapy drug extraction machine

理學院應用科技學程

化療、自動、配藥機、精準度、殘餘量、absorption、residues、automatic、machine、extraction

Exploring electrical properties of MoS2 field-effect transistors with contact electrodes made by gold nanoparticles

電子物理系所・共同指導：楊本立

奈米金、噴霧塗佈法、二硫化鉬、場效應電晶體、導線電爆炸技術、spray coating method、field-effect transistor、molybdenum disulfide、wire electric explosion technology、nano-gold

Exploring Channel Length Effect on Mobilities of Suspended MoS2 Field-Effect Transistors

電子物理系所・共同指導：洪瑞華

懸浮式結構、二硫化鉬、介面陷阱電荷密度、飽和飄移速率、電子遷移率、Suspended structure、MoS2、interface trapped charge density、saturated drift velocity、electron mobility

Preparation of MoO3 nanomaterials by electro-exploding wire techniques for making electrochromic devices

電子物理系所

電致變色元件、三氧化鉬、導線電爆炸技術、奈米材料、噴霧塗佈法、Electrochromic devices、Molybdenum trioxide、Electro-exploding wire technique、Nanomaterials、Spray coating technique

Investigating Electrical and Optoelectronic Properties of In-doped GaSe Field-Effect Transistors

電子物理系所・共同指導：楊本立

二維材料、硒化鎵、場效電晶體、摻雜、接觸電阻、光電探測器、2D materials、Gallium selenide、Field effect transistors、Doping、Contact resistance、Photodetectors

Exploring Device Performances and Electron Transport in GaTe Field-Effect Transistors

電子物理系所・共同指導：楊本立

碲化鎵、場效電晶體、蕭特基位障、熱活化能、電子傳輸、Gallium Telluride、Field-effect transistors、Schottky barrier、Thermal activation energy、Electron transport

Device Performance of ReSe2 Field-Effect Transistors with Ta2O5 High-k Gate Dielectrics Prepared by Selective-Region Laser Oxidation of TaS2

理學院應用科技學程

二硒化錸、氧化鉭、二維材料、場效電晶體、選擇性區域雷射氧化、ReSe2、Ta2O5、2D materials、field-effect transistors、selective-region laser oxidation

Nanoparticles Induced Stress and Strain Effects on Device Performance of ReSe2 Field-Effect Transistors

理學院應用科技學程

二硒化錸、拉伸應力、能帶結構、有效質量、載子遷移率、ReSe2、Tensile strain、Local band gap、Effective mass、Electron mobility

Exploring Device Performance of MoS2 Field-Effect Transistors with Dielectrics of SiO2, SiNx, or h-BN

理學院應用科技學程

二硫化鉬、氮化矽、六方氮化硼、次臨界擺幅、介面缺陷密度、載子遷移率、MoS2、SiNx、h-BN、Subthreshold Swing、Interface Trap Density、Mobility

Electron Transport and Contact Resistance of TaS2 with Metal Electrodes of Au, Ti/Au, Ti/Ni and In/Au

理學院應用科技學程

二維材料、二硫化鉭、蕭特基能障、電性傳輸行為、場效電晶體、接觸效應、接觸電阻、2D material、TaS2、Schottky Barrier、Electrical Transport Properties、Field-Effect Transistor、Metal Contact Effect、Contact Resistance

High switching performance of MoS2 field-effect transistors with Ta2O5 dielectrics prepared by laser-writing assisted oxidation

電子物理系所

二維材料、二硫化鉬場效電晶體、高介電係數材料、次臨界擺幅、雷射氧化、2D material、MoS2 FET、high-K dielectric、subthreshold swing、laser oxidation

Exploring effects of stress and strain on electron transport and field-effect performance of few-layer MoS2 transistors

電子物理系所

二硫化鉬、拉伸效應、提升載子遷移率、拉曼光譜、圖形化基板、Molybdenum disulfide(MoS2)、Stress-strain effect、Enhanced mobility、Raman spectroscopy、Patterned substrates

Development of Automatic Searching for Stacking of 2D-Materials Using Deep learning

電子物理系所

深度學習、二維材料、自動化、對準堆疊機器、邊緣裝置、Deep learning、2D-materials、Automation、Stacking machine、Edge device

Electric transport and thermoelectric properties in few-layer PdSe2

電子物理系所

二硒化鈀、熱電效應、席貝克效應、熱電功率因子、PdSe2、Thermoelectric effect、Seebeck effect、Power Factor

Using Arduino for The Design of Electronic Controller for Scanning Tunneling Microscope

理學院科技與數位學習學程

掃描式穿隧電子顯微鏡、數位類比轉換、電流放大器、儀器自動控制、Scanning Tunneling Microscope、analog-to-digital and digital-to-analog conversion、current amplifier、electronic controller

Anisotropy of Electron Transport in Few-Layer SnS

電子物理系所

場效電晶體、硫化錫、各向異性、接觸電阻、蕭特基位障、熱活化能、特徵溫度、Field-effect transistor、Tin sulfide、Anisotropic、Contact resistance、Schottky barrier、Thermal activation energy、Characteristic temperature

Device Performance and Electron Transport in Double-Gated and h-BN Supported MoS2 FETs

電子物理系所

二硫化鉬、氮化硼、雙閘極場效電晶體、二硫化鉭、凡得瓦接觸、接觸電阻、載子遷移率提升、MoS2、h-BN、TaS2、Double-Gate Field-effect transistor、Van der Waals contact、contact resistance、enhanced mobility

Redesign of The Homemade Electro-Exploding Wire Machine and Fabrication of Nanostructured Gold Electrodes for Electrical Measurements

電子物理系所・共同指導：楊本立

導線電爆炸技術、金屬導電薄膜、奈米金、噴霧塗佈法、熱燒結、Electro-exploding wire technique、conducting film、Au nanoparticles、spray coating、thermal annealing

Electron Transport and Tunneling Effects of Bipolar Junction Transistors on Vertically Stacked 2D Materials of MoS2/BP/ReSe2

電子物理系所

二硫化鉬、黑磷、二硒化錸、異質接面、穿隧傳輸效應、共射極電流增益、MoS2、BP、ReSe2、heterojunction、tunneling transport、common-emitter current gain

Preparation of NiOx Nanomaterials by Electro-Exploding Wire Method for Making NiOx/WO3 Complementary Electrochromic Devices

電子物理系所・共同指導：楊本立

電致變色元件、氧化鎳、奈米結構材料、互補式電致變色、電爆炸奈米顆粒、Electrochromic device、Nickel oxide、Nanostructured materials、Complementary electrochromic、Electro-exploded nanoparticles

Exploring The Intrinsic Disorder, Substrate Effect, 2D Metal Contact, and Suspended Structure in 2D Semiconductors MoS2 Field-Effect Transistors

電子物理系所

二維材料、二硫化鉬、場效電晶體、傳輸機制、無序程度、Two-Dimensional Materials、MoS2、Field-Effect Transistors、Scattering Mechanism、Disorder

Design of Automatic Machine for Extraction of Chemotherapy Drugs and Injection into Intravenous (IV) Bag

理學院應用科技學程

自動化、儀器設計、化療藥物、注射與抽取、靜脈點滴袋、Automatic、Machine design、Chemotherapy Drugs、Injection and extraction、Intravenous (IV) Bag

Design and Development of Computer Keyboard with Vibration Feedback

理學院應用科技學程

鍵盤、震動、觸覺回饋、Computer keyboard、Vibration、feedback

Exploring Electron Transport in ReSe2/BN Heterostructure Field-Effect Transistors

理學院應用科技學程

二硒化錸、氮化硼、異質結構、基板效應、氧化層缺陷、介面能帶陷阱密度、ReSe2、h-BN、heterostructure、substrate effect、interface trap density

Development of The Wearable Display Attachment on Glasses

理學院科技與數位學習學程

穿戴式裝置、眼鏡、有效運動、生理表徵、心跳數率、wearable devices、glasses、effective exercise、physiological signs、heart rate

Device Performance and Electrical Properties of Double Gate Field-Effect Transistors Based on WS2/BN

理學院應用科技學程

二硫化鎢、氮化硼、雙閘極場效電晶體、載子遷移率提升、WS2、h-BN、Double-Gate Field-effect transistor、enhanced mobility

Fabrication of Vanadium Pentoxide Nanomaterials by Electro Explosive and Investigate Electrochromic Properties

理學院應用科技學程

五氧化二釩、電致變色、電爆炸、氟摻雜氧化錫、Vanadium Pentoxide、Electrochromic、Electro Explosive、FTO

The Homemade Electro-Exploding Wire Machine and The Demonstration of Tungsten Trioxide Film Deposition for Electrochromic Applications

電子物理系所

電致變色元件、三氧化鎢、導線電爆炸技術、噴霧塗佈方法、多孔結構電致變色薄膜、奈米結構材料、電爆炸奈米顆粒、Electrochromic device、Tungsten trioxide、Electro-exploding wire techniques、Spray coating、Porous electrochromic film、Nanostructured materials、Electro-exploded nanoparticles

Enhanced Flexibility and Accuracy of an Automatically Controlled Chair for Boron Neutron Capture Therapy

電子物理系所

自動控制醫療椅、可拆卸式裝置、吸盤固定腳架、可程式邏輯控制器系統、機動性、Automatically controlled medical-chairs、detachability、suction cups、programmable logic controller system、flexibility

Exploring Transport Mechanism and Contact Effect on MoS2 Heterocontact Field-Effect Transistors

物理研究所・共同指導：林俊源

二硫化鉬、石墨烯、異質結構、接觸電阻、蕭特基位障、氧化層缺陷、懸浮結構、介面捕獲電荷密度、Molybdenum disulfide (MoS2)、graphene、heterostructure、contact resistance、Schottky barrier、oxide defect、suspended structure、interface trapped density

Exploring Electron Transport and Memory Effect of Two-Dimensional MoOx/MoS2 Devices

電子物理系所

二硫化鉬、氧化製程、氧化鉬、蝕刻現象、場效電晶體、背對背蕭特基接觸、電子/電洞傳輸行為、記憶體效應、二極體特性、MoS2、Ozone Process、Molybdenum Oxide、Etching Phenomenon、Field-Effect Transistor、Back-to-Back Schottky Contact Behaviors、Electron/Hole Transport Properties、Memory Properties、Diode Behaviors

Optoelectronic properties of two-dimensional heterostructure devices fabricated by the homemade stacking alignment machine

電子物理系所

機械剝離法、黑磷、二硒化錸、二維異質結構、穿隧效應傳輸、光伏元件、光感測元件、2D van der Waals heterojunctions、mechanical exfoliation、black phosphorus、rhenium diselenide、photovoltaic cell、photodetector、tunneling transport

Optoelectronic Properties of ReSe2 Homojunction devices fabricated by the homemade high-precision alignment stacking machine

電子物理系所

高精度堆疊撕貼機、二硒化錸、氮化硼、二維異質結構、雙閘極場效電晶體、光伏元件、high-precision alignment stacking machine、rhenium diselenide (ReSe2)、hexagonal boron nitride (h-BN)、two-dimensional (2D) van der Waals heterostructures (vdWHs)、double gates transistor、photovoltaic device

Design of automatic tip approaching system for homemade scanning tunneling microscope

電子物理系所

掃描式穿隧電子顯微鏡、掃描穿隧能譜、自動化、進針、Scanning Tunneling Microscope、Scanning tunneling spectroscopy、Automation、Tip approaching

Exploring Electrical Contact Effects of TaS2 Electrodes on MoS2 Field-Effect Transistors

電子物理系所

二硫化鉬、二硫化鉭、場效電晶體、接觸電阻、蕭特基位障、金屬絕緣相變化、Molybdenum disulfide、Tantalum disulfide、Field-effect transistor、Contact resistance、Schottky barrier、Metal-insulator transition

Optoelectronic Performances of Electron and Hole Doped ReSe2 Homojunctions

電子物理系所

二硒化錸、電致摻雜、PN接面、光電二極體、光伏響應、ReSe2、Electrostatic doping、PN junction、Photodiode、Photovoltaic effect

Exploring The Transport Mechanism and Density of States of MoS2

理學院應用科技學程

二硫化鉬、氮化硼、場效電晶體、電性傳輸行為、穿隧結、MoS2、BN、molybdenum disulfide field-effect transistor、electron conduction mechanism、tunneling junction

Research and development of computer keyboard with haptic feedback

理學院應用科技學程

震動式回饋、鍵盤、computer keyboard、haptic feedback

Exploring Interface and Channel Length Modulation Effects on Suspended MoS2 Field-Effect Transistors

電子物理系所・共同指導：楊本立

懸浮式結構、二硫化鉬、次臨界擺幅、電子遷移率、應變-應力效應、Suspended structure、Molybdenum disulfide、Subthreshold swing、electron mobility、Strain-stress effect

Vertical Field Effect and Bipolar Junction Transistors of ReSe2/BP Heterostructures

電子物理系所

二硒化錸、黑磷、直接穿隧、Fowler-Nordheim穿隧、共射極電流增益、ReSe2、BP、direct tunneling、Fowler-Nordheim tunneling、common-emitter current gain

Investigation of Memory Device Mechanisms in Oxidized Molybdenum Disulfide flakes

電子物理系所・共同指導：楊本立

記憶體、二硫化鉬、氧化、電阻式記憶體、氧化鉬、電性傳輸機制、氧空缺、MoS2、MoOx、memory、RRAM、oxidation、electrical transport mechanisms、oxygen vacancy

Device Performance of TiTe2 Field-Effect Transistors at Different Metal Contacts and Dielectric Support

電子物理系所・共同指導：楊本立

二碲化鈦、氮化硼、場效電晶體、蕭特基位障、電性傳輸行為、Titanium Ditelluride、boron nitride、field-effect transistors、Schottky barriers、electrical transmission properties

Comparison of Different Nano-Multilayer Films for High Hardness Machining Materials

理學院應用科技學程

物理氣象沉積、濺鍍、端銑刀壽命、鍍膜後處理、PVD、Arce、End-Mill life time、Post-treatment

Metal Contact Effects of In, Ti, and Au Electrodes on MoS2 Field-Effect Transistor

理學院應用科技學程

二硫化鉬、場效電晶體、電性傳輸行為、接觸效應、MoS2、field effect transistor、electrical transport properties、metal contact effect

Exploration of electric properties of ReSe2 Transistor with Self-Gating Structure

電子物理系所

ReSe2、Electric properties、Opto-electronic Properties

Auto-Filling Equipment of Chemical Agent for Cancer Treatment

理學院應用科技學程

化療藥劑、3D列印、Solidworks、Arduino

Explore Carrier Number and Hooge Mobility Fluctuations in Low-Dimensional Electronics

電子物理系所・共同指導：林彥甫

低維度半導體、電晶體、傳輸特性、低頻雜訊、記憶體、Low-dimensional semiconductors、Transistors、Carrier transport properties、Low frequency noise、Memory

Investigation of Long-Range Coulomb Interactions on Thermoelectric Effect in Few-Layer Graphene

電子物理系所

少數層石墨烯、熱電效應、長距離電子-電子庫倫交互作用、非局部效應、Few-layer graphene、Thermoelectric effect、Long-range electron-electron Coulomb interactions、Non-local effect

Fabricating Perovskite Thin Film Solar Cell via Spray Coating Method

理學院應用科技學程

鈣鈦礦太陽能電池、噴霧塗佈系統、太陽光燈源模擬器、perovskite solar cell、spray coating system、sunlight source simulator

Development of High-Performance Probe Producing Machine

理學院應用科技學程

三軸相位維度、交流蝕刻製程、直流蝕刻製程、AC etching process、DC etching process、three-axis phase dimension

Substrate effect and metal-insulator transition in SnS2/h-BN heterostructure

電子物理系所

二硫化錫、氮化硼、基板效應、場效電晶體、電性傳輸行為、金屬-絕緣體相變化、SnS2、h-BN、substrate effect、field effect transistor、electrical transport properties、metal-insulator transition

Composition-Tunable Electrical and Thermoelectric Properties of 2D ReS2xSe2(1-x) Alloys

電子物理系所

ReS2xSe2(1-x)合金、電性及熱電傳輸特性、金屬-絕緣體相變化、各異向性、ReS2xSe2(1-x)、electrical and thermoelectric transport properties、metal-insulator transition、anisotropy properties

Exploring interface and contact effects on MoS2 field-effect transistors

電子物理系所

二硫化鉬、氮化硼、石墨烯、異質結構、蕭特基位障、接觸電阻、氧化層缺陷、MoS2、boron nitride、graphene、heterostructure、Schottky barrier height、contact resistance、oxide defect

The device of automatic control for boron neutron capture therapy

電子物理系所

硼中子捕捉治療、自動控制、Boron Neutron Capture Therapy、automatic control

Electrochromic Properties of Reduced Graphene Oxide and Molybdenum Trioxide Mixed with Tungsten Trioxide

電子物理系所

電致變色、三氧化鎢、三氧化鉬、還原氧化石墨烯、Electrochromic、Tungsten trioxide、Molybdenum trioxide、Reduced graphene oxide

Resistive Random Access Memory of Zinc Oxide Nanoparticles Generated by Electric Explosion

理學院應用科技學程

電阻式記憶體、氧化鋅、Resistive Random Access Memory、Zinc Oxide

Electrical properties of Suspended ReSe2 Field-Effect Transistor

理學院應用科技學程

二硒化錸、懸浮、場效電晶體、電導率、載子遷移率、ReSe2、Suspended、mobility、conductivity

Electric properties and thermoelectric properties of linear- and Y-shape Ni-DNA wires

電子物理系所

鎳離子、去氧核醣核酸、Ni-ion、Ni-DNA

Charge transport and optoelectronic properties of black phosphorus/rhenium diselenide heterojunction

電子物理系所

二維材料、異質接面、黑磷、二硒化錸、太陽能電池、光伏、2D material、heterojunction、black phosphorus、ReSe2、solar cell、photovoltaic

Electronic properties of suspended and supported few-layer WSe2 transistors

理學院應用科技學程

二硒化鎢、二維變程跳躍傳輸、金屬-絕緣體相變化、電性傳輸特性、WSe2、Variable Range Hopping (VRH)、metal-insulator transistion (MIT)、electronic transport properties

Exploration of Non-local Effect and Metal-Insulator Transition in Two-Dimensional System

電子物理系所

石墨烯、二硫化鉬、非局部效應、金屬絕緣體相變化、電性傳輸行為、graphene、MoS2、non-local effect、metal-insulator transition、electrical transport properties

Anisotropy of Electron Transport in Few-Layers ReSe2

電子物理系所

二硒化錸、各向異性、電子傳輸、ReSe2、Anisotrpy、Electron Transport

Home-Made Direct Laser Writer and Demonstration of Graphene Oxides Reduction

理學院應用科技學程

雷射直寫、還原氧化石墨稀、Laser Writer、(Reduced Graphene Oxide

Charge transport and optoelectronic properties of MoS2/P3HT nanowires heterojunction

電子物理系所

二硫化鉬、P3HT奈米線、異質接面、場效電晶體、MoS2、P3HT nanowires、heterojunction、field effect transistor

Anisotropy of Electrical and Thermoelectric Properties in ReSe2

電子物理系所

二硒化錸、各向異性、熱電、ReSe2、thermoelectric、Anisotropy

Investigating of long-range Coulomb interactions in monolayer and bi-layer graphene

電子物理系所・共同指導：楊本立

石墨烯、非局域性、長程庫倫交互作用、graphene、nonlocal、long-range Coulomb interactions

Metal-Insulator Transition and Electron Transport in Black Phosphorus

電子物理系所

二維材料、黑磷、金屬-絕緣體相變化、二維變程跳躍、熱活化傳輸、局域化長度、two-dimensional material、black phosphorus、metal-insulator transition、two-dimensional variable range hopping、thermally activated transport、localization length

Electrical properties and memory effects of pure and Cr-doped WSe2

電子物理系所

鉻摻雜、二硒化鎢、記憶體效應、電子遷移率、變程跳躍傳輸、Cr doped、WSe2、memory effect、mobility、variable range hopping、VRH

Exploration of the thermoelectric effect in Ni-DNA

電子物理系所

熱電、DNA、Ni-DNA

Electrochromic properties of tungsten oxide nanoparticles generated by electric explosion.

電子物理系所

氧化鎢薄膜、電致變色元件、電爆炸、tungsten oxide film、electrochromic device、electric explosion

Structure and Solar Conversion Efficiency of Zinc Selenide Thin Film Solar Cell

電子物理系所

薄膜太陽能電池、硒化鋅、砷化鎵、thin film solar cell、ZnSe、GaAs

Development of a confocal optical and scanning tunneling microscope with a nanoscale XY moving stage

電子物理系所

掃描穿隧電流顯微鏡、奈米移動平台、Scanning tunneling microscope、STM、Nanoscale XY moving stage

Development of a 2D material stacking machine and a microprobe maker

電子物理系所・共同指導：楊本立

二維材料、異質接面、微型探針、2D material、microprobe

Electrical and thermoelectric transport properties in few-layer MoS2

電子物理系所

熱電傳輸性質、電性傳輸性質、二維變程跳躍傳輸、席貝克效應、遲滯現象、二硫化鉬、thermoelectric transport properties、electrical transport properties、two-dimensional variable range hopping、Seebeck effect、hysteresis、molybdenum disulfide

Exploring Thickness Dependence on Electrical Properties of ReSe2 Flakes by Scanning Probe Microscope

電子物理系所

掃描探針顯微鏡、二硒化錸、Scanning Probe Microscope、ReSe2

Electrical properties and memory effects in self-oxidized MoOx/MoS2 transistor

電子物理系所・共同指導：楊本立

二硫化鉬、蕭基接觸、背對背蕭基二極體、二維變程跳躍傳輸、熱活化傳輸、記憶體特性、molybdenum disulfide、Schottky contact、back-to-back Schottky diodes、two-dimensional variable range hopping、thermally activated transport、memory effects

Nozzle Array Spraying System for Large Area Coating of Electrochromic Glass

理學院應用科技學程

電致變色、陣列式塗佈、大面積、Electrochromic、Nozzle Array Spraying System、Large Area Coating

Design of A Multiple-Probe Micro-Position Stage

理學院應用科技學程

微定位、Arduino、電鍍、探針、Micro-Position、Electroplating、Probe

Research and development of an automatic tip making system

理學院應用科技學程

製針、tip making

Deposition and Electron Transport Characterization of CH3NH3PbI3 Perovskites

電子物理系所

鈣鈦礦結、光阻塗佈、變程傳輸跳躍、CH3NH3PbI3、Perovskites、Spin Coating、Variable Range Hopping

Exploring Surface Structure and Electronic Properties of Oxidized Molybdenum Disulfide by Scanning Probe Microscopy

電子物理系所

二硫化鉬、氧化、掃描穿隧式電子顯微鏡、molybdenum disulfide、oxidation、scanning tunneling microscopy

Metal-insulator transition by using Schottky barrier in layered WSe2 transistors

電子物理系所

蕭特基位障、二硒化鎢、金屬絕緣相變化、變程跳躍、schottky barrier、WSe2、metal-insulator transition、varible range hopping

Exploration of the memcapacitance and thermoelectric effect in Ni-DNA

電子物理系所

記憶電容、熱電效應、memcapacitance、Ni-DNA、thermoelectric

Efficiency improvement of MoS2 field-effect transistors by using high channel electric field

電子物理系所

二硫化鉬、場效電晶體、電場、MoS2、field-effect transistor、electric field

Electron-phonon interaction induced high-temperature metal-insulator transition in few-layer MoS2

電子物理系所

二硫化鉬、高溫、金屬-絕緣體相變化、二維變程跳躍、熱活化傳輸、molybdenum disulfide、high temperature、metal-insulator transition、two-dimensional variable range hopping、thermally activated transport

Electron transport and field-effect properties of ferrocene on few-layer MoS2

電子物理系所

少數層二硫化鉬、二茂鐵、電子傳輸、場效電晶體特性、few-layer molybdenum disulfide、ferrocene、electron transport、field-effect properties

Refining The Package Processing and Material Analysis for Wafer Level Chip Scale Package

理學院應用科技學程

晶圓級封裝、覆晶封裝、底部填充膠、環氧樹酯導電膠、WLCSP、Flipchip、Underfiller、Epoxy

Electric field induced transverse voltage in pure Graphene

電子物理系所

石墨烯、電性量測、電場、非局域性、graphene、electrical measurements、Electric field、nonlocality

Exploring Surface Structure and Electronic Properties of Reduced Graphene Oxide by Scanning Probe Microscopy

電子物理系所

還原氧化石墨烯、掃描穿隧顯微鏡、原子力顯微鏡、表面物理、reduced graphene oxide、scanning tunneling microscopy、STM、atomic force microscopy、AFM

Development and application of automatic machine control on scanning tunneling microscope and magnetic data eraser

電子物理系所

掃描式穿隧電子顯微鏡、消磁機、STM、Data eraser

Fabrication and characterization of multifunctional heterojunction device by P3HT and ZTO nanowires

電子物理系所

氧化鋅錫、聚三己基噻吩、太陽能電池、光偵測器、三態緩衝器、奈米線、ZTO、P3HT、solar cell、photodetector、tri-state buffer、nanowire

Metal-insulator transition in few-layer MoS2

電子物理系所

二硫化鉬、金屬-絕緣體相變化、二維電子、變程跳躍、MoS2、metal-insulator transition、two dimensional electron、Variable range hopping

Investigation of Electronic Transport in High Electric Field on Reduced Graphene Oxide

電子物理系所

還原氧化石墨烯、電性傳輸、強電場、變程式跳躍傳輸、電子-電洞對、reduced graphene oxide、electron transport、variable range hopping、Schwinger mechanism、electron-hole pairs

Thermoelectric Transport Measurements of Reduced Graphene Oxide

電子物理系所

熱電效應、熱電、還原氧化石墨烯、Thermoeletric effect、Thermoeletric power、reduced graphene oxide

Electrical properties of PbTe-nanocrystal field effect transistor

電子物理系所

碲化鉛、場效電晶體、開關比、奈米顆粒、電性、傳輸機制、PbTe、FET、on off ratio、nanocrystal、electrical properties、transport mechanism

Electron Transport and Magnetoresistance of Magnetite Nanoparticles at Low Magnetic Field

電子物理系所

氧化鐵、奈米顆粒、強局域、變程跳躍傳輸、磁電阻、magnetite、nanoparticles、strong localization、variable range hopping、magnetoresistance

A Synthesis, Modification and Electrochemical Performance of Composite Cathode Material for Li-ion Batteries

理學院應用科技學程

鋰離子電池、Li-ion Batteries

Tunneling junction on pure graphene and high field electron transport in graphite oxide

電子物理系所

石墨烯、GRAPHENE

Exploring Electronic Properties of DLC Thin Films by Scanning Probe Microscopy

電子物理系所

類鑽碳、掃描穿隧顯微鏡、穿隧能譜、diamond-like carbon、Scanning Tunneling Microscope、Scanning Tunneling Spectroscopy

Investigation of band structure and electrical properties in two dimensional carbon base materials

電子物理系所

石墨烯、還原氧化石墨烯、電性傳輸、graphene、reduced graphene oxide、electrical property

Electrical properties of Au NPs with different sizes

電子物理系所

金奈米顆粒、Au NPs

Developmant and demostration of microscope

電子物理系所

掃描穿隧式電子顯微鏡、蜂鳴片、掃描器、STM、TEM、Scaner

Is PbS nanowire topological insulators

電子物理系所

硫化鉛奈米線、拓樸絕緣體、PbS nanowire、topological insulator

Investigation of Electron-Hole Pair Production in Reduced Graphene Oxide

電子物理系所

氧化石墨烯、電子電洞對、Graphene Oxide、J. Schwinger

Electronic Transport Mechanisms of PbSe Nanoparticles

電子物理系所

奈米顆粒、電性傳輸機制、硒化鉛、nanoparticle、electronic transport、PbSe

Probing photoelectric characteristics of graphene

電子物理系所

石墨烯、硫化鉛、光電流、graphene、PbS、photocurrent

Nanocontact and Logic Properties of Crossed Nanowire Device

電子物理系所

蕭特基、交叉奈米線、氧化鋅錫奈米線、電性傳輸、nano-Shottky contact、crossed-nanowire junction、ZTONW、electrical transport

Fabrication of memristive devices by using Ni-DNA

電子物理系所

鎳、螯合、去氧核醣核酸、脫氧核醣核酸、Ni、DNA、Ni-DNA

Electrical properties of PbS nanowire and C60-assembled bulk

電子物理系所

變程跳躍、局域長度、碳六十、硫化鉛、奈米線、自組裝、variable range hopping、localization length、fullerene、Lead sulfide、Nanowire、Self-assembly

Electron transport and field-effect characterizations for the novel electronic phase transition in ZTO nanowires

電子物理系所

氧化鋅錫、電性傳輸、相變化、場效應、ZTO、transport、transition、gate effect

The development of low voltage scanning tunneling microscopy

電子物理系所・共同指導：楊本立

掃描穿隧電流顯微鏡、穿隧效應、壓電效應、scanning tunneling microscope、tunneling effect、piezoelectric effect

Poly(3-hexylithiophene)/ZTO nanowire p-n junction for microelectronics

電子物理系所

P-N接面、奈米材料、氧化鋅錫、光伏特效應、P-N junction、ZTO、P3HT、photovoltaic

Probing Transport Mechanism and Density of States in Two-Dimensional ZnO Nanosheet

電子物理系所

氧化鋅、二維結構、傳輸機制、變程式跳躍傳輸、能態密度、Zinc Oxide、two-dimensional、2D VRH、density of states、ZnO

Contact Electrode Influences on Electrical Properties of ZnO Nanowire Devices

電子物理系所

氧化鋅、ZnO

Defect and Disorder Effects on Density of States of Reduced Graphene Oxides

電子物理系所

氧化石墨烯、能態密度、reduce graphene oxide、density of states

Nanocrystal Coupling Influences on Electrical Properties of PbSe Nanocrystal Array

電子物理系所

硒化鉛、奈米顆粒、跳躍傳輸機制、熱活化傳輸、PbSe、nanocrystal、hopping transport、thermally activated transport

Design of green and research type scanning tunneling microscope

電子物理系所

掃描式穿隧電流顯微鏡、自動步進器、步進器、低電壓、STM、scanning tunneling microscope、stepper、low voltage