張翼

Investigation of Atomic Layer Etched Ohmic Recess and Metallization Engineering for AlGaN/GaN HEMT Ohmic Contacts

材料科學與工程學系

氮化鎵、原子層蝕刻、歐姆接觸、接觸電阻、歐姆凹蝕、金屬結構、Gallium nitride、Atomic layer etching、Ohmic contact、Contact resistance、Ohmic recess、Metal stack

Investigation of Non-Etched-Barrier AlGaN/GaN Schottky Barrier Diodes and Graded AlGaN/GaN Barrier Structures for Power Devices

前瞻半導體研究所

氮化鋁鎵/氮化鎵功率元件、蕭特基位障二極體、漏電抑制、漸變式氮化鋁鎵/氮化鎵異質結構、AlGaN/GaN power devices、Schottky barrier diode、leakage suppression、graded AlGaN/GaN heterostructure

Enhanced Electrical and High-Frequency Performance of InAlGaN/GaN HEMTs through Surface Modification

材料科學與工程學系

氮化鋁銦鎵/氮化鎵、高電子遷移率電晶體、氮氣電漿處理、表面處理、高頻元件、InAlGaN/GaN、high electron mobility transistor、N2 plasma treatment、surface treatment、high-frequency device

Impact of Segmented Gate Extension Geometry on the RF Linearity of AlGaN/GaN HEMTs

電子研究所・共同指導：洪瑞華

氮化鎵、高電子遷移率電晶體、分段式閘極延伸、線性度、Ka頻段、GaN、HEMT、Segmented gate extension、Linearity、Ka-band

Electrical Characterization and Reliability Analysis of Ferroelectric-Gate GaN HEMTs at Cryogenic Temperatures

國際半導體產業學院

氮化鎵高電子遷移率電晶體、鐵電閘極、低溫操作、可靠度、臨界電壓、場板結構、障壁層工程、GaN HEMT、Ferroelectric gate、Cryogenic operation、Reliability、Threshold voltage、Field plate、Barrier engineering

Optimization of Fabrication Process and Electrical Performance of High-Power Recess-Free Thin-Barrier AlGaN/GaN Schottky Barrier Diodes with MIS-Gated Anode Structure

國際半導體產業學院

蕭特基障壁二極體、金屬–絕緣層–半導體閘極控制陽極結構、無陽極凹槽結構、製程可重複性、反向漏電流、反向恢復電荷、電壓遲滯、Schottky barrier diode、MIS-gated anode、anode-recess-free structure、process reproducibility、reverse leakage current、reverse recovery charge、voltage hysteresis

Integration of Zr-Rich HZO Gate Stacks in Self-Aligned In0.65Ga0.35As MOSFETs for DC Characteristics and Potential RF Application

國際半導體產業學院

砷化銦鎵、高銦含量、金氧半場效電晶體、富鋯氧化鉿鋯、自對準閘極、InGaAs、high indium content、MOSFET、Zr-rich HZO、Self-aligned Gate

Ultra-Low-Damage Processing and Interface Engineering of GaN-Based HEMTs on Silicon for High-Power Millimeter-Wave Applications

國際半導體產業學院

氮化鎵高電子遷移率電晶體、矽基氮化鎵、原子層蝕刻、歐姆接觸凹蝕、閘極凹蝕、毫米波、增強型元件、AlGaN/GaN Heterostructures、InAlGaN/GaN Heterostructures、GaN High Electron Mobility Transistors (GaN HEMTs)、GaN-on-Silicon (GaN-on-Si)、Atomic Layer Etching (ALE)、Ohmic Recess、Gate Recess、Millimeter-Wave (mmWave)、Enhancement-Mode (E-mode)

Investigation of 4H-SiC and β-Ga2O3 Power MOSFETs via TCAD Simulation and Reliability Testing

國際半導體產業學院

碳化矽、氧化鎵、金屬氧化物半導體場效電晶體、正向偏壓溫度不穩定性、動態導通電阻、閾值電壓不穩定性、半導體元件模擬、4H-SiC、β-Ga2O3、MOSFET、TCAD、PBTI、Dynamic On-Resistance、Threshold Voltage Instability

AlGaN/GaN MIS-HEMTs with Amorphous Boron Nitride Gate Dielectric for Ultra-Low Gate Leakage and Enhanced Thermal Performance

國際半導體產業學院

氮化鋁鎵/氮化鎵、金屬–絕緣層–半導體高電子遷移率電晶體、非晶氮化硼、閘極漏電抑制、射頻特性、熱特性、低軌衛星、AlGaN/GaN、MIS-HEMTs、amorphous boron nitride、gate leakage、RF performance、thermal performance、low-Earth-orbit satellites

Study of the Influence of Ohmic Recess on AlGaN/GaN HEMTs

工學院專班-半導體材料與製程設備學程

氮化鎵高電子遷移率電晶體、歐姆接觸、歐姆蝕刻、氮化鈦、接觸阻抗、AlGaN/GaN HEMTs、Ohmic Contact、Ohmic recess、Titanium Nitride (TiN)、Contact Resistance

Demonstration of 2-Stacked InGaAs Nanosheet MOSFETs for Next generation Logic Applications

材料科學與工程學系奈米科技

砷化銦鎵、雙層奈米片金氧半場效電晶體、環繞式閘極場效電晶體、奈米 片通道、短通道效應、毛細作用力、InGaAs、2-Stacked Nanosheet MOSFET、GAA FET、Nanosheet Channel、Short-Channel Effects、Capillary Force

Investigation of Charge Dynamics in E-mode Ferroelectric Charge Trap Gate GaN MIS-HEMT

國際半導體產業學院

金氧半高電子遷移率電晶體、脈衝量測、正向偏壓溫度不穩定性測試、閾值電壓不穩定性、可靠度、MIS-HEMTs、pulsed measurement、PBTI、VTH instability、reliability

Self-Aligned InGaAs MOSFET for DC & RF application

國際半導體產業學院

自對準製程、砷化銦鎵、金氧半場效電晶體、高頻元件、高介電材料、Self-aligned gate、InGaAs、MOSFET、RF application、High-k dielectric

Dynamic Reliability and Defect Kinetics of Tri-Gate AlGaN/GaN MOS-HEMTs for High-Power Systems

國際半導體產業學院

氮化鎵金氧半高電子遷移率電晶體、三閘極、偏壓溫度不穩定性、缺陷動力學、AlGaN/GaN MOS-HEMT、Tri-gate、Bias temperature instability、Defect kinetics

Enhancement-mode Thin Barrier AlGaN/GaN HEMT with NiO Gate Structure

材料科學與工程學系

氮化鎵、增強型、氧化鎳、薄障壁、GaN、E-mode、NiO、Thin Barrier

Process Optimization and Reliability Analysis of Enhancement-mode Tri-gate AlGaN/GaN Power MIS HEMT with Hybrid Ferroelectric Charge Trap Gate Stack

國際半導體產業學院

高電子遷移率電晶體、鐵電電荷陷阱柵堆疊、功率元件、NBTI、TDDB、High Electron Mobility Transistors、ferroelectric charge-trap gate stack、power devices

InAlGaN/GaN Tri-Gate MIS-HEMT with Hybrid Ferroelectric Charge Trap Gate Stack

國際半導體越南境外專班

金屬–絕緣層–半導體高電子遷移率電晶體、InAlGaN/GaN 異質結構、三閘極 結構、可靠性、混合鐵電層、閘極漏電流機制、MIS-HEMT、InAlGaN/GaN、Tri-gate structure、Reliability、Hybrid Ferroelectric layer、Gate leakage current mechanism

GaN-Drain n-MOSFETs on Si(100) via Selective Area Epitaxy

國際半導體產業學院

氮化鎵/矽 (GaN-on-Si(100))、選擇區磊晶 (SAE)、GaN 汲極 n-MOSFET、回熔蝕刻抑制、CMOS製程整合、矽應變通道、元件物理、GaN-on-Si(100)、Selective area epitaxy (SAE)、GaN-drain n-MOSFETs、Melt-back etching suppression、CMOS-compatible integration、Strained-channel Si、Device physics

Growth and Characterization of InGaN Back-Barrier for InAlGaN Heterostructure

國際半導體越南境外專班

GaN、InGaN 背障、電子侷限、短通道效應、HEMTs.、InGaN back-barrier、electron confinement、short channel effect

Fabrication and Reliability of Tri-gate Enhancement-Mode GaN HEMTs with AlN/HfO2 Dual-Gate Dielectric for Power Switching Applications

國際半導體越南境外專班

AlGaN/GaN 異質結構、高電子遷移率電晶體、三閘極、高介電常數介電層、大功率裝置、半導體製程、可靠性、AlGaN/GaN heterostructure、HEMT、Tri-gate、High-k dielectric、High-power device、Semiconductor processing、Reliability

Process Optimization and Reliability Analysis of High-Power Recess-Free Thin-Barrier AlGaN/GaN Schottky Barrier Diodes with MOS-Gated Anode Structure

材料科學與工程學系奈米科技

無蝕刻技術、薄阻障層、鈍化、金氧半閘極控制陽極結構、蕭特基二極體、Recess-free technology、Thin-barrier layer、Passivation、MOS-gated anode、Schottky barrier diode

Heteroepitaxial Growth of GaN Integrated on the Drain Area of Si MOSFETs through Selective Area Growth

材料科學與工程學系

選擇性區域長晶、氮化鎵、異質整合、金屬有機化學氣相沉積法、矽金氧半場效電晶體、Selective Area Growth、GaN、Heterogeneous Integration、MOCVD、Si MOSFET

Enhance RF Performance of GaN HEMTs by Atomic Layer Etching Gate Recess

材料科學與工程學系

原子層蝕刻、氮化鎵、S 參數、功率特性、射頻特性、掘入式閘極製程、矽基氮化鎵技術、Atomic layer etching、GaN、S-parameters、Power performance、RF performance、gate recess process、GaN-on-Si

Enhancement of High-performance AlGaN/GaN on Si double recessed Lateral Schottky Barrier Diode With Ladder Shaped Anode via Atomic Layer Etching

國際半導體產業學院

氮化鎵、氮化鋁鎵、蕭基二極體、閘極邊緣終端、掘入式陽極、GaN、AlGaN、Schottky barrier diode、gated edge termination、recessed anode

Studying the Influence of Interface Traps on Device Performance and Threshold Voltage Stability of AlN/HfO2 AlGaN/GaN MOS-HEMTs

國際半導體越南境外專班

凹槽閘極、原子層蝕刻、數位蝕刻、高k閘極電介質、GaN HEMT、recessed-gate、atomic layer etching、digital etching、high-k gate dielectric、AlN、HfO2

Investigation of GaN-based HEMTs using the double-channel AlGaN/GaN heterostructure for power applications

國際半導體越南境外專班

氮化鋁鎵/氮化鎵異質結構、多通道、高電子遷移率電晶體、二維電子氣、高功率元件、AlGaN/GaN heterostructure、Multi-channel、Double-channel、HEMT、2DEG、High power device

Application of an Improved Failure Mode and Effect Analysis in Equipment Risk Assessment- A Case Study of Drying Equipment

工學院專班-產業安全與防災學程

設備風險評估、乾燥設備、恆溫恆濕機、ISO 12100、CNS 15347、FMEA、Equipment Risk Assessment、Drying Equipment、Constant Temperature and Humidity Chamber

Investigate the Impact of Passivation and Field Plate Structures on the Switching Performance and Trapping Behavior of InAlGaN/GaN HEMTs

前瞻半導體研究所

高電子遷移率電晶體、氮化銦鋁鎵、鈍化與電介質、場板結構、動態導通電阻、高溫循環測試、High-Electron-Mobility-Transistors (HEMTs)、InAlGaN、Passivation and Dielectric、Field Plate、Dynamic ON-Resistance、High-Temperature Cycling Test

Heterostructure Engineering and Material Optimization of InAlGaN/GaN High Electron Mobility Transistors

國際半導體產業學院

InAlGaN/GaN高電子遷移率電晶體、氮化鈦歐姆接觸、中間層異質結構、低漏電流設計、高頻特性優化、RF performance optimization、InAlGaN/GaN HEMT、titanium nitride ohmic contact、interlayer heterostructure、leakage current suppression

Investigation of the Effect of Non-alloyed Metal Extension on Device Linearity of AlGaN/GaN HEMTs in Ka-band

前瞻半導體研究所

氮化鎵、高電子遷移率電晶體、非合金化金屬延伸、線性度、Ka頻段、GaN、HEMT、Non-alloyed metal extension、Linearity、Ka-band

Low-Temperature PVD-Grown AlN Buffer Layer for High-Power AlGaN/GaN HEMTs on Si Substrates

國際半導體產業學院

氮化鋁鎵/氮化鎵高電子遷移率電晶體、氮化鋁緩衝層、物理氣相沉積法、矽上氮化鎵、功率應用、AlGaN/GaN HEMT、AlN buffer layer、Physical Vapor Deposition、GaN-on-Si、Power electronics

Suppression of Melt-Back Etching via Dual-Step GaN Regrowth and Surface Conditioning

材料科學與工程學系

選擇性區域磊晶、氮化鎵、有機金屬化學氣相沉積、熔回蝕刻、四甲基氫氧化氨濕蝕刻、Selective Area Growth、GaN、MOCVD、Melt-back etching、TMAH etching

Improvement of RF Performance in AlGaN/GaN HEMTs by Extended Non-Alloyed Metal to Downscale Source–Drain Spacing for Ka-Band Applications

材料科學與工程學系

氮化鋁鎵/氮化鎵、高電子遷移率電晶體、內縮通道、放大器整合、雜音特性、輸出功率特性、AlGaN/GaN、HEMT、Downscaling spacing、Integration of Amplifiers、Noise characteristics、Output power characteristics

Process Optimization and Reliability Analysis of Normally-Off Ferroelectric Charge Trap Gate GaN MIS-HEMT (FEG-HEMT) for High-Power Applications

國際半導體產業學院

氮化鎵異質結構、鐵電閘極介電層、原子層蝕刻、半導體製程、可靠度分析、GaN heterostructure、ferroelectric gate stack、atomic layer etching、semiconductor process、reliability

New Process Development of High Signal-to-Noise Ratio Reflector Plate

工學院專班-半導體材料與製程設備學程

高信噪比、半導體製程設備、快速熱處理、光學反射板、離子輔助真空蒸鍍、光學鍍膜、High signal-to-noise ratio、Semiconductor manufacturing equipment、Rapid thermal processing、Optical reflector plates、Ion-assisted vacuum deposition、Optical coating

Improvement of PR residue clustering into circular sectors During Lithography Production. (Take 200mm Foundry-X as an Example)

工學院專班-半導體材料與製程設備學程

廢光阻殘留、扇形群聚、顯影液、噴塗狀態、PR Residue、PR residue clustering into circular sectors、Developer、Dispense condition

GaN Buffer Design and Graded AlGaN Barrier Epitaxy Engineering for Enhanced Electrical Performance of AlGaN/GaN HEMT

國際半導體產業學院

氮化鎵、氮化鋁鎵、漸進式磊晶、緩衝層設計、寬能隙半導體、複合物半導體、高功率元件、GaN、AlGaN、Graded epitaxy、buffer layer design、wide bandgap、Compound semiconductor、High-power devices

Growth Mechanisms and Electrical Characterization of High-𝜅 Dielectric on 2D Semiconductor Heterostacks

國際半導體產業學院

二維材料、高介電係數氧化層、奈米電子、原子層沉積、轉移特性曲線、掃描式電子顯微鏡、低溫電漿輔助原子層沉積、2D materials、High-k Oxide layer、Nanoelectronics、Atomic layer deposition、Transfer characteristic、Scanning electron microscopy、Low temperature plasma enhanced atomic layer deposition

Performance Enhancement of Gate Stack within FEG MISHEMT via Fluorine Treatment

材料科學與工程學系奈米科技

增強型、介面陷阱、表面鈍化、氟摻雜、可靠度、E-mode、Interface trap、Surface passivation、Fluorinated、Reliability

Wearable Inertial Sensing Network for Precise Assessment of Upper Limb Motor Function and Tremor Severity Scoring System in Parkinson's Disease

國際半導體產業學院・共同指導：溫瓌岸

巴金森氏症、上肢、震顫、統一巴金森氏症量表、穿戴式慣性測量單元、光學捕捉系統、tremor、upper limbs、UPDRS、IMU、ASIC、real-time system

Study of Low Noise and High-Linearity AlGaN/GaN HEMT with Ti/Al/Ti/W Au-free Ohmic Contact

材料科學與工程學系

氮化鎵、高電子遷移率電晶體、非金材料、高頻、低雜訊、GaN、HEMT、Au-free、High frequency、Low noise

Investigation of the High Linearity AlGaN/GaN HEMTs with Γ-Gate Structures for Ka-Band Applications

材料科學與工程學系

5G、氮化鎵、高電子遷移率電晶體、線性度、三階截斷點、Ka頻段、Γ型閘極、低雜訊、無金歐姆接觸、GaN、HEMT、Linearity、OIP3、Ka-band、Γ-gate、low noise、Au-free ohmic contacts

APCVD Silicon Epitaxial Transition Width Process Improvement

工學院專班-半導體材料與製程設備學程

常壓化學氣相沉積、矽磊晶、介面區厚度、自摻雜效應、二步磊晶法、APCVD、Silicon Epitaxy、Transition Width、Auto doping Effect、Two-Step Epitaxial Growth

Improvement of RF and Noise Performance in InAlGaN/GaN HEMTs by 90 nm T-gate for Ka-Band Applications

國際半導體產業學院

氮化鋁銦鎵、高電子遷移率電晶體、T型閘極、高頻、低雜訊、InAlGaN、HEMTs、T gate length、High Frequency、Low noise

High Performance InGaAs Nanosheet MOSFETs for Future CMOS Devices Application

材料科學與工程學系奈米科技

砷化銦鎵、二氧化鉿/氮化鈦閘極堆疊、氮氣遠程電漿法、奈米片金氧半場效電晶體、奈米片通道、臨場式原子層沉積、InGaAs、HfO2/TiN gate stack、Nitrogen remote plasma treatment、Nanosheet MOSFET、Nanosheet channel、in-situ ALD

High Indium Content InGaAs MOSFETs for RF Application

材料科學與工程學系

砷化銦 鎵、高銦含量、金氧半場效電晶體、高頻元件、截止頻率、InGaAs、High indium content、MOSFET、High-frequency、Cut-off frequency

Investigation of AlGaN/GaN MIS_HEMTs with high quality interface for power applications

電子研究所・共同指導：簡昭欣

氮化鎵、三維多閘極、金氧半高電子遷移率電晶體、P型氮化鎵、矽化鑭、GaN、tri-gate、MIS-HEMT、p-type GaN、La-silicate

Occupational Safety and Health Competence Management

工學院專班-產業安全與防災學程・共同指導：于樹偉

職業安全衛生管理、ISO 45001、製程安全職能管理、職能要求矩陣、修正式德菲法、組織職能訓練、Occupational safety and health management、Process safety competence management、Competence requirements matrix、Modified Delphi method、Organizational competence training

Study of AlGaN/GaN HEMTs with Advanced Process Steps for Ka-Band Applications

國際半導體產業學院

氮化鎵高電子遷移率電晶體、高頻、小線寬、鰭式閘極、厚銅連接線、歐姆區域圖形蝕刻、TCAD模擬、gallium nitride、high electron mobility transistor、small gate length、trench-etched gate、thick-copper metallization、ohmic-etching patterns、TCAD simulation

Fabrication and Reliability Characterizations of GaN-HEMT Devices for Power Applications

國際半導體產業學院

鐵電 MIS-HEMT、FEG-HEMT 可靠性、TDDB、NBTI、PBTI、裝置可靠性、HEMT 測試、Ferroelectric MIS-HEMTs、FEG-HEMT reliability、Device reliability、HEMTs testing

Investigation of TaOx/NiO Multilayer-Based Resistive Random-Access Memory Devices

國際半導體產業學院・共同指導：鍾錦翰

電阻式隨機存取式記憶體、氧化鉭、氧化鎳、多級單元儲存、硒化鉍、多層結構、輻射效應、resistive random access memory (RRAM)、tantalum oxide (TaOx)、nickel oxide (NiO)、multi-level cell storage (MLC)、bismuth selenide (Bi2Se3)、multi-layer structure、radiation effect

Impact of Backside Electrode, Local Substrate Removal, and Digital Etching on GaN-on-Si HEMT Device Characteristics

材料科學與工程學系

氮化鎵、高速移動電子電晶體、基板電極、局部移除基板、數位蝕刻、GaN、HEMT、Substrate Voltage、Local Substrate Removal、Digital Etch

Thermal and γ radiation effects on the memristor

國際半導體產業學院・共同指導：張國明

憶阻器、電化學金屬化、熱效應、生產線末端工藝、輻射傳感器應用、Memristor、ECM、thermal effects、BEOL、radiation sensor application

Improve and develop intelligent automation tool to improve operation safety for process equipment - taking semiconductor wet etching and thin film process equipments as an example

工學院專班-產業安全與防災學程

半導體、安全評估、製程設備、自動化、semiconductor、assess safety、process equipment、automation

Study of AlGaN/GaN HEMTs for 5G Transceiver System

電子研究所・共同指導：蘇彬

氮化鎵、高電子遷移率電晶體、第五代行動通訊、收發器系統、功率放大器、低雜訊放大器、GaN、HEMT、5G、Transceiver System、PA、LNA

Use of SiNx Shield to Fabricate Small Gate Length AlGaN /GaN HEMT for Ka-band Applications

國際半導體產業學院

氮化鎵、高電子遷移率電晶體、高頻、氮化矽遮罩、閘極結構、GaN、HEMTs、High Frequency、SiNx Shield、Gate Structure

Optimization of Low Rc Ohmic Contact Using GaN:Si Regrowth by MOCVD

材料科學與工程學系

重度矽參雜氮化鎵、n型氮化鎵歐姆接觸再成長、歐姆接觸、選擇區域磊晶、Heavily-doped GaN:Si、n-GaN ohmic regrowth、Ohmic contact、Selective-area growth

Leakage Current Suppression through Modulating Composition of InAlGaN/GaN HEMTs for RF Applications

材料科學與工程學系奈米科技

氮化鋁銦鎵、高電子遷移率電晶體、成分調整、低漏電流、InAlGaN、HEMTs、compositional modulation、low leakage current

Current Performance and Material Characteristics for InAlGaN/GaN MISHEMT with AlGaN Interlayer Insertion

國際半導體產業學院

氮化銦鋁鎵高電子移導率電晶體、氮化鋁鎵中間層、高電流、漏電、雙異質結構、InAlGaN HEMT、AlGaN interlayer、High current、Leakage、Double heterostructure

Effect of Gamma Irradiation on the Structural, Morphological, and Memristive Properties of CVD Grown WS2 and ReS2

國際半導體產業學院

WS2、ReS2、化學氣相沉積、伽瑪輻照、憶阻器、Chemical vapour deposition、gamma irradiation、memristors

Improvement of Breakdown Voltage on AlGaN/GaN HEMT with AlGaN Back Barrier Layer and Thin Channel Epi Structure by MOCVD for Ka Band Applications

材料科學與工程學系

氮化鎵、雙異質結構高電子遷移率電晶體、氮化鋁鎵後阻擋層、崩潰電壓、通道層優化、有機金屬化學氣相沉積系統、GaN、double heterostructure HEMT、breakdown voltage、AlGaN back barrier、channel optimization、MOCVD

Development of Cobalt-Silicide Process Condition for Enhancing CMOS Performance in Logic Foundry

工學院專班-半導體材料與製程設備學程

鈷尖突入矽、自我對準之矽化物、快速熱退火、鈷矽化物的反應式擴散、二矽化鈷與矽的蕭基接觸、穿隧式非整流接觸、漏電流、Co Spike into Si、SALICIDE、RTA、RTP、Diffusion-Reaction of Cobalt Silicide、Schottky Contact of CoSi2 and Si、Tunneling Unrectified Contact、Current Leakage

High-Frequency Characteristics of Inversion-Mode InGaAs MOSFETs

國際半導體產業學院

高頻、砷化銦鎵、金氧半場效電晶體、鰭式電晶體、反轉式、截止頻率、最大振盪頻率、: High-frequency、InGaAs、MOSFETs、FinFETs、fT、fMAX、inversion-mode

The programming of adding Degassing Hole for Multi-Layer Organic Substrate layout design

工學院專班-半導體材料與製程設備學程

多層有機載板、排氣孔、佈局設計、爆米花效應、訊號完整性、Multi-Layer Organic Substrate、Degassing Hole、Layout、Popcorn Effect、Signal Integrity

Epitaxy (In)AlGaN/GaN HEMT with (Al)GaN/AlN Superlattice Buffer for Electronic Applications

光電學院博士班・共同指導：藍宇彬

金屬有機化學氣相沉積、氮化鋁鎵(銦)/氮化鎵高電子遷移率電晶體、氮化(鋁)鎵/氮化鋁超晶格、二維電子氣、高頻高功率元件、電子阻帳層、MOCVD、(In)AlGaN/GaN HEMT、(Al)GaN/AlN superlattice、electron blocking layer、2DEG、RF device、power device

Study on Ultra-Wide Bandgap Gallium Oxide Enhanced-Mode MOSFET

電子研究所・共同指導：洪瑞華

有機金屬化學氣相沉積、氧化鎵、寬能隙材料、金氧半場效電晶體、增強型電晶體、氧空缺、緩衝層分析、Metal-organic Chemical Vapor Deposition (MOCVD)、Ga2O3、Wide-bandgap material、Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)、Enhanced-mode transistor、Oxygen vacancies、Buffer layer analysis

Improvement Study of RF Performance of GaN HEMT by using Atomic Layer Etching Technique

材料科學與工程學系奈米科技

氮化鎵、接觸電阻、高電子遷移率電晶體、高頻、原子層級蝕刻、GaN、Contact Resistance、HEMTs、High Frequency、Atomic Layer Etching

Performance Study of Different Exercise in Semiconductor Fabrication Plants - A Case Study

工學院專班-產業安全與防災學程

應急演練、災害應變、演習、演練、應變、emergency drill、emergency response、drill、exercise

Passivation Engineering for Ultra-Thin AlGaN Barrier E-mode GaN Power Devices with Recess-Free Fabrication

材料科學與工程學系

增強型、極薄阻障層、鐵電性、電荷捕捉、鈍化、E-mode、Ultra-thin barrier、Ferroelectric、Charge trap、Passivation

Evaluation of OPC level offload from ARF-DRY to ARF-IMM with NEW Numerical aperture

工學院半導體材料與製程設備學程

漏光、孔徑大小、照明係、照明係極化、光阻、sidelobe、numerical aperture、illumination、polarization、resist material

Exploring the Effects of In-plane Field on the Application of Physically Unclonable Functionality in a Z-type Spin-orbit Torque Device

工學院半導體材料與製程設備學程・共同指導：楊朝堯

自旋軌道矩、隨機性、憶阻性、中間態、物理不可複製函數、Spin orbit torque、Stochasticity、Memristivity、Intermediate states、PUF

Growth and characterization of InAlGaN Back-Barrier for InAlGaN heterostructure

越南境外碩士專班

氮化銦鋁鎵、氮化鎵、通過有機金屬化學氣相沉積、Gallium nitride、InAlGaN、MOCVD、HEMTs、2DEG

AlGaN/GaN HEMT with Small Gate Length by Two Step Photolithography for Ka-band Applications

國際半導體產業學院

氮化鎵、高電子遷移率電晶體、高頻、元件製程、閘極結構、GaN、HEMT、High Frequency、Device Process、Gate Structure

Study of Ti/Al/Ni/Ti Au-Free Ohmic Contacts of AlGaN/GaN HEMTs for Ka-Band Applications

材料科學與工程學系奈米科技碩博士班

氮化鎵、高電子遷移率電晶體、無金、圖形蝕刻、高頻、GaN、HEMT、Au-Free、Patterned Ohmic recess、High Frequency

Double Field Plate Optimization and Power Performance Improvement of D-mode GaN HEMT by Using Quaternary InAlGaN Barrier

國際半導體產業學院

空乏型、高電子遷移率電晶體、場校電板、氮化銦鋁鎵、高崩潰電壓、D-mode、HEMTs、Field Plate、InAlGaN、high breakdown voltage

A Systematic Approach for Enhanced Electrical Performance of Normally-Off GaN MIS-HEMT with Ferroelectric Charge Trap Gate (FEG-HEMT)

材料科學與工程學系所

氮化鋁鎵/氮化鎵異質結構、高電子遷移率電晶體、功率元件、二維電子氣、半導體製程、可靠度分析、AlGaN/GaN heterostructure、HEMT、2DEG、High power device、Semiconductor processing、Reliability

Development of Gallium Nitride High Electron Mobility Transistor for Millimeter-Wave Applications

材料科學與工程學系所

氮化鋁鎵/氮化鎵異質結構、氮化鋁(銦、鎵)/氮化鎵異質結構、高電子遷移率電晶體、二維電子氣、高頻率高功率元件、AlGaN/GaN heterostructure、Al(In、Ga)N/GaN heterostructure、HEMT、2DEG、High frequency high power device

High Performance InGaAs FinFET with High Indium Content for RF Application

材料科學與工程學系所

砷化鎵銦、鰭式場效電晶體、高銦含量、FinFETs、InGaAs、high In content

Study of Different Ohmic Etching Patterns on AlGaN/GaN HEMTs RF Performance in Ka-Band

國際半導體產業學院

圖形蝕刻、高頻、高電子遷移率電晶體、歐姆接觸、氮化鎵、GaN、Ohmic Contact、HEMTs、High Frequency、Patterned Etching

Implementation of Hydrogen-free SiO2 Deposition by PECVD with Tetraisocyanatesilane (TICS) for Fabrication Process of ESL-type IGZO TFT

國際半導體產業學院

四異氰酸基矽烷、ESL 型、電漿增強化學氣相沉積、氧化物半導體、薄膜電晶體、Tetraisocyanatesilane、ESL-type、PECVD、IGZO、TFT

Improvement Study of Noise and Output Power of GaN HEMT with Thick Cu-Interconnection for Satellite-Communicated System Applications

電子研究所・共同指導：洪瑞華

氮化鎵、高電子遷移率電晶體、厚銅導線、雜音特性、輸出功率特性、衛星通訊系統、GaN、HEMT、Thick copper interconnection、Noise characteristics、Output power characteristics、Satellite communication system

Growth of AlGaN/GaN HEMTs on Silicon: a Study of Superlattice Buffer and Silicon-on-Insulator Substrate

材料科學與工程學系所

有機金屬化學氣相沉積、氮化鋁/氮化鎵超晶格、絕緣體上矽、氮化鎵應力、插入損耗、動態導通電阻、膝節電壓、斷態漏電流、截止頻率、MOCVD、AlN/GaN superlattice、silicon-on-insulator、GaN stress、insertion loss、dynamic on-resistance、knee voltage、off-state leakage current、cutoff frequency

Electrical Characteristics of InGaAs Gate-All-Around Nanowire MOSFETs Utilizing in-situ ALD Grown HfO2/TiN Gate Stack

國際半導體產業學院

砷化銦鎵、二氧化鉿/氮化鈦閘極堆疊、環繞式閘極場效電晶體、奈米線通道、臨場式原子層沉積、正偏壓溫度不穩定性測試、InGaAs、HfO2/TiN gate stack、GAAFET、nanowire channel、in-situ ALD、PBTI

E-mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack with Fluorinated HfO2 as Charge Trapping Layer

國際半導體產業學院

增強型、高電子遷移率電晶體、鐵電性、電荷捕捉、氟化、E-mode、HEMT、Ferroelectric、Charge trap、Fluorinated

Selective Area Growth of 200nm GaN pattern on Si(100)

材料科學與工程學系奈米科技碩博士班

氮化鎵、選擇性磊晶、磊晶、GaN、selective area growth、epitaxy

Design, Optimization, and Reliability Study of GaN-based on Si Electronic Devices for High Power Applications

國際半導體產業學院

氮化鎵、功率元件、金屬-絕緣體-半導體高電子遷移率半導體、蕭基二極體、氮化矽鈍化層、動態電阻、珈碼射線、總游離劑量效應、位移損害效應、PHITS模擬、Gallium Nitride (GaN)、power device、MISHEMT、Schottky Barrier Diode、SiNx passivation、dynamic on-resistance、gamma ray、Total Ionizing Dose、Displacement Damage effect、PHITS simulation

Forty-Five Degree InGaAs FinFET for RF Application

材料科學與工程學系所・共同指導：張立

砷化鎵銦、鰭式場效電晶體、高頻率原件、截止頻率、45度砷化鎵銦、InGa0.53As0.47、FinFETs、RF device、cut-off frequency、45-degree InGaAs

Growth of InAlGaN/GaN Heterostructures and Evaluation of the AlN Ferroelectricity Grown by MOCVD

材料科學與工程學系所

有機金屬化學氣相沉積、氮化銦鋁鎵/氮化鎵異質結構、氮化鋁、MOCVD、InAlGaN/GaN Heterostructures、AlN

High Frequency Gate Recessed Enhancement-mode GaN HEMTs Fabricated by Oxygen-based Digital Etching

國際半導體產業學院

氮化鎵、數位蝕刻、高電子遷移率電晶體、增強型、閘極掘入式、GaN、Digital etching、HEMT、Enhancement-mode、Gate recessed

Electrical Characterization of D-Mode Multi-finger AlGaN/GaN MIS-HEMTs

工學院半導體材料與製程設備學程

指叉型佈局、氮化鎵、氮化鋁鎵、高電子遷移率電晶體、功率元件、Multi-finger layout、GaN、AlGaN、HEMT、Power device

Improved high frequency performance of InAlGaN/GaN HEMT with ultrathin barrier and in-situ SiN passivation

國際半導體產業學院

氮化銦鋁鎵、高電子遷移率電晶體、超薄阻障層、原生氮化矽、截止頻率、最大振盪頻率、InAlGaN/GaN、HEMT、ultrathin barrier、in-situ SiN、fT/ fMAX

The Effects of the Barrier Thickness of AlGaN/GaN HEMTs for High Frequency High Power Applications

國際半導體產業學院

氮化鎵、薄氮化鋁鎵層、閘極微縮、高電子遷移率電晶體、短通道效應、GaN、HEMT、scaling gate、short channel effect、thin AlGaN barrier

E-mode GaN MIS-HEMT with Lanthanum-Doped Hf0.5Zr0.5O2 Ferroelectric Gate Stack

材料科學與工程學系所

氮化鎵、氮化鋁鎵、氧化鉿鋯、鑭摻雜、成核層、Gallium Nitride、Aluminum Gallium Nitride、Hafnium Zirconium Oxide、Lanthanum Doping、Seeding Layer

Influence of Interface Quality, Multi-Gate Configurations and Ferroelectric Gate Stack on the High-Frequency Characteristics of InGaAs MOSFETs

國際半導體產業學院

高頻、砷化銦鎵、金氧半場效電晶體、鮨式電晶體、納米線、量子限制效應、體反轉效應、截止頻率、最大震盪頻率、鐵電材料、TCAD、High-frequency、InGaAs、MOSFETs、FinFETs、Nanowire、Quantum confinement effect、Volume inversion effect、fT、fMAX、Ferroelectric materials

Different numerical aperture increase productivity of exposure machines

工學院半導體材料與製程設備學程

曝光機、數值孔徑、顯影、exposure scanner、numerical aperture、develop

The internal structure of a specific package used to dissipate heat from a power management IC

工學院半導體材料與製程設備學程

封裝、田口法、散熱、Package、Taguchi method、dissipate heat

Improvement of ferroelectric propertyby CeOx capping on Y-doped HfO2

國際半導體產業學院

鐵電材料、二氧化鉿、氧化鈰、鐵電電容器、氧空缺、ferroelectric material、HfO2、CeOx、ferroelectric capacitor、oxygen vacancy

Growth and Characterization of Al(Ga,In)N/GaN Heterostructures by MOCVD for High Electron Mobility Transistor Applications

材料科學與工程學系所

金屬有機化學氣相沉積、氮化鋁(銦、鎵)/氮化鎵異質結構、高電子遷移率電晶體、原位生長氮化矽、二維電子氣、高頻率高功率元件、MOCVD、Al(In、Ga)N/GaN heterostructure、HEMT、in-situ SiNx、2DEG、RF power device

Fabrication and Characterization of InGaAs FinFETs and GAAFETs for Logic Device Applications

國際半導體產業學院

砷化銦鎵、氮氣遠程電漿法、鰭式閘極場效電晶體、環繞式閘極場效電晶體、量子侷限效應、體反轉效應、InGaAs、Nitrogen remote plasma treatment、FinFETs、GAAFETs、Quantum confinement effect、Volume inversion effect

Selective Area Growth of GaN as light doping drain into Si MOSFET for using MOCVD for heterogeneous integration

材料科學與工程學系所

選擇性區域磊晶、氮化鎵、有機金屬化學氣相沉積、矽金氧半場效電晶體、矽射頻元件、Selective area growth、GaN、MOCVD、Si MOSFET、Si RF FinFET

Study of High Output Power with Low Noise Γ-Gate AlGaN/GaN HEMT for Ka-band Application

材料科學與工程學系所

三五族半導體、氮化鋁鎵/氮化鎵高電子遷移率電晶體、低雜訊、高功率輸出、Γ型閘極、Ka波段、III-V materials、AlGaN/GaN HENTs、low noise、high output power、Γ-gate、Ka-band application

High-performance AlGaN/GaN Ladder-shape Hybrid Anode Schottky Barrier Diode

材料科學與工程學系所

氮化鎵、氮化鋁鎵、階梯式陽極、混和陽極、蕭基二極體、GaN、AlGaN、ladder-shape anode、hybrid ande、Schottky barrier diode

Scaling of Selective Area Growth of GaN on Si (100) Technology for RF FinFET Application

材料科學與工程學系所

選擇性區域磊晶、氮化鎵、微縮技術、有機金屬化學氣相沉 積、金氧半場效電晶體、selective area growth、GaN、scaling、MOCVD、MOSFET

RF Linearity Improvement of AlGaN/GaN HEMTs by Optimizing Device Structure for Ka-Band Applications

國際半導體產業學院

氮化鎵、氮化鋁鎵、高電子遷移率電晶體、線性度、高頻、AlGaN、GaN、HEMTs、Linearity、Ka-band

Low-resistance Ohmic contact by Complexes of Ti/SiNx reaction and CF4 Surface Plasma treatment by ICP for improving GaN HEMT devices performance

國際半導體產業學院

氮化鎵、歐姆接、低電阻、電漿處理、氮化矽、GaN、Ohmic contact、Low resistance、plasma treatment、SiNx

Breakdown mechanism of ferroelectric Al0.78Sc0.22N films

國際半導體產業學院・共同指導：鍾添淦

鐵電材料、崩壞機制、氮缺陷、氮化鋁鈧、蕭特基障高、Ferroelectric material、breakdown mechanism、nitrogen vacancy、AlScN、Schottky barrier

Formation of ohmic contacts with low contact resistance and smoother surface using digital etching on AlGaN/GaN HEMTs

影像與生醫光電研究所・共同指導：藍宇彬

氮化鎵、高電子遷移率電晶體、蝕刻、歐姆接觸、GaN、HEMT、etch、ohmic contact

Growth Mechanism of Selective Area Growth GaN

材料科學與工程學系所

氮化鎵、選擇性區域成長、矽(100)、有機金屬化學氣相沉積法、閃鋅礦結構、GaN、Selective Area Growth、Si (100)、MOCVD、Zincblende

Growth and Characterization of different buffer layer for AlGaN/GaN HEMT RF application

工學院半導體材料與製程設備學程

氮化鎵、氮化鋁鎵、超晶格、氮化鎵摻雜碳、二維電子氣、有機金屬化學氣相沉積、矽基板、誘捕效應、gallium nitride、aluminum gallium nitride、superlattice、gallium nitride doped carbon、two-dimensional electron gas、metal-organic chemical vapor deposition、silicon substrate、RF performance、trapping effect

Study of the delayer method for copper interconnect in IC die

理學院應用科技學程

銅導線、去層技術、研磨、Die、Copper interconnect、Delayer

Study of Improvement on the Management of Environmental Aspects in the TFT-LCD Industry

工學院產業安全與防災學程

ISO 14001:2015、環境管理系統、環境考量面、environmental management system、environmental Aspects

Study on the establish of guildeline for business continuity planning (BCP) general rule to COVID-19

工學院產業安全與防災學程

新型冠狀病毒、營運持續管理、營運持續計畫、COVID-19、Business Continuity Management (BCM)、Business continuity planning (BCP)

Research on the Method of Increasing the Output Rate of the thin film by Increasing the Speed of the Robotic Arm in the Sputtering System

工學院半導體材料與製程設備學程

濺鍍設備、機械手臂、傳送速度、Sputtering、Robot、Transmission speed

High In Content InGaAs FinFET for Future RF Application

材料科學與工程學系所

砷化鎵銦、鰭式場效電晶體、高銦含量、InGaAs、FinFET、high In content

Study of Copper-Metallized Interconnects on III-V HEMTs for mm-Wave Applications

材料科學與工程學系所

氮化鎵高電子遷移率電晶體、砷化銦鎵變晶型高電子遷移率電晶體、毫米波、銅金屬連接導線、功率放大器、GaN HEMT、InGaAs MHEMT、mm-Wave、Copper Interconnect、Power amplifier

Optimization of ohmic contact resistance by regrowing n-GaN and Cl2 plasma surface treatment on AlGaN/GaN HEMT

材料科學與工程學系所

歐姆接觸、氮化鎵、重新成長、ohmic contact、GaN、regrow、HEMT

RF Power Performance Improvement of AlGaN/GaN HEMTs by applying Tall Gate Stem for Ka-Band Applications

電子研究所・共同指導：施敏

高閘極結構、氮化鋁鎵/氮化鎵、高電子遷移率電晶體、高頻、高功率、RF、Power Performance、AlGaN/GaN、HEMT、Tall Gate Stem、Ka-Band

Charge Trapping Layer Optimization and Field Plate Engineering in E-mode GaN MIS-HEMT with Ferroelectric Gate Stack

材料科學與工程學系所

氮化鎵、功率元件、增強型、鐵電材料、場效電板、高介電常數介電層、氮參雜、電荷儲存層、GaN、power transistor、E-mode、ferroelectric、field plate、high-k dielectric、nitrogen incorporation、charge trapping layer

Enhanced Electrical Properties of Double Layer Channel IZO/IGZO Thin Film Transistor Fabricated by AP-PECVD

國際半導體產業學院・共同指導：張國明

薄膜電晶體、雙通道層、銦鋅氧、銦鎵鋅氧、大氣常壓電漿輔助化學氣相沉積、Thin Film Transistor、Double Layer Channel、IZO、IGZO、AP-PECVD

Electrical Characterization of GaN-based HEMTs Under Ultraviolet Illumination

材料科學與工程學系所・共同指導：陳坤明

氮化鎵、高電子遷移率電晶體、紫外光、脈衝電流-電壓、低頻雜訊、高頻參數、缺陷捕捉效應、光電子、Gallium Nitride、High Electron Mobility Transistors、Ulrtaviolet、Pulsed current-voltage、Low-frequency noise、High-frequency、Charge trapping、optoelectronic

Electrical Characterization of Silicon-based RF and Power Transistors With Different Layout Geometries

材料科學與工程學系所・共同指導：陳坤明

橫向擴散金氧半場效電晶體、鰭狀電晶體、薄膜場效電晶體、汲極延伸、射頻、LDMOS、FinFET、TFT、Drain-Extended、Radio-Frequency

TFT-LCD Data Line Bridge Design for Laser Repair to Increase Yield and Productivity

工學院半導體材料與製程設備學程

薄膜電晶體、陣列檢測、雷射修補、缺陷分析、暗點化、臨界電壓、Thin Film Transistor、Array Test、Laser Repair、Defect Analysis、Threshold Voltage

Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

照明與能源光電研究所・共同指導：馬哲申

氮化鎵、增強型元件、功率元件、高電子遷移率電晶體、超薄阻障層、GaN、Enhanced-mode、power device、HEMT、ultra-thin barrier

Study of Surface Passivation on GaN HEMT for High Frequency Application

國際半導體產業學院

氮化鎵、高頻元件、表面鈍化層、電漿預處理、GaN、Radio frequency device、Surface passivation、Plasma pretreatment

Growth and Characterization of In-situ SiN as Dielectric and Surface Passivation for InAlGaN/GaN HEMT

工學院半導體材料與製程設備學程

氮化銦鋁鎵、氮化鎵、二維電子氣、原生氮化矽、InAlGaN、GaN、2DEG、in-situ SiN

Study of GaN HEMT with Thick Copper Metallization for Millimeter Wave Applications

電子研究所・共同指導：施敏

氮化鎵、高頻功率元件、厚銅金屬化製程、閘極掘入、共平面波導、GaN、High frequency power device、Thick copper metallization、Gate recess、Coplanar waveguide

Selective Lateral Area Growth for Integration Wide Bandgap GaN as Drain into CMOS-compatible SOI Substrate

國際半導體產業學院

選擇性成長、氮化鎵、互補式金屬氧化物矽半導體場效電晶體、Selective Area Growth、GaN Drain、CMOS Compatible

A novel design architecture for III-V based Nanowire TFET for performance enhancement

材料科學與工程學系所

穿隧電晶體、導通電流、模擬、奈米線、三五族材料、砷化銦/銻化鎵、Tunneling FET、ON-Current、Simulation、Nanowire、III-V material、InAs/GaSb

A study on classification of hazardous areas and selection of explosion-proof electrical equipment for high pressure hydrogen storage area -an example of high-tech industry factory

工學院產業安全與防災學程

危險區域劃分、防爆電氣、HazOp、ALOHA、classification of hazardous area、explosion-proof electrical equipment

Study of Improving Etching Uniformity in High Aspect Ratio Silicon Etching Process

工學院半導體材料與製程設備學程・共同指導：張立

矽蝕刻、均勻度改善、Silicon Etching、Uniformity Improvement

Fabrication of GaN Power Transistor with Wet Etching and AlN Regrowth on Gate Region

材料科學與工程學系所

高電子遷移率電晶體、三五族半導體、功率元件、氮化鎵、和氮化鋁镓、濕式蝕刻、增強型元件、常關型元件、鐵電材料、氮化鋁、HEMT、2DEG、Wet etching、E-mode、Gate recessed、AlGaN/GaN、Power application、Regrowth AlN、Normally-off

High Performance AlGaN/GaN-On-Si Lateral Schottky Barrier Diodes with Dual Anode Recess and Double Anode Field Plate

工學院半導體材料與製程設備學程

蕭基能障二極體、掘入、閘極邊緣終端、四甲基氫氧化銨、電場板、schottky barrier diode、recess、gate edge termination、TMAH、field plate

Growth and Crystal Structure Control of III-V Heterostructure Nanowires on Si (111) Substrate by MOCVD

材料科學與工程學系所

金屬有機化學氣相沉積、InAs-InSb 異質、自催化、纖鋅礦、晶體結構、透射電子顯微鏡、MOCVD、InAs-InSb Heterostructure、Self-catalyzed、Wurtzite、crystal structure、TEM

Fabrication and Characterization of AlGaN/GaN High Electron Mobility Transistors

材料科學與工程學系所

氮化鎵、高電子遷移率元件、高功率、低雜訊、高頻、GaN、HEMT、High Power、Low Noise、High Frequency

Failure Mode Analysis and Improvement of Nitrogen Gas Purifier System in a Semiconductor Foundry

工學院產業安全與防災學程

純化器、氮氣、失效模式、氣體純度、Purification、Nitrogen、FMEA、Gas purity

Fabrication and Characterization of Enhancement-mode GaN Power Transistors Using Negative Charge Engineering

材料科學與工程學系所

氮化鎵、功率元件、增強型、常關、負電荷工程、氟離子、鐵電材料、GaN、Power transistor、Enhancement-mode、Normally-off、Negative charge engineering、Fluorine ion、Ferroelectric

Carbon Footprint Study of Liquid Crystal Display Backlight Module by Degreasing Wastewater Treatment

工學院產業安全與防災學程

碳足跡、靈敏度分析、加藥分析、碳排放、Carbon footprint、Sensitivity analysis、Dosing analysis、Carbon emissions

Study on Construction and Application of Contractor Electronic Management System- an Example of TFT-LCD Industry

工學院產業安全與防災學程

承攬商網站、承攬管理、保險展延、工作時數、光電產業、electronic system、contract management、insurance extension、working hours、optoelectronic industry

Improvement of the addressing fail rate on SEM Through Six Sigma

工學院半導體材料與製程設備學程

掃描式電子顯微鏡、六標準差、關鍵尺寸、Scanning Electron Microscope、Six Sigma、Critical Dimension、DMAIC

Dependence of Electrical Characteristics on MoS2 Synthesis Method

材料科學與工程學系奈米科技碩博士班

二硫化鉬、合成法、MoS2、synthesis method

MOCVD growth of high-quality Sb-based epilayers on GaAs substrates for TFET applications

材料科學與工程學系所

有機化學氣相沉積系統、高品質銻化物磊晶層、砷化鎵基板、穿隧式場效電晶體、MOCVD、Metalorganic vapour-phase epitaxy、High-quality Sb-based epilayers、GaAs substrates、TFET applications

MOCVD INTERFACIAL MISFIT GROWTH TECHNIQUE AND QUALITY IMPROVEMENT OF INGASB EPILAYER FOR CMOS APPLICATIONS

國際半導體產業學院

MOCVD、XRD、AFM、CMOS device application、rapid thermal annealing、Focus Ion Beam

High Performance AlGaN/GaN-On-Si Lateral Schottky Barrier Diodes with Two-Step Gated Anode

光電系統研究所・共同指導：馬哲申

階梯式陽極、蕭基二極體、氮化鋁鎵、氮化鎵、三五族半導體、複合物半導體、高功率元件、低漏電流、高崩潰電壓、低開路電壓、水平式、寬能隙、Two-Step Gated Anode、Schottky Barrier Diodes、AlGaN、GaN、III-V Semiconductor、Compound Semiconductor、High Power、Low Leakage Current、High Breakdown Voltage、Low Turn-on Voltage、Lateral、Wide Bandgap

Study of AlGaN/GaN HEMTs with Short Gate Length by Two Steps Photolithography for High Frequency Applications

照明與能源光電研究所・共同指導：藍宇彬

氮化鋁鎵/氮化鎵、高電子遷移率電晶體、小線寬、高頻、均勻性、功率密度、AlGaN/GaN、HEMT、Short gate length、High frequency、Uniformity、Power density

Study eductor plating by using Taguchi Method

工學院半導體材料與製程設備學程

田口計劃法、電鍍、沖流、DOE、plating、eductor

Selective Area Growth for Integration Wide-Gap GaN on CMOS Compatible Si(100) Substrate by MOCVD

國際半導體產業學院

氮化鎵、選擇性成長、有機金屬化學氣相沉積法、GaN、Selective area growth、MOCVD

Growth and Characterization of InAlGaN/GaN Power HEMT for High Frequency Application

材料科學與工程學系所

磊晶、氮化銦鋁鎵、高電子遷移率電晶體、高頻、氮化鎵、InAlGaN、GaN、HEMT、High Frequency

Linearity Improvement of High Power AlGaN/GaN HEMTs for Ka-band Application

材料科學與工程學系所

氮化鎵、線性度、功率元件、AlGaN/GaN HEMTs、Ka-band、Linearity Improvement、High Power Application

High Performance In0.53Ga0.47As 3D MOSFETs for Next-Generation CMOS Devices

照明與能源光電研究所・共同指導：馬哲申

砷化鎵銦、鰭式場效電晶體、全包覆式閘極場效電晶體、遠程電漿處理法、InGaAs、FinFETs、GAA-FETs、High-k dielectrics、Passivation Effect

Negative Capacitance InGaAs FinFETs with Ferroelectric Hafnium Zirconium Oxide for Ultra Low Power Applications

電子研究所・共同指導：郭治群

砷化鎵銦、鐵電、氧化鋯鉿、負電容、鰭式場效電晶體、InGaAs、ferroelectric、HZO、negative capacitive、NC-FinFETs

Growth and Characterization of III-V Heterostructure Nanowires on Si (111) Substrate by MOCVD for Low Power Applications

材料科學與工程學系所

機化學氣相沉積系統、MOCVD、Nanowires、InAs/GaSb、TEM、SEM

MOCVD Growth of GaSb Material on Si Substrate for CMOS Application

材料科學與工程學系所

有機化學氣相沉積系統、銻化鎵、互補金屬氧化物半導體、MOCVD、Gallium antimony、complementary metal oxide semiconductor

Enhancement-Mode GaN Power HEMTs for High Frequency Applications

材料科學與工程學系所

高頻、增強型、氮化鎵、高電子遷移率電晶體、E-mode、GaN、HEMT、High Frequency

Study of copper metallization with Ti/WNx/Ti as diffusion barrier for high power AlGaN/GaN HEMTs

光電系統研究所・共同指導：馬哲申

銅製程、氮化鎢、氮化鎵、copper metallization、WNx、GaN

Study of Tri-Gate InxGa1-xAs HEMTs for Low-Noise Amplifier Applications

材料科學與工程學系所

砷化鎵、砷化銦鎵、低雜訊放大器、三閘極立體結構、高電子遷移率電晶體、GaAs、InGaAs、low noise amplifier、tri-gate、HEMTs

Ohmic-Recessed AlGaN/GaN HEMTs with Neutral Beam Etch Technology for High Frequency Power Applications

國際半導體產業學院

氮化鎵、高電子遷移率電晶體、中性粒子束蝕刻、歐姆接觸最佳化、GaN、HEMT、Neutral beam etch、contact resistance optimize

Investigation of the Parasitic RF Loss at the AlN/Si Interface for the GaN-based HEMT Structure on Silicon

國際半導體產業學院

氮化鋁、氮化鎵、高電子遷移率電晶體、射頻損耗、矽、共平面波導、反轉通道、壓電性拉應力、預核層、AlN、GaN、High electron mobility transistors、RF loss、Silicon、Coplanar waveguides、Inversion channel、Piezoelectric tensor、Nucleation layer

The Growth of Ultrathin Al(Ga,In)N/AlN/GaN Heterostructures by MOCVD for High Electron Mobility Transistor Applications

材料科學與工程學系所

有機金屬化學气相沉積、氮化鎵在矽基板上、氮化鎵在藍寶石基板上、三五族、高電子移動率電晶體、閘極漏電、長晶溫度、炭缺陷、MOCVD、GaN on Si、GaN on Sapphire、III-Nitride、HEMT、Gate leakage、Growth temperature、Carbon defect

Study of the Device Properties of AlGaN/GaN HEMTs on Si substrate with Different Carbon-doped Buffer Structures

工學院半導體材料與製程設備學程

氮化鋁鎵、氮化鎵、碳摻雜、動態導通電阻、AlGaN、GaN、HEMT、Dynamic RON、Carbon doping

A Study on Performance Improvement of InGaAs nMOSFETs for Future High Speed and Low Power Applications

電子研究所・共同指導：施敏

三五族半導體、邏輯元件、鰭式場效電晶體、電漿處理、高介電常數閘極絕緣層、砷化銦鎵金氧半場效電晶體、III-V material、logic device、FinFET、plasma treatment、High-k dielectric、InGaAs MOSFET

Study of p-GaN MOS-HEMT by Self-Aligned Etching for High Power Applications

國際半導體產業學院

氮化鎵、金氧半高電子遷移率電晶體、增強型、p型氮化鎵、GaN、MOS-HEMT、E-mode、p-GaN

Fabrication and Characterization of GaN-based Semiconductor Devices for High-Power and Microwave Power Applications

材料科學與工程學系所

氮化鎵、高電子遷移率電晶體、閘極絕緣層、電漿輔助原子沉積系統、低壓化學氣相沉積系統、功率元件、GaN、HEMT、gate insulator、PEALD、LPCVD、Power Device

A Study of Semiconductor Ozone Process Gas and Residual Gas Leakage Prevention

工學院產業安全與防災學程

半導體、臭氧、風險評估、本質較安全設計、失效模式與影響分析、氣體偵測器、Semiconductor、O3、Risk assess、Failure mode and effects analysis、Inherently safer design、Gas detector

Fabrication and Characterization of GaN-based High-Electron-Mobility Transistors for High-Frequency Applications

材料科學與工程學系所

氮化鎵、高電子遷移率電晶體、功率放大器、高頻、GaN、HEMT、Power Amplifier、High frequency

Advanced Process Technology Development of InAs Channel HEMTs for High-Speed and Low-Power Logic Applications

電子研究所・共同指導：施敏

砷化銦、高速電子遷移率電晶體、高速低功耗邏輯應用、InAs、HEMTs、High-speed and low power logic applications

Evaluation of Gate Reliability on Charge-trapping Gate Stack In E-mode GaN MIS-HEMT

工學院半導體材料與製程設備學程

氮化鎵、電荷儲存、GaN、E-mode HEMT

study of thin and high-quality GaAs buffer on patterned Si(001) substrate by metal-organic chemical vapor deposition

材料科學與工程學系所

磊晶、砷化鎵、圖案化矽基板、有機金屬化學氣象沉積法、溫度效應、五三比、epitaxy、GaAs、patterned Si substrate、MOCVD、temperature effect、V/III ratio

Emergency Response Equipment Selection Basis Example of the Dangerous Workplace of I TFT-LCD Factory

工學院產業安全與防災學程

危險性工作場所、緊急應變器材、風險評估、危害鑑別、Hazardous Workplace.、Emergency equipments.、Risk assessment.、Hazard identification.

Effect of surface passivation by two-step low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cells

材料科學與工程學系所

表面鈍化、多晶、低壓、太陽能電池、Surface passivation、Multi-crystalline、Low pressure、Solar cell.

A Study of Ion Implanter Implanting Angle Calibration

工學院半導體材料與製程設備學程

離子植入、熱波、角度鑑別率、ion implanting、thermal wave、angle calibration

Establishment of the electronic management and safety risk analysis for gas cylinder exchange check list - in semiconductor foundry application

工學院產業安全與防災學程

鋼瓶、氣櫃、檢核表、電子化管理、Cylinder、Gas cabinet、Check list、electronic management

Large Signal Modeling of AlGaN/GaN HEMTs and Design of 50W Power Amplifier at 3.5Ghz

照明與能源光電研究所・共同指導：馬哲申

氮化鎵、大訊號模型、功率放大器、GaN、Angelov-GaN model、power amplifer、S band

The Study of High Current Density GaN MIS-HEMT with SiO2 Gate Insulator

材料科學與工程學系所

氮化鎵、二氧化矽、氧化層、高電流密度、Gallium Nitride、Silicon Dioxide、Oxide、insulator、High current density

Study of Tri-Gate InAs HEMTs for Low-Noise Amplifier Applications

光電系統研究所・共同指導：馬哲申

砷化鎵、高電子遷移率電晶體、三閘極結構、低雜訊放大器、GaAs、HEMTs、Tri-Gate、LNA

Fabrication and Characterization of GaN HEMT Devices with Cu Metallized Interconnects for High Power Electronic Applications

材料科學與工程學系所

氮化鎵、高電子遷移率電晶體、銅、GaN、HEMT、Copper

Study of π-gate InAs HEMT for Logic Application

材料科學與工程學系所

砷化銦、高電子移動率電晶體、邏輯元件、InAs、HEMT、Logic Application

Study of Tri-gate AlGaN/GaN MOS-HEMTs for Power Application

照明與能源光電研究所・共同指導：林建中

高電子遷移率電晶體、三閘極、複合物半導體、金氧半、HEMTs、Tri-gate、Compound Semiconductor、MOS

Friction Interface Endpoint Detection for CMP Application

工學院半導體材料與製程設備學程

化學機械研磨、終點監測、晶圓過磨、摩擦力、Chemical mechanical polishing、in-situ endpoint detection、Friction

Development of an Accelerated Step-Stress Methodology for the Evaluation of the Stability of GaN-on-Si Power MIS-HEMTs

電子研究所・共同指導：施敏

步進式量測、氮化鎵、高功率元件、GaN MIS-HEMTs、step-stress

The Study of Using AlN/Al2O3 Dielectric with Plasma Enhanced Atomic Layer Deposition to Improve MoS2 MOSFET Performance

光電系統研究所・共同指導：馬哲申

二硫化鉬電晶體、電漿增強型原子沉積、介電層沉積、MoS2 FET、PEALD、dielectric deposition

Fabrication and Characterization of GaN on Si HEMT Devices with Backside Si Local Etching to Reduce Leakage Current for High Power Applications

光電系統研究所・共同指導：馬哲申

矽基氮化鎵高電子遷移率電晶體、背向矽基板蝕刻、氧化鋁/銅散熱層、漏電流、GaN-on-Si HEMT、Backside Si substrate etching、AlN/Cu heat dissipation layer、Leakage

High Performance In0.53Ga0.47As 3D MOSFETs Using Plasma Treatment for Low Power High Speed Future Logic Applications

光電系統研究所・共同指導：馬哲申

鰭式場效電晶體、全包覆式閘極場效電晶體、高介電係數閘極介電質氧化物、閘極介電質鈍化效應、閘極介電質成長後電漿處理、InGaAs、FInFET、High-k dielectrics、GAA-FETs、Passivation Effect

Study on Negative Capacitance InGaAs MOSFETs for Sub-20 mV/dec Subthreshold Swing

光電系統研究所・共同指導：馬哲申

砷化銦鎵、氧化鉿鋯、鐵電材料、負電容、陡峭次臨界擺幅、InGaAs、Hf0.5Zr0.5O2、ferroelectric material、negative capacitance、steep subthreshold swing

GaN Selective Epitaxial Growth on Patterned Si(100) Substrate Using MOCVD for Ultra-scaled Hetero-structure FinFET Application

國際半導體產業學院

氮化鎵、選擇性成長、磊晶、三五族化合物半導體、有機金屬化學氣相沉積法、圖案化、矽(100)基板、異質接面、電晶體、GaN、Hetero-Junctions、selective area growth、epitaxy、III-V compound semiconductor、MOCVD、pattern、Si(100) substrate

INVESTIGATION OF METAL GATE STACK FOR POST CMOS LOW POWER HIGH-K/III-V MOS DEVICES APPLICATIONS

材料科學與工程學系所

CMOS、Metal gate stack、III-V、HfO2、Low power consumption appications、Metal work function

Epitaxial growth of Ge on In0.51Ga0.49P/GaAs (100) substrate by ultra-high vacuum chemical vapor deposition

材料科學與工程學系所

磊晶、高品質鍺、砷化銦鎵、p型半導體、Epitaxial growth、InGaP、Ge、UHVCVD、p-channel

Fabrication and Characterization of AlGaN/GaN RF Power MOS-HEMTs

材料科學與工程學系所

氮化鎵、射頻功率、氧化鍶、氮化鋁、高介電常數、高電子遷移率電晶體、GaN、radio-freauency、Cerium oxide、AlN、high-k、HEMT

Investigation on Safety of Steel Structure Removal in High - tech Factory

工學院產業安全與防災學程

鋼構拆除、氧乙炔切割、安全網、安全母索、steel structure removal、oxyacetylene for cutting、safety net、safety cable

MOCVD GROWTH OF ANTIMONIDE-BASED MATERIALS USING INTERFACIAL MISFIT ARRAYS FOR CMOS APPLICATION

材料科學與工程學系所

MOCVD、IMF、InGaSb、Interfacial Misfit Dislocation、Band Offset Parameters、CMOS

Study of Process Development on Exfoliated MoS2 FETs and Device Performance Improvement

材料科學與工程學系所

二硫化鉬、場效電晶體、轉貼法、MoS2、FETs、Exfoliated Process

Large-Signal Modeling of AlGaN/GaN HEMTs for RF and High Power Applications

光電系統研究所・共同指導：馬哲申

氮化鎵、高電子遷移率電晶體、大訊號模型、GaN、HEMT、Large-signal model

Growth of thick GaN film with low dislocation density on Si(111) substrate by inserting LT-AlGaN interlayer and HP-GaN nucleation layer

光電系統研究所・共同指導：馬哲申

低溫氮化鋁鎵、高壓氮化鎵孕核層、氮化鎵、LT-AlGaN、HP-GaN nucleation layer、GaN

Performance Enhancement Technologies for GaN Power Devices

材料科學與工程學系所

氮化鎵、鈍化層、介面分析、高功率元件、GaN、Passivation、Interface analysis、High Power Device

The Study of Damage-free Gate-recessed Normally-off GaN MISHEMTs by Neutral Beam Etching System

光電系統研究所・共同指導：馬哲申

氮化鎵、高電子遷移率高功率電晶體、掘入式閘極、增強型、低損傷中性粒子束蝕刻、高起始電壓低磁滯、GaN-based devices、high-power applications、enhancement-mode high electron mobility transistors、high threshold voltage、gate-recessed、Neutral Beam Etching System

Gate-Recessed Enhancement-Mode AlGaN/GaN HEMTs with Neutral Beam Etch Technology for High Frequency Power Applications

影像與生醫光電研究所・共同指導：馬哲申

高電子遷移率電晶體、掘入式閘極、中性粒子束蝕刻、HEMT、Gate Recess、Neutral Beam Etch

Study of Device Performance with Charge-induced Energy Band Modulation in GaN MIS-HEMTs

電子研究所・共同指導：施敏

氮化鎵、金屬絕緣層半導體高電子遷移率電晶體、氮氧化矽、鐵電材料、能帶調變、GaN、MIS-HEMT、SiON、Ferroelectric、Energy Band Modulation

Design, Simulation and Development of Advanced Gallium Nitride Based High Electron Mobility Transistors for Power Electronic Applications

材料科學與工程學系所

氮化鎵高電子遷移率電晶體、臨界電壓、崩潰電壓、垂直式高電子遷移率電晶體、P型氮化鋁銦、接觸電阻、GaN HEMT、Threshold Voltage、Breakdown Voltage、Vertical HEMT、P-InAlN、Contact Resistance

Study on the Passivation of High-k/In0.53Ga0.47As FinFETs Using In Situ Remote-Plasma Gas Treatment

照明與能源光電研究所・共同指導：馬哲申

鰭式場效電晶體、高介電係數閘極介電質氧化物、閘極介電質鈍化效應、閘極介電質成長後電漿處理、電漿增強型原子層化學氣相沉積系統、InGaAs、FInFET、High-k dielectrics、Passivation Effect、In Situ Post Remote-Plasma treatment

Study of Enhancement Mode AlGaN/GaN MIS-HEMT with La2O3/SiO2 Gate Insulator for High Power Application

材料科學與工程學系所

氮化鎵、增強型、氧化鑭/二氧化矽、GaN、E-mode、La2O3/SiO2

Study of Multilayer TiNi Alloys as Gate Material for InGaAs NMOS Devices

材料科學與工程學系所

NMOS金屬閘極材料、TiNi 合金作為砷化銦鎵、而鈦鎳合金的有效功函數大約是4.62eV、在經過退火後、其平帶能階電壓增加了0.21V (從-0.11到0.1V)、Multilayer TiNi Alloys、Gate Material、InGaAs NMOS Devices

Optimization of Vertical InAs/GaSb Hetero-Junction Tunneling Field-Effect Transistors

電子研究所・共同指導：張俊彥

穿隧電晶體、異質接面、負微分電阻、臨界電壓不均勻性、閘極通道耦合率、費米能階箝制、雙金屬閘極、Tunneling FETs、Hetero-junction、Negative differential resistance、Threshold voltage non-uniformity、Gate to channel coupling ratio、Fermi level pinning、Dual-metal gate

Effect of Additive in Slurry on Chemical Mechanical Polishing for Germanium

工學院半導體材料與製程設備學程

鍺、化學機械研磨研磨液、淺碟型凹陷、添加劑、Germanium、CMP slurry、Dishing defects、Additive

Improvement Study of Chemical Delivery & Process Safety Event Investigation Method

工學院產業安全與防災學程

製程安全事件(故)調查方法、6M 文件證據檢核表、辨識關鍵事件環、AcciMap 事故圖、根本原因分析、安全衛生管理系統、process safety incident (accident) investigation method、6M documentary evidence checklist、key events identification ring、AcciMap、Root cause analysis、safety and health management system

Study of In0.53Ga0.47As MOS Capacitor with La2O3 and HfO2 Composite Oxide

材料科學與工程學系所

氧化鑭、二氧化鉿、金氧半電容器、高介電係數材料、電容等效厚度、等效氧化物厚度、磁滯特性、X射線光電子光譜、電容-電壓曲線、散頻、界面缺陷密度、閘極漏電流、La2O3、HfO2、MOS capacitor、high K material、capacitance equivalent thickness (CET)、equivalent oxide thickness (EOT)、composite dielectric material、hysteresis、XPS spectra、C-V curve、frequency dispersion、interface trap density、gate leakage current

Study of AlGaN/GaN Tri-gate HEMTs for Power Application

照明與能源光電研究所・共同指導：馬哲申

鋁氮化鎵/氮化鎵高電子遷移率電晶體、三閘極、高功率應用、AlGaN/GaN HEMTs、tri-gate、Power Application

Study of Gold-Free Fully Cu-Metallized III-V Solar Cell

照明與能源光電博士學位學程・共同指導：馬哲申

銅、歐姆接觸、三五族太陽能電池、Cu-Metallized、Ohmic contact、III-V Solar Cell

Epitaxial Growth of AlN buffer layer by Metal-Organic Chemical Vapor Deposition for AlGa(In)N/GaN High Electron Mobility Transistor Applications

材料科學與工程學系所

氮化鎵、氮化鋁、高電子遷移率電晶體、GaN、AlN、High electron mobility transistor

High Current and Low Dynamic On Resistance (RON) Enhancement mode GaN MIS-HEMT

材料科學與工程學系所

低動態電阻、增強型、氮化鎵、高電流、Low Dynamic On Resistance、Enhancement mode、GaN、High Current

The boolean algorithm of advanced technology in semicondutor

光電學院光電科技學程・共同指導：馬哲申

布林邏輯演算、boolean algorithm

Study of DC and RF Characteristic Improvements on GaN HEMTs by LPCVD Grown Silicon Nitride Passivation

材料科學與工程學系所

低壓化學氣相沉積、氮化矽、氮化鎵、高電子遷移率電晶體、高頻特性、LPCVD、Silicon Nitride、GaN、HEMT、RF Characteristic

The Study of Process Development on Transition Metal Dichalcognides MoS2 Transistor

材料科學與工程學系所

二維材料、二硫化鉬、電晶體、氬電漿、接觸電阻、傳輸線模型、2D material、MoS2、transistor、Ar plasma、contact resistance、TLM

SiC Backside Via Process for GaN RF Power Device Application

照明與能源光電研究所・共同指導：馬哲申

氮化鎵、碳化矽、背向通孔製程、GaN、SiC、Backside Via

AlGaN/GaN HEMT with 3D Growth Mode GaN Nucleation Layer on Silicon (111) Substrates for High Voltage Applications

照明與能源光電研究所・共同指導：馬哲申

氮化鎵、三五族材料、電晶體、GaN、III-V material、HEMTs

Investigation of Vertical InAs Nanowires Grown on Si (111) Substrate by Two-step Growth Technique

光電系統研究所・共同指導：馬哲申

三五族半導體、砷化銦、奈米線、金屬有機化學氣象沉積、III-V semiconductor、InAs、Nanowire、MOCVD

Fabrication and Characterization of GaN-based Semiconductor Devices on Si Substrates for High-Power Electronic Applications

材料科學與工程學系所

氮化鎵、高電子遷移率電晶體、閘極氧化層、電漿輔助原子沉積系統、閘極掘入、無金製程、GaN、HEMT、gate insulator、PE-ALD、gate recessed、gold free process

Study of the T-shaped Gate Head Dimension Influence for 90nm InAs HEMTs on InP Substrate Using E-beam Lithography

照明與能源光電研究所・共同指導：馬哲申

電子束微影、T型閘極、砷化銦高電子遷移率電晶體、T-shaped Gate、InAs HEMT、E-beam Lithography

Simulation Study of Threshold Voltage of Normally Off AlGaN/GaN MOS-HEMTs

照明與能源光電研究所・共同指導：馬哲申

增強型、高介電質氧化物、金屬絕緣體半導體高電子遷移率電晶體、模擬、normally off、high k oxides、MOS-HEMT、simulation

PASSIVATION OF HIGH-K/III-V INTERFACES FOR POST CMOS APPLICATION

材料科學與工程學系所

MOSCAP、MOSFET、AlN、Al2O3、HfO2

Study of Tri-Gate InAs HEMTs for Low-Power Logic Applications

影像與生醫光電研究所・共同指導：林萬里

三閘極、砷化銦、高電子遷移率電晶體、Tri-Gate、InAs、high electron mobility transistor (HEMT)

The Study of La2O3/SiO2 GaN MIS-HEMT for High Power Application

光電系統研究所・共同指導：馬哲申

氮化鎵金屬-絕緣體-半導體高電子遷移率電晶體、氧化鑭、二氧化矽、高功率元件、GaN MIS-HEMT、La2O3、SiO2、Power device

Improved Linearity in GaN MIS-HEMTs Using La2O3-based stack Gate Dielectric

光電系統研究所・共同指導：馬哲申

氮化鎵、高電子遷移率電晶體、線性度、GaN、MIS-HEMTs、Linearity

InAs Quantum Well MOSFETs Performance Improvemant by Using pre-AlN Passivation Layer and In-Situ PEALD Post Remote Plasma Treatment

影像與生醫光電研究所・共同指導：馬哲申

量子井場效電晶體、高介電係數閘極介電質氧化物、閘極介電質鈍化效應、氮化鋁介面活性層、閘極介電質成長後電漿處理、電漿增強型原子層化學氣相沉積系統、InAs Quantum well MOSFET、High-k dielectrics/III-V materials、PEALD-AlN Interfacial Passivation Layer、Post Remote-Plasma Treatment

Electrical analysis and PBTI reliability of In0.53Ga0.47As MOSFETs with AlN passivation layer and NH3 post remote plasma treatment

電子工程學系 電子研究所・共同指導：黃調元

銦化砷鎵金氧半場效電晶體、氮化鋁鈍化層、遠端電漿表面處理、正偏壓應力可靠度、InGaAs MOSFETs、AlN interfacial passivation layer、in-situ PEALD、PBTI

Study of Anode edge termination for AlGaN/GaN Schottky diode by Silvaco simulation

工學院半導體材料與製程設備學程

氮化鋁鎵、氮化鎵、陽極邊緣效應、蕭特基二極體、電場板、AlGaN、GaN、Anode edge termination、Schottky diode、Field plate

Flip-Chip-On-Board Packaging of GaAs Device on Low-Cost Liquid Crystalline Polymer Substrate for RF Applications

光電系統研究所・共同指導：馬哲申

覆晶封裝、聚合物基板、低成本、射頻、flip-chip、packaging、polymer substrate、LCP、RF

Improved Threshold Voltage Stability of Enhancement-Mode AlGaN/GaN MISHEMTs with Multilayer HfO2/La2O3 Gate Insulator

光電系統研究所・共同指導：馬哲申

氮化鎵、氮化鎵鋁、增強型、高電子遷移率電晶體、閘極嵌入、氧化鉿/氧化鑭、GaN、AlGaN、Enhancement-mode、high electron mobility transistor、gate recess、HfO2/La2O3

Study of Device Linearity Improvement for the AlGaN/GaN HEMTs on Silicon Carbide Substrate by Using Double-Gates Process

材料科學與工程學系所

雙閘極電晶體、氮化鎵電晶體、線性度、Double gate transistor、GaN transitor、Linearity

Effect of the Ga/Sb Treatment on the Growth of GaSb Epitaxy on GaAs Substrate Using Metalorganic Chemical Vapor Deposition

光電系統研究所・共同指導：馬哲申

有機金屬化學氣相沉積、銻化鎵、介面處理、MOCVD、GaSb、Interfacial Treatment

Safety Improvement Measures of Wet Benches in Eight-inch Wafer Fab

工學院產業安全與防災學程

濕式清洗機台、火災、加熱器、消防系統、Wet bench、Fire accidents、Heating systems、Fire protection systems

Evaluation of Enhancement Mode InAs HEMTs for RF and Low-Power Logic Applications Using Non-alloyed Ohmic & Sidewall Etch Process

光電系統研究所・共同指導：馬哲申

化合物半導體、砷化鎵、磷化銦、砷化銦、高頻、非合金歐姆接觸、compound semiconductor、GaAs、InP、InAs、RF、non-alloyed ohmic

Flip-Chip Packaging Design for Performance Enhancement of AlGaN/GaN High-Electron-Mobility Transistors

材料科學與工程學系所

氮化鋁鎵/氮化鎵、高電子遷移率電晶體、覆晶封裝、AlGaN/GaN、HEMT、Flip-Chip Packaging

Safty Risk Assessment of Liquid Nitrogen Lorry Loading-Take a High-tech Factory in Taichung Application

工學院產業安全與防災學程

液氮、氮氣、槽車、灌裝安全、nitrogen、lorry、loading safety

Study of Cu Barrier Layers for Gate Metal on GaN High Electron Mobility Transistors Application

工學院半導體材料與製程設備學程

氮化鎵、銅閘極、阻障層、氮化鈦、氮化鎢、GaN、Cu gate、Barrier Layers、TiN、WNx

Study of Tri-Gate In0.6Ga0.4As mHEMTs for Low-Power Logic Applications

照明與能源光電研究所・共同指導：馬哲申

砷化銦鎵、三閘極、邏輯應用、InGaAs、tri-Gate、logic applications

High Power AlGaN/GaN HEMT Device Fabrication by Stepper

工學院半導體材料與製程設備學程

氮化鎵、高功率元件、GaN、High power device

Performance Study of the State Production Safety Standardization System of China Based on a Case Study of a Taiwan-funded Optical Plant in Mainland China

工學院產業安全與防災學程

安全生產標準化、冶金等工貿企業安全生產標準化基本規範、safety standardization

Growth and Characterization of III-Nitride on Si Substrates for High-Power Electronic Applications

材料科學與工程學系所

磊晶成長、氮化鎵、矽基板、功率電子、崩潰電壓、雙異質界面、高電子遷移率電晶體、epitaxy growth、GaN、Si substrate、power electronic、breakdown voltage、double heterostructure、HEMT

Investigations of Efficiency Improvement on InGaP/GaAs/Ge Triple-Junction Solar Cell

材料科學與工程學系所

三五族磷化銦鎵/砷化鎵/鍺太陽能電池、高效率、硫化鎘量子點、抗反射層、氧化鋅奈米管、正電極、遮蔽率、串聯電阻、InGaP/GaAs/Ge solar cell、High efficiency、CdS quantum dots、antireflection (AR) coating、ZnO nanotube、front grid pattern、shadowing factor、series resistance

Epitaxial Growth of Germanium on In0.5Ga0.5P/GaAs substrates by UHVCVD

材料科學與工程學系所

鍺、磷化銦鎵、超高真空化學氣相沉積系統、Ge、InGaP、UHVCVD

Study of RF Transmission Line Loss in III-Nitride on Si Substrates by Coplanar Waveguides

材料科學與工程學系所

氮化鎵、三族氮化物、矽基板、射頻傳輸線損耗、共平面波導、GaN、III-Nitride、Silicon substrate、RF Transmission Line Loss、Coplanar Waveguides

Study of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Low-Power Logic Applications

材料科學與工程學系所

非退火式歐姆接觸、增強型砷化銦元件、砷化銦通道高電子遷移率電晶體、Non-annealed ohmic contacts、Enhancement-mode InAs devices、InAs-channel HEMTs

Study of 1nm-oxide-equivalent-thickness La2O3 and HfO2 Multilayer Composite Oxides on In0.53Ga0.47As for MOS Capacitor Application

光電系統研究所・共同指導：馬哲申

氧化鑭、氧化鉿、砷化銦鎵、等效厚度、La2O3、HfO2、InGaAs、EOT

The Growth of AlN/GaN Epitaxial Structure for High Electron Mobility Transistor by Metal Organic Chemical Vapor Deposition

照明與能源光電研究所・共同指導：馬哲申

氮化鋁、氮化鎵、有機金屬化學氣相沉積、高電子遷移率電晶體、磊晶、AlN、GaN、HEMT、MOCVD、Epitaxy

Improved Passivation of GaN MIS-HEMT for Power Application

工學院半導體材料與製程設備學程

電源功率、閘極漏電流、崩潰電壓、GaN、MIS-HEMT

The Study of AlGaN/GaN HEMT Power Device Characteristics and Reliability Improvement Using Field Plate Approach

光電系統研究所・共同指導：馬哲申

氮化鋁鎵/氮化鎵高功率元件、可靠度、場效電板、AlGaN/GaN power device、reliability、field-plate

Study of DC and RF Characteristic Improvements on GaN HEMTs by AlN Passivation Layer and Surface Treatment

照明與能源光電研究所・共同指導：馬哲申

氮化鋁鈍化層、表面處理、AlN Passivation Layer、Surface Treatment

Study of hydrogenated amorphous carbon film reactor in-situ clean recipe optimization

工學院半導體材料與製程設備學程

含氫非晶質碳薄膜、電將化學氣相沉積法、清潔速率、hydrogenated amorphous carbon films、plasma enhancedchemical vapor depsotion、cleaning rate

The Study of La2O3/HfO2 GaN MOS-HEMT for High Power Application

光電系統研究所・共同指導：馬哲申

氮化鎵高電子遷移率電晶體、氧化鉿、氧化鑭、閘極氧化層、GaN MOS-HEMT、HfO2、La2O3、Gate dielectric

The assessment for wastewater treatment of backside grinder and the wastewater recycling

工學院產業安全與防災學程

晶背研磨、backside grinder

Broadband Anti-reflection Sub-wavelength Structure of InGaP/InGaAs/Ge Triple-junction Solar Cell Based on Graded SiNx by Using Au Nanoparticles as Etching Mask

光電系統研究所・共同指導：馬哲申

三五族太陽能電池、漸變、次波長結構、電漿耦合蝕刻、抗反射層、InGaP/InGaAs/Ge Triple-junction Solar Cell、Graded、Sub-wavelength Strucutre、ICP-RIE、Anti-reflection Layer

Effects of the composition and thickness of the nonlinear metamorphic InxGa1-xAs buffer on the grown quality of the In0.5Ga0.5As film on GaAs substrate by MOCVD

光電系統研究所・共同指導：馬哲申

薄膜磊晶、砷化銦鎵、緩衝層、有機化學氣相沉積法、砷化鎵、應變、InGaAs、MOCVD、buffer layer、surface、quality、MOSCAP

Device Performance Enhancement of AlGaN/GaN MIS-HEMT Using High-k Materials for Surface Passivation and Gate Insulator

影像與生醫光電研究所・共同指導：林萬里

金絕半高電子遷移率電晶體、氮化鋁鎵/氮化鎵、氧化鋁/氮化鋁絕緣層、二氧化鈰、矽基板、MIS-HEMT、AlGaN/GaN、Al2O3/AlN insulator、CeO2、Si substrate

Small-Signal and Large-Signal Models of AlGaN/GaN HEMTs

照明與能源光電研究所・共同指導：林萬里

氮化鎵、高電子遷移率電晶體、小訊號模型、大訊號模型、GaN、HEMT、Small-signal model、Large-signal model

The Growth of AlGaN/GaN Heterostructures on SiC Substrate by MOCVD for High Electron Mobility Transistor Applications

材料科學與工程學系所

金屬有機化學氣相沉積、磊晶、氮化鋁鎵高電子遷移率電晶體、MOCVD、Epitaxy、AlGaN/GaN HEMT

Advanced InAs Quantum Well MOSFET: Device Bandgap Engineering and Hysteresis Effect

材料科學與工程學系所

先進金氧半場效電晶體、砷化銦量子井金氧半場效電晶體、元件能隙工程、遲滯效應、高介電常數閘極介電質/金屬閘極、閥值電壓不穩定性、Advanced MOSFET、InAs Quantum Well MOSFET、Bandgap Engineering、Hysteresis Effect、High-k Gate Dielectric/Metal Gate、Threshold Voltage Instability

Simulation study of InAlAs/InGaAs Pseudomorphic High Electron MobilityTransistors

影像與生醫光電研究所・共同指導：馬哲申

模擬、砷化銦鋁/砷化銦鎵、假型高電子遷移率電晶體、優化、扭結效應、衝擊離子化、Simulation、InAlAs/InGaAs、PHEMT、Optimization、Kink effect、impact ionization

Epitaxy Growth of high resistivity GaN-based buffer on Silicon (111) substrates

光電系統研究所・共同指導：馬哲申

氮化鎵、有機金屬化學氣相沉積、GaN、MOCVD

Study of GaAs nucleation on Si substrate by Metal-organic Chemical Vapor Deposition

材料科學與工程學系所

砷化鎵於矽基板上、機金屬化學氣相沉積法、磊晶、GaAs on Si、MOCVD growth、Epitaxy

Reducing Leakage Current and Suppressing Current Slump of Si3N4 AlGaN/GaN MISHEMTs by Insertion of AlN Interfacial Passivation Layer

照明與能源光電研究所・共同指導：馬哲申

氮化鎵、氮化鋁、高電子遷移率電晶體、金屬絕緣層半導體高電子遷移率電晶體、崩潰電壓、電流潰散效應、漏電流、氮化鋁鎵/氮化鎵、GaN、AlN、HEMT、MISHEMT、Breakdown voltage、Current Slump、Leakage Current、AlGaN/GaN

The study of high-k/III-V MOS capacitor

材料科學與工程學系所

高介電係數、砷化銦鎵、銻化銦、金氧半電容器、High-k、InGaAs、InSb、MOS capacitor

Study of au free, fully Cu-metallized InGaP/InGaAs/Ge triple-junction solar cell

光電系統研究所・共同指導：馬哲申

銅、歐姆接觸、太陽能電池、Cu、ohmic contact、solar cell

High Performance AlGaN/GaN Schottky Barrier Diodes with Al2O3/Si3N4 Passivation

工學院半導體材料與製程設備學程

氮化鎵、蕭基二極體、嵌入式陽極、氧化鋁、GaN、Schottky barrier didoe、recess anode、Al2O3

The Study of Contact Metals for High Power AlGaN/GaN High Electron Mobility Transistors Application

電子工程學系 電子研究所・共同指導：施敏

氮化鎵、高功率、高電子遷移率電晶體、歐姆接觸、蕭基接觸、GaN、high power、HEMT、Ohmic contact、Schottky contact

Orientation Dependent Characteristics of III-V QWMOSFET for Low Power High Frequency Applications

電子工程學系 電子研究所・共同指導：施敏

晶向、金屬氧化物半導體、Orientation Dependent、QWMOSFET

Effect of Physical Properties of Polishing Pad on Copper Chemical Mechanical Polishing Process

工學院半導體材料與製程設備學程

化學機械研磨、CMP

Improved Threshold Voltage Stability of Enhancement-Mode GaN MISHEMT with Al2O3/AlN Gate Dielectric

照明與能源光電研究所・共同指導：馬哲申

氮化鎵、金氧半高電子遷移率電晶體、增強型、氮化鋁、氧化鋁、起始電壓、GaN、MISHEMT、Enhancement-mode、AlN、Al2O3、Threshold voltage

Low Current Collapse GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer

電子工程學系 電子研究所・共同指導：張俊彥

氮化鎵、高電子遷移率電晶體、氮化矽、氮化鋁、鈍化層、GaN、HEMT、SiN、AlN、passivation

Study of High Speed and Low Voltage Depletion and Enhancement Mode InAs Channel HEMTs for RF and Logic Applications

電子工程學系 電子研究所・共同指導：張俊彥

砷化銦、增強型、高電子遷移率電晶體、InAs、E-mode、HEMTs

The Study of Simulation InAlAs/InAs/InGaAs System for InP High Electron Mobility Transistor

影像與生醫光電研究所・共同指導：馬哲申

高電子遷移率電晶體、假型高電子遷移率電晶體、砷化銦鎵、HEMT、pHEMT、InGaAs

Backside Via Hole Process for Grounding GaAs HEMTs by Using ICP Dry Etching

材料科學與工程學系所

背面製程、砷化鎵高電子遷移率電晶體、導通孔、Backside process、Via Hole、GaAs HEMT、ICP etching

Failure, Reliability and Risk study of DUPS (diesel UPS) in the Semiconductor Factory

工學院產業安全與防災學程

失效率、可靠度、風險、柴油不斷電系統、妥善率、DUPS、Reliability、Risk、Failure、MTBF

A Study of validity to reduce chemical accidents in laboratories for chemical engineering students

工學院產業安全與防災學程

化學實驗室、行為安全觀察、安全行為、意外事故、Chemistry laboratory、Behavior based safety observation、Safety behavior、Accident

Using Positive Activities to Enhance the Environment, Safety and Health Issue in Semiconductor Industry

工學院產業安全與防災學程・共同指導：徐一量

安全文化、激勵活動、環安衛管理、Safety Culture、Positive Activities、ESH Management

Micro-Patterned Low Temperature Ge on Si substrate for High Quality GaAs Growth

照明與能源光電研究所・共同指導：馬哲申

鍺、超高真空化學氣象磊晶、微溝槽、Germanium、UHVCVD、micro trench

tudies of copper inhibitor protecting mechanism against copper corrosion in chemical mechanical polishing

工學院半導體材料與製程設備學程

銅化學研磨、苯並三唑、有機物殘留、Cu CMP、BTA、organics residual

Growth of AlGaN/GaN HEMT Structure on Sapphire Substrate for High Power Applications by MOCVD

照明與能源光電研究所・共同指導：馬哲申

有機金屬化學氣相沉積、氮化鋁鎵/氮化鎵、高電子遷移率電晶體、藍寶石基板、MOCVD、AlGaN/GaN、HEMT、Sapphire substrate

The Growth of InAlN/AlN/GaN Heterostructures by MOCVD for High Electron Mobility Transistor Applications

影像與生醫光電研究所・共同指導：馬哲申

氮化鎵、有機氣體化學氣相沉積、氮化銦鋁、高電子遷移率電晶體、GaN、MOCVD、InAlN、HEMT

The Study of InGaP Material Growth on GaAs and Ge/Si Substrates for III-V Solar Cells Application

照明與能源光電研究所・共同指導：馬哲申

磷化銦鎵、砷化鎵、鍺/矽基板、有機金屬化學氣相沉積法、InGaP、GaAs、Ge/Si substrate、MOCVD

Improvement of Breakdown Voltage and Device Reliability of AlGaN/GaN HEMTs with Integrated Slant-Gate

照明與能源光電研究所・共同指導：馬哲申

氮化镓、高電子遷移率電晶體、功率元件、崩潰電壓、傾斜型閘極、模擬、GaN、HEMT、power device、breakdown voltage、slant-gate、simulation

Effects of LT-AlGaN Interlayers on Properties of Thick GaN Growth on Si

光電系統研究所・共同指導：馬哲申

氮化鎵在矽基板上成長、最佳化低溫氮化鋁鎵插入層成長條件、有機金屬化學氣相沉積法、無裂痕氮化鎵薄膜、GaN on Si、LT-AlGaN optimization、MOCVD、Crack-free GaN

The Study of High-k Composite Dielectric for InGaAs MOS Device Applications

光電系統研究所・共同指導：馬哲申

高介電常數、砷化銦鎵、High-k、InGaAs

The Study of Gold-free Metallization for AlGaN/GaN High Electron Mobility Transistors

照明與能源光電研究所・共同指導：馬哲申

無金製成、氮化鎵、高電子遷移率電晶體、Au-free metallization、GaN、HEMT

High Performance AlGaN/GaN Schottky Barrier Diode with Slanted Anode Structure

材料科學與工程學系所

氮化鎵、蕭基二極體、傾斜式陽極、氧化鋁、GaN、Schottky barrier didoe、Slanted anode、Al2O3

The investigation on the growth of SiC thin film by Thermal Chemical Vapor Deposition

光電系統研究所・共同指導：馬哲申

碳化矽、碳化矽/氮化鋁/藍寶石基板、氮化鎵/碳化矽/藍寶石基板、氮化鎵/碳化矽/氮化鋁/矽、熱裂解化學沉積法、雙相成長、應力、SiC、SiC/ AlN/ sapphire、GaN/ SiC/ sapphire、GaN/ SiC/ AlN/ Si、Thermal Chemical Vapor Deposition、twin domain、stress

Sb-Based N- and P-Channel Heterostructure Field-Effect Transistors

材料科學與工程學系所

高頻、低功率、銻化物、Sb、low-power、n-channel、p-channel

The security assessment for silane trailer supply

工學院產業安全與防災學程・共同指導：謝明宏

矽甲烷、TFT-LCD、槽車作業、槽車安全、防災策略、Silane、trailer operation、trailer safety、strategy of disaster prevention

Solar power plant equipment machines fire and explosion safety management- SiH4 process system as an example

工學院產業安全與防災學程

太陽能光電廠設備機台、防火防爆安全管理、Solar power plant equipment machines、fire and explosion safety management

Improve the recycle rate on stripper recycle system in the liquid crystal display industry

工學院產業安全與防災學程

去光阻液、回收系統、化學供應系統、Stripper、Recycle System、Chemical Supply System

Study of Double Heterojunction Pseudomorphic InP/InGaAs/InP p-channel QWFET for III-V Complementary Circuit Applications

照明與能源光電研究所・共同指導：馬哲申

磷化銦、砷化鎵銦、P通道量子井場效電晶體、三五族互補電路的應用、InP、InGaAs、p-channel QWFET、III-V Complementary Circuit Applications

Safety risk assessment of the movement of the semiconductor Equipments

工學院產業安全與防災學程

設備搬運及運送安全、風險評估、失誤模式與效能分析、微影設備、movement、semiconductor equipment、FMEA、Litho equipment

Metal Organic Chemical Vapor Deposition Growth of

材料科學與工程學系所

氣相沉積、氮化銦鎵、氮化銦、矽基板、InGaN、InAlN、Si Substrates

Facility Outsourcing Job Management & Safety Risk Analysis for Gas/Chemical System in IC Foundry

工學院產業安全與防災學程

外包管理、廠務外包作業管理系統、失誤模式與效能分析、Outsourcing Management、Outsourcing Operation Management System、Failure Mode and Effects Analysis

Liquid Chemical Lorry Loading/Unloading Risk Analysis and Optimized Safety Control - Semiconductor Fab Application

工學院產業安全與防災學程

化學品、槽車、灌裝安全、chemical、lorry、loading/unloading safety

Substrate Misorientation Effects in Tunnel Junction Layers and GaAs Epitaxy Grown on Ge/Si Substrate for Low-cost High-efficiency III-V Multijunction Solar Cell Applications

材料科學與工程學系所

偏角度基板、穿隧層、砷化鎵、三五族多接面太陽能電池、misorientation substrate、tunnel junction layer、gallium arsenic、III-V multijunction solar cell

The Study of Copper Metallization for AlGaN/GaN High Electron Mobility Transistors

電子工程學系 電子研究所・共同指導：施敏

氮化鎵、銅、鈦鋁鎢、歐姆接觸、GaN、cu、copper、TiAlW、ohmic contact

Study of Atomic-Layer-Epitaxy Controlled MOCVD GaAs Epi-layer on Ge Substrate

工學院半導體材料與製程設備學程

原子層磊晶法、砷化鎵、鍺基板、ALE、GaAs、Ge substrate

The Research of Ge Grown on Si by Using Two-step SixGe1-x Buffer Layers

照明與能源光電研究所・共同指導：馬哲申

鍺、矽鍺、矽、超高真空化學氣相沉積、Ge、SiGe、Si、UHVCVD

Ohmic and Schottky Contact Material for Cu-based GaN Device

照明與能源光電研究所・共同指導：馬哲申

氮化鎵、銅製程、歐姆接觸、GaN、Cu、Ohmic contact

Fabrication of AlGaN/GaN HEMTs with Slant Field Plates Using Deep-UV Lithography

工學院半導體材料與製程設備學程

氮化鎵、高電子遷移率電晶體、T型閘極、電場板、GaN、HEMT、T-shaped gate、Field plate

Study of AlGaN/GaN MOS-HEMTs on Silicon Substrate with Al2O3 Gate Insulator for Device Linearity Improvement

材料科學與工程學系所

金氧半高速電子遷移率電晶體、氧化鋁鎵/氮化鎵、線性度、高速電子遷移率電晶體、氧化鋁、矽基板、MOS-HEMT、AlGaN/GaN、linearity、HEMT、A2O3、Si substrate

Copper-Metallized Interconnects on GaN High Electron Mobility Transistors

照明與能源光電研究所・共同指導：馬哲申

氮化鎵高電子遷移率電晶體、銅金屬化導線(空橋)、擴散阻擋層、鉑、氮化鎢、GaN HEMT、Copper-metallized interconnects(airbridge)、Diffusion barrier layer、Pt、WNx

Growth of GaAs epitaxy on Ge/Si substrate using graded-temperature arsenic prelayer for III-V solar cells application

材料科學與工程學系所

砷化鎵/鍺、反相邊界、反相疇、砷界面層、GaAs/Ge、antiphase boundaries、antiphase domains、As prelayer

Study of Device Linearity Improvement for the AlGaN/GaN HEMTs on Silicon Substrate by Using Multi-Gate Process

材料科學與工程學系所

氮化鎵、三階交叉點、多閘極、八十奈米閘極線寬、lGaN/GaN High Electron Mobility Transistors、GaN、80 nm gate length、multi-gate、third order intermodulation point

Study of Atomic Layer Deposition Al2O3/InGaAs, InAs Interfaces for MOSFET Application

材料科學與工程學系所

金氧半電晶體、原子層、沉積氧化鋁、砷化銦鎵、砷化銦、Atomic Layer Deposition、Al2O3/InGaAs、Interfaces、MOSFET

The Improvement of GaN LED light extraction

工學院半導體材料與製程設備學程

側邊蝕刻、晶格、藍寶石、雷切、幾何形狀、光萃取、GaN、LED、Sapphire、SWE、light extraction、Laser scribe

Improve the Precision of Film Deposition by Shadow Mask

工學院半導體材料與製程設備學程

硬式罩幕、Shadow mask

Study of High Quality Ge Epitaxial Film on GaAs Substrate

材料科學與工程學系所

磊晶、鍺、砷化鎵、Ge、GaAs、UHVCVD

Study of LED Epitaxy Structure by Self-Developed MOCVD

平面顯示技術碩士學位學程

有機金屬化學氣相沉積、發光二極體、LED、MOCVD

The Risk Evaluation and Improvement on TFT LCD Manufacturing Equipments

工學院產業安全與防災學程

風險評估、機台安全、Risk Evaluation、Tool Safety