洪瑞華

Development of Current Confinement Processing for Green InGaN/GaN Micro-Resonant-Cavity LEDs by Ion Implantation Technology

國際半導體越南境外專班

綠光共振腔發光二極體、微型發光二極體、氬離子佈植、電流侷限、分佈式布拉格反射鏡、Green resonant-cavity light-emitting diode、Micro-light-emitting diode、Ar-ion implantation、Current confinement、Distributed Bragg reflector

Impact of Segmented Gate Extension Geometry on the RF Linearity of AlGaN/GaN HEMTs

電子研究所・共同指導：張翼

氮化鎵、高電子遷移率電晶體、分段式閘極延伸、線性度、Ka頻段、GaN、HEMT、Segmented gate extension、Linearity、Ka-band

Development of Laser Assisted Epitaxial Layer Separation Technology from InP Substrate

電子研究所

雷射剝除技術、磷化銦/砷化銦鎵、磷化銦基板、磊晶剝除技術、玻璃基板、Laser lift-off、InP/InGaAs、InP substrate、epitaxial lift-off、glass substrate

Performance improvement of β-Ga₂O₃ Schottky Barrier Diodes with Field Plate Dielectric Structures

前瞻半導體研究所

氧化鎵、有機金屬化學氣相沉積、水平式蕭特基二極體、場板、漏電流、鈍化層、Ga₂O₃、MOCVD、lateral Schottky barrier diode(SBD)、field-plate、leakage current、passivation layer

Development and Investigation of Red Light Resonant Cavity Light Emitting Diodes

電機資訊國際碩士學位學程

紅光共振腔發光二極體、高調變頻率、高光輸出功率、增強型光譜純度、離子佈植、氧化、Red-Light Resonant Cavity Light Emitting Diode、High Modulation Frequency、High Light Output Power、Enhanced Spectral Purity、Ion Implantation、Oxidation

Study of E-Mode GaN HEMT Utilizing Composite Gate Stacks

前瞻半導體研究所・共同指導：韋光華

氮化鎵高電子遷移率電晶體、非掘入式、氧化鎳、氧化鉿鋯、臨界電壓調變、時相依介電崩潰、GaN HEMT、Non-recess、NiO、HZO、threshold voltage modulation、TDDB

Investigation of Lateral Ga₂O₃ Heterojunction PN Diodes

前瞻半導體研究所

超寬能隙材料、氧化鎵、異質PN二極體、基板偏切角、降溫通氧、幾何結構優化、Ultra-wide bandgap materials、Gallium oxide (Ga2O3)、Heterojunction PN diode、Substrate off-cut angle、Cool-down oxygen introduction、Geometry optimization

Study of Substrate Orientation and Epitaxial Structure on the Performance of Gallium Oxide Metal-Oxide-Semiconductor Field Effect Transistors

電子研究所

有機金屬化學氣相沉積、氧化鎵、金屬氧化物半導體場效電晶體、基板偏切、UID 層厚度、降溫通氧、metal-organic chemical vapor deposition、gallium oxide、metal-oxide-semiconductor field-effect transistor、substrate off-cut、UID layer thickness、oxygen cool-down

Ion-Implantation-Based Pixel Isolation Process for Passive-Matrix Micro-LED Arrays and System-Level Analysis

電子研究所

被動矩陣、微型發光二極體、離子佈植絕緣、鈍化層、均勻性分析、電壓降、統計分析、passive-matrix、micro-LED、ion implantation isolation、passivation、uniformity、IR-drop、statistical analysis

Study on Post-Metal Supercritical CO₂ Treatment on GaN Micro-LED Arrays with Different Pixel Isolation Mechanisms

電子研究所

像素隔離、電漿乾蝕刻、離子佈植、超臨界二氧化碳、漏電抑制、尺寸效應、Pixel isolation、ICP dry etching、Ion implantation、Supercritical CO₂ (SCCO₂)、Leakage suppression、Size effect

Influence of Epitaxy and Field-Plate Structures on the Electrical Performance of Vertical β-Ga₂O₃ Schottky Barrier Diodes

電子研究所

有機金屬化學氣相沉積、氧化鎵、垂直式蕭特基二極體、前驅物、漂移層、氮化鋁、場板、Metal Organic Chemical Vapor Deposition (MOCVD)、β-Ga2O3、Vertical Schottky Barrier Diode (SBD)、Precursor、Drift Layer、Aluminum Nitride (AlN)、Field Plate (FP)

A Study on Nitrogen Oxide Gas Sensing Using Zinc Oxide Thin Films Grown on Tungsten Nanostructures

電子研究所

氧化鋅、奈米結構、氮氧化物、氣體感測器、有機金屬化學氣相沉積、zinc oxide、nanostructure、nitrogen oxides、gas sensor、metal-organic chemical vapor deposition (MOCVD)

Fabrication and characterization of high-performance deep UV photodetectors using MOCVD-grown ZnGa2O4 epilayers for application under harsh environments

國際半導體產業學院

ZnGa2O4、深紫外、人造突觸、單晶、MOCVD、ZnGa₂O₄、Deep Ultraviolet、Artificial Synapse、Single Crystalline

Study of Thermal Annealing Effects on GaN HEMTs with Hybrid Ferroelectric Stacks Gate

電子研究所

氮化鎵高電子遷移率電晶體、閘極掘入、氧化鉿鋯、混合鐵電荷陷阱閘極疊層、退火條件、臨界電壓調變、變溫穩定性、閘極偏壓應力、GaN HEMT、gate-recessed、HZO ferroelectric film、hybrid ferroelectric/charge-trap gate stack、annealing conditions、threshold voltage modulation、temperature-dependent stability、gate-bias stress

Study of NiO/β-Ga₂O₃ Heterojunction PN Diodes for Power Device Applications

電機資訊國際碩士學位學程

β-Ga₂O₃ 外延層、NiO 薄膜、PN 異質接面二極體、MOCVD、RF 濺鍍、β-Ga2O3 epilayer、NiO thin film、PN heterojunction diode、RF sputtering

Study on HEMTs with β-Ga2O3/β-(AlxGa1-x)2O3 Heterostructures Grown by MOCVD

電子研究所・共同指導：陳永富

有機金屬化學氣相沉積、氧化鎵、氧化鋁鎵、屏障層、二維電子氣、閘極場板、Metal-Organic Chemical Vapor Deposition、Gallium Oxide、Aluminum Gallium Oxide、Barrier Layer、Two-Dimensional Electron Gas、Gate Field-Plate

METAL OXIDE BASED SEMICONDUCTORS FOR SUSTAINABILITY AND SENSING BASED APPLICATIONS

國際半導體產業學院・共同指導：J.P. Singh、Singh, J.P.

光檢測器、薄膜電晶體、鋅鎵氧化物（ZnGa₂O₄）、X 光檢測器、紫外光檢測器、電力裝置、Photodetectors、Thin film transistors、Zinc Gallium Oxide (ZnGa2O4)、X-ray detectors、UV detector、power devices

Effects of Substrate Orientation on the Performance of Gallium Oxide Enhancement-Mode Metal-Oxide-Semiconductor Field Effect Transistors

電子研究所

有機金屬化學氣相沉積、氧化鎵、金屬氧化物半導體場效電晶體、閘極掘入、前驅物、偏切基板、閘極長度、metal-organic chemical vapor deposition (MOCVD)、β-Ga2O3、metal-oxide-semiconductor field-effect transistor (MOSFET)、recessed gate、precursor、off-cut substrate、gate length

Study on the Performance of β-Ga2O3 Metal-Oxide-Semiconductor Field Effect Transistors with Non-Recess Etch Structure

電子研究所

有機金屬化學氣相沉積、氧化鎵、超寬能隙材料、金屬氧化物半導體場效電晶體、High-k材料、Metal-organic chemical vapor deposition (MOCVD)、Gallium oxide (β-Ga2O3)、Ultra-wide bandgap material、Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)、High-k dielectric

Study of Ion-Implantation Technology on Micro-LED Displays and Visible Light Communication

前瞻半導體研究所

微型發光二極體、離子佈植技術、尺寸效應、可見光通訊、菲涅爾繞射、Micro-LED、ion-implantation technology、size effect、visible light communication、Fresnel diffraction

Study on Performance Optimization of Vertical-Cavity Surface-Emitting Laser by Dielectric Mirror and Ion implantation Technologies

電子研究所

垂直腔面射型雷射、介電布拉格反射鏡、離子佈植、砷化鎵基板、矽/二氧化矽多層膜、VCSEL、dielectric distributed Bragg reflectors、ion implantation、GaAs substrate、Si/SiO2 film stacks

Study on Optimizing Performance of Zinc Gallium Oxide Based Gas Sensors with Silver Nanoparticles Surface Modification

電子研究所

有機金屬化學氣相沉積、氧化鋅、氧化鎵鋅、氮氧化物氣體感測器、奈米結構、貴金屬奈米粒子、MOCVD、ZnO、ZGO、NOx gas sensor、nanostructure、noble metal nanoparticle

Study on Enhanced Mode MOSFETs Properties of β-Ga2O3 Heteroepilayers Grown by MOCVD

前瞻半導體研究所

有機金屬化學氣相沉積、氧化鎵、閘極掘入、低導通電阻、氧空缺、閘極場板、矽摻雜濃度、MOCVD、β-Ga2O3、Recessed-gate、Low on resistance、Oxygen vacancies、Gate field plate、Si-doped concentration

Research on Improving the Light Extraction Efficiency of Gallium Nitride Thin-film Micro-Light-Emitting Diodes through Surface Texture Treatment

電子研究所

雙鈍化層、離子佈植、Micro-LED、覆晶接合、雷射剝離、表面粗糙化、Double passivation layer、ion implantation、flip-chip bonding、laser lift-off、surface texturing

Study on Lateral Schottky Barrier Diodes of β-Ga2O3 Heteroepilayer and Process Optimization

電子研究所

氧化鎵、有機金屬化學氣相沉積、水平式蕭特基二極體、氮氣熱退火、氧空缺、漏電流、gallium oxide (Ga2O3)、metalorganic chemical vapor deposition (MOCVD)、lateral Schottky barrier diodes (SBDs)、nitrogen annealing、oxygen vacancies、leakage current

Study on the Performance Improvement of GaN-Based Micro Light-Emitting Diode

光電工程學系・共同指導：林怡欣

微型發光二極體、非輻射複合、離子佈植、側壁處理、氮化鎵粗化、Micro-LED、non-radiative recombination、ion implantation、sidewall treatment、GaN texture

Study on the P-type Gallium Oxide Epitaxial Films and the Applications in Power Diodes

電子研究所

寬能隙材料、P型氧化鎵、磷離子佈植、有機金屬化學氣相沉積、同質PN二極體、異質PN二極體、功率二極體、Ultra-wide bandgap material、P-type Ga2O3、Phosphorus ion implantation、Metal organic chemical vapor deposition (MOCVD)、Homojunction、Heterojunction、Power diode

Study on the Improvement and Reliability of GaN HEMTs with Dry Etching Technology

電子研究所

氮化鎵、高電子遷移率電晶體、碳化矽基板、閘極掘入、中性粒子束蝕刻、界面缺陷分析、臨界電壓不穩定性、閘極場平板、GaN、high electron mobility transistor、SiC substrate、Gate recessed、Neutral beam etching、Interface defect analysis、threshold voltage instability、Gate field plate

Study on Micro-Light Emitting Diodes by Neutral Beam Etching Technology

電子研究所

中性粒子束蝕刻、微型發光二極體、離子佈值技術、尺寸效應、側壁面積 比、電漿轟擊、Neutral Beam Etching、Micro-Light Emitting Diode、Ion implantation technique、Size Effect、Sidewall Surface Ratio、Plasma Bombardment

Research and development of high-frequency quartz oscillator

光電工程學系・共同指導：余沛慈

SU-8、ICP-RIE、wet etching、Quartz Oscillators、感應耦合電漿離子蝕刻、濕蝕刻、石英振盪器

Nanofog and Soak-Assisted Atomic Layer Deposition for Dual Gate and Gate-All-Around Two-Dimensional Transistors

電子研究所・共同指導：簡昭欣

二維材料、奈米霧、浸泡技術、原子層沉積技術、等效閘極氧化層厚度、次臨界擺幅、環繞式閘極電晶體、Two-dimensional materials、Nanofog、Soak、Atomic Layer Deposition、Equivalent Oxide Thickness、Subthreshold Swing、Gate-All-Around Transistor

Study on the Performance of NO Gas Sensor Made of ZnGa2O4 and Relative Circuit Module Development

電子研究所

有機金屬化學氣相沉積、氧化鎵鋅、氧化鋅、一氧化氮氣體感測器、Si離子佈植處理、氣體響應模型、MOCVD、ZGO、ZnO、NO gas sensor、Si ion implantation treatment、gas sensing model

Study on the Properties of N-type Gallium Oxide and Applied to Schottky Diodes

電子研究所・共同指導：施敏

金屬、蕭特基二極體、氧化層、氧化鎵、MOCVD、TEOS、Metal、Schottky diode、oxide layer、gallium oxide、metal organic chemical vapor deposition (MOCVD)、tetraethoxysilane (TEOS)

Study on Ultra-Wide Bandgap Gallium Oxide Enhanced-Mode MOSFET

電子研究所・共同指導：張翼

有機金屬化學氣相沉積、氧化鎵、寬能隙材料、金氧半場效電晶體、增強型電晶體、氧空缺、緩衝層分析、Metal-organic Chemical Vapor Deposition (MOCVD)、Ga2O3、Wide-bandgap material、Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)、Enhanced-mode transistor、Oxygen vacancies、Buffer layer analysis

Study of ion-implantation technology on blue micro-LED array applications

電子研究所・共同指導：陳永富

微型發光二極體、像素化、離子佈植技術、電性隔離、通道效應、二次離子質譜分析儀、Micro-LED、pixelation、ion implantation technology、electrical isolation、channel effect、SIMS

Study on the Properties of Gallium Oxide on SiC Substrate and Applied to Vertical Schottky Diodes

電子研究所

有機金屬化學氣相沉積、氧化鎵、熱退火、垂直式蕭特基二極體、緩衝層、飄移層、MOCVD、Ga2O3、thermal annealing、Vertical Schottky Diodes、buffer layer、drift layer

Investigation of Substrate Effects on Performance of Vertical Cavity Surface Emitting Lasers

電子研究所

VCSEL、基板轉移、散熱、substrate transfer、heat transfer

Study on the Characteristics of GaN HEMTs Grown on SiC Substrates and Relative Wafer Bonding Technology

電子研究所

高電子遷移率電晶體、氮化鎵、碳化矽基板、藍寶石基板、自發熱效應、晶圓貼合、表面親水性、high electron mobility transistor、GaN、SiC substrate、sapphire substrate、self heating effect、wafer bonding、surface hydrophilicity

Study on the Effect of Arsenic Ion Implantation on the Performance of Micro-Light Emitting Diode Arrays

電子研究所

無光罩雷射直寫曝光技術、離子佈植、micro-LED陣列、側壁面積比、側壁效應、maskless technology、laser direct writing、ion implantation、micro-LED array、sidewall surface ratio、sidewall effect

Improvement Study of Noise and Output Power of GaN HEMT with Thick Cu-Interconnection for Satellite-Communicated System Applications

電子研究所・共同指導：張翼

氮化鎵、高電子遷移率電晶體、厚銅導線、雜音特性、輸出功率特性、衛星通訊系統、GaN、HEMT、Thick copper interconnection、Noise characteristics、Output power characteristics、Satellite communication system

Thermal Dissipation Improvement of AlGaInP-Based Light Emitting Diodes with Cu/Invar/Cu Substrate

電子研究所・共同指導：曾俊元

紅色發光二極體、共金貼合、銅釩銅、散熱、固晶、red LED、metal bonding、copper invar copper、thermal dissipation、die bonding

Passive matrix blue micro-LED display and application of ion implantation technology

電子研究所

微型發光二極體、間接貼合、絕緣層、離子佈植技術、全點亮顯示器、Micro-LED、indirect bonding、insulating layer、ion implantation technology、full light display

Study on Optimizing the Performance of NO Gas Sensor Fabricated by ZnGa2O4 Using Plasma Surface Treatment

電子研究所

有機金屬化學氣相沉積、氧化鎵鋅、一氧化氮氣體感測器、電漿處理、氣體響應模型、MOCVD、ZGO、NO gas sensor、plasma treatment、gas sensing model

Optimization of gallium nitride structure for high power field effect transistor application and related thermal dissipation investigation

電子研究所

高功率場效電晶體、氮化鎵、乾式深蝕刻、電鍍、散熱優化、HEMT、gallium nitride、deep dry etching、heat dissipation optimization

Study on Performance Improvement of Deep-Ultraviolet Photodetectors Based on Epitaxial ZnGa2O4 Epilayers

電子研究所

有機金屬化學氣相沉積、氧化鎵鋅、深紫外光感測器、材料分析、緩衝層、氧化鎵、氧化鋅、紫外光-臭氧處理、MOCVD、ZnGa2O4、DUV photodetector、material analysis、buffer layer、Ga2O3、ZnO、UV-ozone treatment

Study on Acetone Gas Sensor Fabrication and Related Properties of InAlN Epilayers Grown by UHV Magnetron Sputtering

電子研究所

高真空磁控濺鍍、氮化銦鋁、丙酮氣體感測器、高溫退火效應、薄膜表面分析、氣體反應模型、Ultra High Vacuum DC magnetron sputtering、InAlN、Acetone Gas Sensor、Annealing Effect、Surface Morphology、Gas Sensing Model

Study on the Performance of Deep-Ultraviolet Photodetectors Using Ga2O3 Epilayers with Different Buffer Layer Grown by MOCVD

電子研究所

有機金屬化學氣相沉積、氧化鎵、氧化鎵鋅、深紫外光感測器、缺陷分析、MOCVD、Ga2O3、ZnGa2O4、DUV photodetector、Defects analysis

Exploring Channel Length Effect on Mobilities of Suspended MoS2 Field-Effect Transistors

電子物理系所・共同指導：簡紋濱

懸浮式結構、二硫化鉬、介面陷阱電荷密度、飽和飄移速率、電子遷移率、Suspended structure、MoS2、interface trapped charge density、saturated drift velocity、electron mobility

Study on the performance of power diodes using Si-ions implanted β-Ga2O3 epilayers grown on the sapphire substrates

電機資訊國際學程

本質未摻雜氧化鎵磊晶層、矽離子佈植、蕭特基二極體、金屬、絕緣層半導體二極體、快速熱退火處理、蕭特基、歐姆接觸、Unintentionally doped (UID) Ga2O3 epilayers、Si-ions implantation、Schottky barrier (SB) diodes、Metal-insulator-semiconductor (MIS) diodes、Rapid thermal annealing (RTA) treatment、Schottky-Ohmic (S-O) distances

A Study of n-side up Thin Film AlGaInP Red Vertical LEDs with Copper/Invar/Copper Metal Substrates

台聯大光電博士學位學程

銅–殷鋼–銅、磷化鋁銦鎵、垂直微發光二極體、晶圓貼合、磊晶薄膜轉移、矽基板、copper-invar-copper、AlGaInP、V-μLEDs、wafer bonding、epitaxial film transfer、Si substrate

Study of Thermal Effect on the Performance of GaN Based High Electron Mobility Transistor

電子研究所

高電子遷移率電晶體、氮化鎵、深反應離子蝕刻、散熱改善、HEMT、GaN、DRIE、Heat dissipation

Reliability Study on Deep-Ultraviolet Photodetectors Based on Epitaxial ZnGa2O4 Epilayers Grown by MOCVD

電子研究所・共同指導：施敏

有機金屬化學氣相沉積、氧化鎵鋅、深紫外光感測器、缺陷分析、蕭特基接觸、可靠度問題、表面鈍化層、氧化鋁、氧化鉿、氮化矽、MOCVD、ZnGa2O4、DUV photodetector、Defects analysis、Schottky contact、reliability issue、surface passivation layer、Al2O3、HfO2、Si3N4

Investigation of substrate thinning on heat dissipation applications of silicon photonic system

電子研究所

矽光子、熱逸散、silicon photonics、heat dissipation

Development of Bonding Processing for Passive Matrix Micro-LED Display Applications

電子研究所

微發光二極體、異方性導電膠、共金貼合、顯示器技術、Micro-LED、Anisotropic conductive film (ACF)、metal bonding、display technology

Study on flip-chip bonding for flexible substrate and light extraction of ultraviolet light emitting diode applications

電子研究所

覆晶式發光二極體、異方性導電膜、軟性基板、撓曲測試、全方位反射鏡、表面粗化、filp chip LED、anisotropic conductive film、flexible substrate、bending test、omnidirectional reflector、surface roughness

Study on Gas Sensor with Micro Heater of Ga-doped ZnO Epilayers Grown by MOCVD

電子研究所・共同指導：施敏

有機金屬化學氣相沉積、鎵摻雜氧化鋅、一氧化氮氣體感測器、尺寸效應、微型加熱器、氣體響應、MOCVD、Ga-doped ZnO、NO gas sensor、Dimension Effect、Micro Heater、Gas Response

Water splitting using III-V solar cell with replaceable electrodes

電子研究所

太陽能、水分解、Solar water splitting

Development of bonding technology for passive red light-emitting diode displays application

電子研究所

微型發光二極體顯示器、磊晶膜轉移技術、異方性導電膜、Micro LED displays、Epilayer transfer technology、Anisotropic conductive film (ACF)

Effects of Chip Sizes and Semi-polar Substrate on the Performance of Blue/Green-LEDs

電子研究所

微發光二極體、歐姆接觸、高溫退火、半極化氮化鎵、Micro light-emitting diode(micro-LED)、Ohmic contact、annealing、semi-polar GaN

Study on the optimized structure of heat dissipation for silicon photonic applications

電子研究所

矽光子、散熱、Si photonics、Heat dissipation

Investigation and optimization of the NOx gas sensor based on ZnGa2O4 epilayers grown by MOCVD

電子研究所

有機金屬化學氣相沉積、氧化鎵鋅、氮氧化物氣體感測器、缺陷分析、氧氣浸潤、微加熱器、MOCVD、ZnGa2O4、NOx gas sensor、Defects analysis、Oxygen soaking、Micro heater

Performance Improvement of N-side up AlGaInP-based LED by Composite Metal Substrate

電子研究所

銅釩銅基板、紅光發光二極體、晶圓貼合、磊晶膜轉移、銅鎢基板、CIC (copper invar copper)、red light emitting diode、wafer bonding、epilayer transfer、CuW substrate

Study of Deep-Ultraviolet Phototransistors and Related Performance Based on Wide Bandgap Materials Grown by MOCVD

電子研究所

有機金屬化學氣相沉積、氧化鎵、氧化鎵鋅、鋅流量、金氧半場效電晶體、工作模式、缺陷分析、深紫外光感測器、光電晶體、MOCVD、Ga2O3、ZnGa2O4、Diethylzinc、MOSFET、Operational mode、Defects、DUV photodetectors、phototransistors

Study on Gas Sensor Fabrication and Related Properties of ZnGa2O4 Epilayers Grown by MOCVD

電子研究所

有機金屬化學氣相沉積、一氧化氮氣體感測器、氧化鎵鋅、高溫退火效應、薄膜表面分析、氣體響應模型、MOCVD、ZnGa2O4、NO gas sensor、annealing effect、best measurement condition、surface morphology、gas sensing model

Nano-structure effects on the light extraction of AlGaInP red LEDs

電子研究所

奈米壓印、表面粗化、取光效率、磷化鋁銦鎵、發光二極體、nanoimprint、surface texture、light extraction、AlGaInP、Light Emitting Diode

Thermal Annealing Effects on Deep-ultraviolet Photodetectors Based on Epitaxial ZnGa2O4 thin films Grown by MOCVD

電子研究所

有機金屬化學氣相沉積、氧化鎵鋅、深紫外光感測器、高溫退火、缺陷分析、蕭特基接觸、歐姆接觸、MOCVD、ZnGa2O4、DUV photodetector、Annealing、Defects、Schottky contact、Ohmic contact

Study on MOSFETs Fabrication and Related Properties of ZnGa2O4 Epilayers Grown by MOCVD

電子研究所

有機金屬化學氣相沉積、氧化鎵、氧化鎵鋅、金氧半場效電晶體、工作模式、元件缺陷、遲滯現象、元件可靠度分析、MOCVD、Ga2O3、ZnGa2O4、MOSFET、Operational Mode、Trapped charge、Hysteresis phenomenon、Reliability