張俊彥

Electrical Reliability Investigation of Stacked HfZrO Ferroelectric Memory and Field Effect Transistor

照明與能源光電研究所・共同指導：藍宇彬、鄭淳護

鐵電電容、鐵電電晶體、氧化鋯鉿、負電容效應、定電壓應力、時間依賴性介電崩潰、Ferroelectric Capacitor、Ferroelectric Transistor、HfZrO、Negative Capacitance Effect、Constant Voltage Stress、Time Dependent Dielectric Breakdown

Impact of Ferroelectric HfZrOx Gate-Stack Scaling on N-type and P-type Negative Capacitance Transistors

光電系統研究所・共同指導：鄭淳護、林建中

負電容電晶體、氧化鉿鋯、鐵電材料、negative capacitance、HfZrO、ferroelectric material

Ferroelectric Negative Capacitance Transistor Using Ultrathin Hafnium Aluminum Oxide for Advanced Low-Power CMOS Application

電子物理系所・共同指導：鄭淳護、周武清

鐵電、負電容電晶體、超薄、氧化鋁鉿、漏電流、次臨界擺幅、多域、輻射、摻雜、金屬閘極應力、Ferroelectric、Negative Capacitance Transistor、Ultrathin、Hafnium Aluminum Oxide、Leakage、Subthreshold Swing、Multi-domain、Radiation、Dopant、Metal Gate Stress

Advanced Negative Capacitance Transistor for the Applications of Low-Power IoT and Sub-5nm CMOS node

電子研究所・共同指導：鄭淳護、簡昭欣

鐵電、負電容場效電晶體、次臨界擺幅、氧化鉿鋁、無摻雜鐵電薄膜、應力誘發相轉變、缺陷鈍化、Ferroelectric、Negative-Capacitance FETs、Subthreshold swing、HfAlO、Dopant-free ferroelectric film、Stress-induced phase transition、Defect passivation

Investigation on Improved Polarization Characteristics of Ferroelectric Hafnium Oxide Using a Buffered Zirconium Oxide

光電系統研究所・共同指導：林建中

氧化鋯、緩衝層、鐵電、氧化鉿、極化特性、Zirconium Oxide、Buffer Oxide、Ferroelectric、Hafnium Oxide、Polarization Characteristics

Investigation of HfAlOx Ferroelectric Memory Using Strained Gate Technology

光電系統研究所・共同指導：林建中

鐵電、氧化鉿鋁、閘極應變、記憶體、負電容效應、ferroelectric、HfAlO、strained-gate、memory、negative capacitance effect

Investigation on Ferroelectric Characterization of Hafnium-Oxide-Based Ferroelectric Memories with Remote Plasma Treatments

照明與能源光電研究所・共同指導：藍宇彬

遠程電漿、氧化鉿基鐵電材料、鐵電記憶體、remote plasma、hafnium-oxide-based ferroelectric material、ferroelectric memories

Investigation on Stress Instability of Junctionless FET with Vertical Stacked Multi-Channels

電子物理系所・共同指導：林烜輝

無接面場效電晶體、多層堆疊、可靠度、junctionless FET、multi-stacked、reliability

Investigation on Ferroelectric Mechanism of Dopant-Free Hafnium Oxide Induced by Mechanical Stress

電子研究所・共同指導：鄭淳護

無摻雜氧化鉿薄膜、氧化鉿鐵電材料、負電容、Dopant-free HfO2、Hafnium Oxide Ferroelectric Material、Negative Capacitance Effect

Investigation of Steep-Slope Negative Capacitance Transistors Using Ferroelectric Hafnium Aluminum Oxides

電子研究所・共同指導：鄭淳護

負電容電晶體、鐵電材料、熱穩定性、Negative capacitance FET、Ferroelectric material、Thermal stability

The Study of Device Performance and Dynamic Characteristic Improvement for GaN-on-Si High Power Devices

電子物理系所・共同指導：郭浩中

矽基板氮化鎵、功率元件、動態特性、表面處理、GaN-on-Si、Power device、Dynamic characteristics、Surface treartment

Research of High Color-Conversion Efficiency GaN-based LED with Quantum Dots

光電工程研究所・共同指導：郭浩中

發光二極體、色轉換效率、量子點、LED、Color conversion efficiency、Quantum dots

Study on Electrical and Chemical Characteristics of Indium Gallium Arsenide MOSFET and FinFET with Atomic-Layer-Deposited Al2O3 Gate Dielectrics

電子研究所・共同指導：簡昭欣

金氧半場效電晶體、魚鰭式電晶體、原子層沉積、砷化銦鎵、MOSFET、FinFET、ALD、InGaAs

Simulation of RF Characteristics and Circuit Performance of Ferroelectric Negative Capacitance FET

電子物理系所・共同指導：林烜輝

鐵電材料、負電容電晶體、截止頻率、最大震盪頻率、電壓轉移特性、傳播延遲、Ferroelectric material、Negative-capacitance FET、Cut-off frequency、Maximum-oscillation frequency、Voltage transfer characteristic、Propagation delay

An experimental study of transient behavior in the novel negative capacitance gated versatile memory

電子研究所

負電容、記憶體、暫態的、negative capacitance、memory、transient

Using HfAlO Ferroelectrics with Strained-gate to Realize the Negative Capacitance FETs for Ultra-low Power Applications

影像與生醫光電研究所・共同指導：林建中

鐵電、氧化鉿鋁、閘極應變、低功率、ferroelectric、HfAlO、strained-gate、low power

Strained-gate Engineering and Fluorine Plasma Treatment for Improving the Performance of Ferroelectric ZrO2 1T-DRAM

光電系統研究所・共同指導：林建中

鐵電、氧化鋯、鐵電記憶體、應變閘極、氟電漿處理、ferro、ZrO2、FRAM、Strained-gate、Fluorine plasma treatment

Strained-Gate with Negative Capacitance Ferroelectric Dielectric Layer for Energy Efficient Memories and Sub-10nm Transistors

電子研究所・共同指導：鄭淳護

鐵電、負電容、氧化鋯鉿、非揮發性、記憶體、ferroelectric、negative capacitance、HfZrO、nonvolatile、memory

Investigation on fin sidewall process and related electrical characteristics of 30-nm fin width InGaAs FinFET

光電系統研究所・共同指導：林建中

鰭式電晶體、砷化銦鎵、FinFET、InGaAs

Highly 3D Scalable 60-nm Short-Channel Junctionless FETs with Multi-P/N Structured Channels

電子研究所

無接面通道場效電晶體、junctionless FET

Scalable Hafnium-oxide-based dielectrics for the applications of Si, InAs and InGaAs MOS Capacitors

光電工程研究所・共同指導：許根玉

金氧半電容、砷化銦、砷化鎵銦、氧化鉿、MOSCAP、InAs、InGaAs、Hafnium oxide

Optimization of Vertical InAs/GaSb Hetero-Junction Tunneling Field-Effect Transistors

電子研究所・共同指導：張翼

穿隧電晶體、異質接面、負微分電阻、臨界電壓不均勻性、閘極通道耦合率、費米能階箝制、雙金屬閘極、Tunneling FETs、Hetero-junction、Negative differential resistance、Threshold voltage non-uniformity、Gate to channel coupling ratio、Fermi level pinning、Dual-metal gate

Multi-Facet InGaN/GaN Microrod and Nanopillar Optoelectronic Devices

電子工程學系 電子研究所

發光二極體、氮化鎵、半極性面、多重量子井、太陽能電池、奈米柱、微米柱、Light emitting diode、gallium nitride、semipolar、multiple quantum wells.、solar cell、nanorod、microrod

Investigation of Electrical Characteristics on 100-nm InGaAs Channel FinFET Using InAlAs Back Barrier and Al2O3 Gate Dielectric

光電系統研究所・共同指導：林建中

砷化銦鎵、鰭式電晶體、氧化鋁、InGaAs、FinFET、Al2O3

Investigation of InGaZnO Thin Film Transistors and Stacked Silicon Controlled Rectifier for Liquid Crystal Display Application

電子工程學系 電子研究所

銦鎵鋅氧化物、氧化鈦、薄膜電晶體、矽控整流器、靜電放電、IGZO、TiOx、TFT、SCR、ESD

Study of Hybrid P/N Channel with Back-Gate Junctionless Field-Effect Transistor

電子工程學系 電子研究所・共同指導：林鴻志、黃調元

背向閘極、混合式、無接面、場效電晶體、back-gate、hybrid、junctionless、FET

The System Reliability Extending for Multi-Level per Cell NAND Flash Memory

電子工程學系 電子研究所

快閃記憶體、多階儲存單元、系統可靠度、System Reliability、Multi-Level per Cell、NAND Flash Memory

Advance Error Handling for Deep Sub-20nm NAND Flash Memory

電子工程學系 電子研究所

快閃記憶體、數位訊號處理、錯誤更正碼、NAND Flash Memory、DSP、ECC

Characteristic of Magnetized Metal-Insulator-Metal Structure with Graphene Electrodes

影像與生醫光電研究所・共同指導：謝建文

磁化、MIM結構、石墨烯、Magnetized、MIM structure、Graphene

Adaptive Triggered Voltage (Vt1) and Holding Voltage (Vh) Stacked SCRs for ESD Protection in High Voltage Power Clamp Circuit

電子工程學系 電子研究所

矽控整流器、靜電放電防護、可調式觸發電壓、SCR、ESD、Adaptive Triggered

Magnetoelectro-Coupling Characteristics of PN Diode Structure Embedded with FePt Nano-magnets

電子工程學系 電子研究所

奈米磁鐵、磁性材料、PN接面二極體、內建磁場、殘存磁化量、磁退火製程、nano-magnets FePt、PN Diode、magnetoelectro-coupling、remanent magnetization、magnetization annealing process

Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems

光電系統研究所・共同指導：林建中

氧化銦鎵鋅、氧化銦鋅、薄膜電晶體、InGaZnO、InZnO

A Five-Forces Framework Analysis on the Key Turning Points for Medical Intelligent Robot Industry Development in Taiwan

管理學院高階主管管理碩士學程・共同指導：丁承

五力分析、智慧醫療、機器人、外骨骼動力服、智慧機器人、復健醫療、互動型機器人、Five-Forces Framework Analysis、Medical Intelligence、Robot、Powered exoskeleton、Intelligent robot、Physical Medicine and Rehabilitation、Interactive robot

Study of Novel Nano-Scale Multi-Gate Junctionless Field Effect Transistors

電子工程學系 電子研究所

鰭式場效電晶體、Ω狀閘極、無接面、薄膜電晶體、FinFET、omega-gate structure、junctionless、thin-film transistor

The Study of C-Axis Aligned Crystal InGaZnO Thin Film Transistors

光電系統研究所・共同指導：林建中

氧化銦鎵鋅、薄膜電晶體、IGZO、TFT

Characterization and Electrostatic Discharge Protection Design of High Voltage LDMOS

光電系統研究所・共同指導：林建中

靜電防護、橫向雙擴散之金氧半場效電晶體、ESD、LDMOS

The epitaxial growth and device characteristics of novel InGaN/GaN semipolar nano-pyramid LED for next generation solid-state lighting

光電工程研究所・共同指導：郭浩中

半極性、氮化鎵、氮化銦、磊晶成長、奈米金字塔、發光二極體、Semipolar、GaN、InN、Epitaxial growth、Nano-pyramid、Light emitting diode

Investigation of Metal-Oxide InGaZnO Thin Film Transistors Using Stacked Gate Dielectrics and Dual Channels

電子工程學系 電子研究所

銦鎵鋅氧化物、軟性薄膜電晶體、雙通道層、InGaZnO、Flexible Thin Film Transistor、Dual-Channel layer

Magnetoelectric Coupling Properties of BaSrTiO3 in Metal-Insulator-Metal Structure

照明與能源光電研究所

磁電耦合、鐵白金、金屬-絕緣體-金屬、鈦酸鍶鋇、Magnetoelectric Coupling、FePt、MIM、BTO

Physics, device operation, and circuit application of multi-gate junctionless metal-oxide-semiconductor field-effect-transistors

電子工程學系 電子研究所

三維元件模擬、無接面電晶體、金氧半場效應電晶體、奈米科技、3D Simulation、Junctionless、MOSFET、Nanotechnology

Size-dependence of ZnO quantum dots embedded in SiO2 by magnetron sputtering

電子工程學系 電子研究所

氧化鋅量子點、尺寸效應、量子效應、磁性濺鍍、多層結構、ZnO quantum dot、size-dependence、quantum effect、magnetron sputtering、multilayer structure

Analysis of Data Pattern Dependence on Program Disturbance Characteristics in NAND Flash Memory

電子工程學系 電子研究所・共同指導：白田理一郎

NAND 快閃記憶體、寫入擾動、資料模式、漏電流、NAND Flash Memory、Program Disturbance、Data Pattern、Leakage Current

Low Current Collapse GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer

電子工程學系 電子研究所・共同指導：張翼

氮化鎵、高電子遷移率電晶體、氮化矽、氮化鋁、鈍化層、GaN、HEMT、SiN、AlN、passivation

Characteristic of Magnetized MIM Structure Embedded with Patterned FePt Nano-magnets

照明與能源光電研究所

磁化、崩潰電場、漏電流、magnetization、breakdown field、leakage current

Study of High Speed and Low Voltage Depletion and Enhancement Mode InAs Channel HEMTs for RF and Logic Applications

電子工程學系 電子研究所・共同指導：張翼

砷化銦、增強型、高電子遷移率電晶體、InAs、E-mode、HEMTs

Performance of Vertical Gate-All-Around Si (110) and Si (551) MOSFET on Si(100) Substrate

電子工程學系 電子研究所

環繞式閘極、場效應電晶體、垂直式、奈米線、gate all around、vertical、MOSFET、nanowire、balance

Development of Cost-Effective Transparent Conductive Oxides and Band-Gap Engineering for Photovoltaic Application

電子工程學系 電子研究所

太陽能電池、透明導電氧化物、solar cell、TCO

Gate-All-Around Nano-wire Channel Transistors and Nonvolatile Memory Devices

電子工程學系 電子研究所・共同指導：吳永俊

環繞式閘極、奈米線、薄膜電晶體、多晶矽、奈米點、單一記憶胞二位元儲存、矽-氧化矽-氮化矽-氧化矽-矽、次臨界擺幅、無接面電晶體、Gate-All-Around、Nanowire、Thin Film Transistor、Polycrystalline Silicon (Poly-Si)、Nanocrystal、2-bit/cell、Silicon-Oxide-Nitride-Oxide-Silicon (SONOS)、Subthreshold Swing (SS)、Junctionless Transistor

Fabrication and Characterization of three dimensional Semipolar {10-11} and Nonpolar {10-10} Core-shell InGaN/GaN Mulit-Facet Qunatum Wells Optoelectronics Devices

電子工程學系 電子研究所

氮化銦鎵、多重晶面量子井、發光二極體、InGaN、Mulit-Facet Qunatum Wells、LED

Fabrication and Investigation of Full Color Emission Semipolar InGaN/GaN Nanopyramid Light Emitting Diode

光電工程研究所・共同指導：許根玉

氮化鎵、奈米結構、金字塔、半極化面、全彩、發光二極體、GaN、NanoStructure、Pyramid、Semi-Polar、Full Color、Light Emitting Diodes

Giant Magnetic Field in the Magnetization of Nano-Magnet FePt in MIM Structure Using Al2O3 Dielectrics

電子工程學系 電子研究所

三氧化二鋁、奈米磁鐵FePt、磁化作用、磁退火、Al2O3、nano-magnet FePt、magnetization、magnetic annealing

Morphology, Optical and Electrical Properties of ZnO:Ga Films on Glass Substrates

影像與生醫光電研究所・共同指導：馬哲申

大氣電漿、摻鎵氧化鋅、表面形貌、Atmospheric-pressure Plasma、ZnO:Ga、Morphology

Giant Magnetic Field in the Magnetization of Nano-Magnets FePt in MIM Structure Using HfO2 Dielectrics

電子工程學系 電子研究所

磁場、鐵白金、磁化、二氧化鉿、金屬-絕緣體-金屬、Magnetic field、FePt、Magnetization、HfO2、MIM

Fabrication and Characterization of Pi-Gate Nano-sheet Channel JL TFTs by Oxidation Thinning

電子工程學系 電子研究所・共同指導：鄭晃忠

PI型閘極、無接面薄膜電晶體、junctionless、PI gate、oxidation thinning、Nano-sheet Channel

Development of non-contact bio-potential acquisition system for monitoring electrocardiogram under post-cardiac-surgical rehabilitation

光電系統研究所・共同指導：林伯昰

非接觸式電極、乾電極、長時間心電圖監控、Non-contact electrode、Dry electrode、Long-term ECG monitoring

Fabrication of High Efficiency Near-Ultraviolet Light Emitting Devices

光電工程研究所・共同指導：冉曉雯

近紫外光發光二極體、氮化鎵、氮化鋁鎵銦、垂直式發光二極體、機械式剝離製程、化學氣相沉積系統、Near-UV LEDs、GaN、InAlGaN、Vertical LEDs、Mechanical lift-off、MOCVD

Study of designing a liquid-helium-free cryogenic system for the superconducting magnetization system

工學院加速器光源科技與應用學位學程・共同指導：黃清鄉

超導磁鐵、低溫系統、非液氦、低溫冷凍機、Superconducting Magnet、Cryogenic system、None-Liquid-Helium、Cryocooler