林鴻志

Characterization of Thin-Film Transistors with a Stacked Double-Layer InGaZnO Channel

電子研究所

氧化銦鎵鋅、雙閘極薄膜電晶體、雙層通道、源/汲極工程、金屬/半導體介面、IGZO、double-gated thin-film transistor、double-layered channel、source/drain engineering、metal-semiconductor interface

Correlation between Defects in Grain Boundaries and Reverse Short-channel Effects in Polysilicon Thin-film Transistors

電子研究所

多晶矽、薄膜電晶體、次臨界擺福、空乏區、反向短通道效應、polysilicon、thin-film transistors、subthreshold swing、depletion region、reverse short-channel effects

Study of Sub-100 nm Channel Monolayer MoS2 Transistors with Sb S/D Contacts and Bilayer MoS2 Transistors with Au S/D Contacts Fabricated Using a Metal-Bridging-Free Process

電子研究所

二硫化鉬、二維材料、半金屬、銻、雙層二硫化鉬、電晶體、MoS2、2D materials、Semimetal、Sb (Antimony)、Bilayer MoS2、transistor

A Comparative Study of Directly Grown Bilayer and Transferred Monolayer/Bilayer MoS2 Transistors with Nanometer-Scale Channel Lengths

電子研究所

雙層二硫化鉬、二維材料、短通道電晶體、大面積成長、均勻性、Bilayer Molybdenum Disulfide、Two-dimensional materials、Short-Channel Transistors、Large-area growth、Uniformity

Sub-100 nm Double-Gated IGZO TFTs Fabricated Using a Metal-bridging Free Process and Integrated with Raised Source/Drain Structures

電子研究所

薄膜電晶體、銦鎵鋅氧化物、無金屬橋接製程、高源/汲極、雙閘極、thin-film transistors、IGZO、metal-bridging free、raised source-drain、double-gated

Fabrication and Characterization of Nanoscale-Channel Double-Gated ITO TFTs with Integrated Metal-Bridging-Free and Raised Source/Drain Structures

電子研究所

薄膜電晶體、銦錫氧化物、高源/汲極、雙閘極、無金屬橋接、Thin-Film Transistor、Indium Tin Oxide、Raised Source/Drain、Double Gate、Metal-Bridging-Free

A Novel Metal-bridging Free Approach for Fabricating High-Performance MoS2 Transistors with Sub-100 nm Channel Length

電子研究所

電晶體、半導體元件、無金屬橋接製程、二維材料、二硫化鉬、transistor、semiconductor device、Metal-bridging Free、2D material、MoS2

Study of T-Gate Poly-Si CMOS Thin-Film Transistors with Lightly Doped Drain

電子研究所

多晶矽、薄膜電晶體、T型閘、輕摻雜汲極、空氣間隙、電漿鈍化、反相器、環形振盪器、Polysilicon (Poly-Si)、Thin-Film Transistor (TFT)、T-Shaped Gate (T-gate)、Lightly Doped Drain (LDD)、Air Spacer、Plasma Passivation、Inverter、Ring Oscillators (RO)

Effects of Channel Doping and Plasma Passivation on Characteristics of Polycrystalline Silicon Thin-Film Transistors with Various Gated Configurations

電子研究所

薄膜電晶體、多晶矽、T 型閘極、臨界電壓、輕度摻雜、電漿鈍化、Thin-Film Transistor、Poly-Si、T-Shaped Gate、Threshold Voltage、Lightly Doped Drain (LDD)、Plasma Passivation

Low-Temperature Fabrication and Analysis of Nanometer-Scale Double-Gated ITO TFTs Using Film Profile Engineering

電子研究所

薄膜輪廓工程方法、銦錫氧化物、薄膜電晶體、原子層沉積、雙閘極、Film-Profile Engineering、ITO、Thin-Film Transistors、ALD、Double Gate

Low-Temperature Fabrication and Characterization of Double-Gated and Sub-100 nm Channel Length IGZO TFTs Using Film Profile Engineering Scheme

電子研究所

低溫、原子層沉積、銦鎵鋅氧化物、low-temperature、atomic layer deposition、IGZO

Integration and Applications of Hybrid IGZO/Poly-Si Thin-Film Transistor Units

電子研究所

金屬氧化物、薄膜電晶體、薄膜輪廓工法、氧化銦鎵鋅、載子遷移率、開關電流比、次臨界擺幅、二氧化氮氣體感測器、源極汲極串聯電阻、反向器、氧化鋁、臨界電壓、電壓轉換曲線、雜訊容限、Metal Oxide (MO)、Thin-Film Transistor (TFT)、Film-Profile Engineering (FPE)、InGaZnO4 (IGZO)、Mobility、On/Off Current Ratio (ION/IOFF)、Subthreshold Slope (SS)、NO2 Gas Sensor、Source/Drain Series Resistance (RSD)、Inverter、Aluminum oxide (Al2O3)、Threshold Voltage (VTH)、Voltage Transfer Curve (VTC)、Noise Margin

Development of Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Flexible Display Applications

電子研究所・共同指導：張鼎張

可撓式顯示器、低溫多晶矽、薄膜電晶體、機械彎曲應力、正偏壓應力、負偏壓應力、負偏壓溫度不穩定性、熱載子效應、Flexible Displays、Low-Temperature Polycrystalline Silicon、Thin-Film Transistors、Mechanical Bending、Positive Gate Bias Stress、Negative Gate Bias Stress、Negative Bias Temperature Instability、Hot-Carrier Stress

Effects of Surface Roughness of Wafer, Transfer Process, and Annealing on Performance of MoS2 FETs

電子研究所

薄膜電晶體、二硫化鉬、表面粗糙度、熱退火、Thin-Film Transistors、MoS2、Surface Roughness、Thermal Annealing

Fabrication and Characterization of MoS2 FETs with Sub-100 nm Channel Length

電子研究所

電晶體、二硫化鉬、短通道元件、過渡金屬二硫屬化物、Transistor、MoS2、Short-channel Device、Transition Metal Dichalcogenides

Radio-Frequency Characteristics of Silicon-on-Insulator and Poly-Si Thin-Film Transistors with T-Shaped Gate

電子研究所

T型閘極、絕緣層上覆矽、多晶矽薄膜電晶體、射頻元件、截止頻率、最大震盪頻率、T-Shaped Gate、Silicon-on-Insulator、Poly-Si Thin-Film Transistors、RF Device、Cut-off Frequency (fT)、Maximum Oscillator Frequency (fmax)

Low-Temperature Fabrication and Characterization of Bottom-Gated and Double-Gated IGZO TFTs Using Film Profile Engineering Scheme

電子研究所

薄膜電晶體、銦鎵鋅氧化物、薄膜工程技術、Thin-Film Transistors、IGZO、film-profile engineering

A Hybrid Poly-Si/ZnO Thin-Film Transistor Cell: Fabrication, Characterization, and Gas Sensing

電子研究所

薄膜電晶體、多晶矽、氧化鋅、薄膜輪廓工法、二氧化氮傳感器、Thin-Film Transistors、Poly-Si、ZnO、Film Profile Engineering、NO2 sensing cell

Effects of Source/Drain Sb Contact on Performance of MoS2 Transistors Fabricated Using Film-Profile Engineering

電子研究所・共同指導：蘇俊榮

二硫化鉬、銻、半金屬、電晶體、接觸電阻、MoS2、Sb (Antimony)、Semimetal、transistor、contact resistance

Small-Signal and Large-Signal Characterization of GaN HEMT and MIS-HEMT under UV Irradiation

電子研究所・共同指導：黃國威

氮化鎵高電子遷移率電晶體、氮化鎵金屬-絕緣體-半導體高電子遷移率電晶體、散射參數、小訊號分析、X參數、大訊號分析、GaN HEMTs、GaN MIS-HEMTs、scatter parameters、small-signal analysis、X-parameters、large-signal analysis

A study of Channel Doping and Recessed-channel Scheme on RF Characteristics of Green-laser Annealed Poly-Si Thin-Film Transistors with T-Gate

電子研究所

薄膜電晶體、多晶矽、綠光雷射結晶、T型閘極、射頻元件、凹溝通道、Thin-Film Transistors、Poly-Si、Green Laser Crystallization、T-Shaped Gate、RF Device、Recess-Channel Structure

Design and Optimization of 120V-600V HVIC for Gate Driver Applications

電機資訊國際學程

高壓集成電路、N 型電平轉換器、P 型電平轉換器、n 型橫向擴散金屬氧化物 半導體、p 型橫向擴散金屬氧化物 半導體、全積體化嵌入式自舉二極體、High Voltage Integrated Circuit (HVIC)、N-level shifter、P-level shifter、n-LDMOS、p-LDMOS、Bootstrap diode

A Novel T-shaped Gate Poly-Silicon Thin-Film Transistor Featuring Self-Aligned Source/Drain/Gate Metallization Enabled by Lift-Off Process

電子研究所・共同指導：黃國威

薄膜電晶體、T型閘極、自我對準、舉離、反轉模式、無接面、Thin-Film Transistor、T-Shaped Gate、Self-Aligned、Lift-Off、Inversion-Mode、Jucntionless

Study on the Mechanisms of Off-state Current of T-gate Polycrystalline Silicon Thin Film Transistors

電子研究所・共同指導：李佩雯

薄膜電晶體、多晶矽、T 型閘極、場效傳導機制、場效傳導活化能、Thin-Film Transistor、Poly-Si、T-Shaped Gate、off-state conduction mechanism、activation energy

Fabrication and Characterization of Poly-Si Nanowire FETs with Dual-Gate Scheme

電子研究所

奈米線電晶體、無接面式電晶體、雙閘極、隨機電報雜訊、多晶矽、nanowire transistors、junctionless transistors、dual-gate、random telegraph noise、poly-Si

Radio-Frequency Characteristics of Thin-Film Transistors with T-shaped Gate and Poly-Si Channel Crystallized by Green Laser

電子研究所

薄膜電晶體、多晶矽、雷射結晶、T型閘極、射頻元件、Thin-film transistor、Poly-Si、Laser crystallization、T-shaped gate、RF device

Fabrication and Characterization of Double-gated IGZO Thin Film Transistors with Photoresist-based Film-Profile Engineering

電子研究所

薄膜電晶體、薄膜輪廓法、銦鎵鋅氧化物、TFT、FPE、IGZO

A Study on the Integration of Poly-Si TFTs and FPE IGZO TFTs

電子研究所

多晶矽薄膜電晶體、金屬氧化物電晶體、後段製程整合、Poly-Si TFT、IGZO TFT、BEOL

Study of the Impact of Bending Strain on the Performance of Flexible Organic Thin-Film Transistors and Charge Transport in Organic Semiconductors

國際半導體產業學院・共同指導：許恒通

有機薄膜電晶體、可撓性、彎曲應力、載子傳輸、Organic transistor、Flexible、Bending strain、Carrier Transport

Study of Poly-Si and IGZO Thin-Film Transistors for More-than-Moore Applications

電子研究所・共同指導：李佩雯

T型閘、多晶矽、射頻元件、薄膜電晶體、選擇性蝕刻、自我對準矽化、空氣邊襯、過渡金屬氧化物半導體、銦鉫鋅氧化物、T-shaped gate、poly-Si、radio frequency device、thin-film transistor、selective etching、SALICIDE、air-spacer、transition metal oxide semiconductor、IGZO

A Study on Effects of Different RTA Conditions for Nickel Salicide on Characteristics of Poly-Si Thin-Film Transistors

電子研究所

快速熱退火、自我對準鎳矽化物、多晶矽薄膜電晶體、RTA、Salicide、Poly-Si TFT

Fabrication of Nanotube and Nanowire Poly-Si Transistors and Random Telegraph Noise Characterization

電子研究所・共同指導：黃調元

管狀通道電晶體、奈米線電晶體、多晶矽、全包覆式閘極、隨機電報雜訊、多階隨機電報雜訊、三階隨機電報雜訊、高介電係數、非對稱源/汲極結構、tube-shaped channel transistors (Tube-FETs)、nanowire transistors、polycrystalline silicon (poly-Si)、gate-all-around (GAA)、random telegraph noise (RTN)、multi-level RTN、three-level RTN、high-κ (HK)、asymmetrical source/drain structure

Study on the Static and High-Frequency Characteristics of Polycrystalline-Silicon Thin-Film Transistors Using Green Nanoseconds-Laser Crystallization

電子研究所・共同指導：鄭晃忠

多晶矽、薄膜電晶體、雷射結晶、高頻特性、Poly-Si、Thin-Film Transistors、High-frequency、Laser Crystallization

Fabrication and Analysis of N-type Planar Junctionless Poly-Si Thin-Film Transistors with Nickel Silicide

電子研究所

無接面電晶體、矽化鎳、寄生電阻、junctionless transistor、NiSi、series resistance

Influences of passivation layers on the characteristics and stability of SnO thin film transistors

電子研究所

氧化亞錫、薄膜電晶體、薄膜輪廓工藝法、保護層、SnO、thin film transistors、film-profile engineering、passivation layers

Fabrication and Characterization of Gate-All-Around Polysilicon Junctionless Nanowire FETs with Dual-Gate Scheme

電子研究所

全環繞式、奈米線、無接面、雙閘極、Gate-all-around、nanowire、junctionless、dual-gate

Characterization of ZnO Thin Film Transistors Fabricated with Photoresist-based Film-Profile Engineering

電子研究所

薄膜電晶體、金屬氧化物、薄膜輪廓工法、Thin-film transistor、Metal oxide、Film-Profile Engineering

Fabrication of T-shaped Gate Poly-Silicon Thin-Film Transistors and Characterization of High-Frequency Operation Performance

電子研究所

T型閘極、高頻元件、多晶矽薄膜電晶體、薄膜電晶體、T-gate、RF device、poly-Si TFT、TFT

Influences of Interlayer Dielectrics on Electrical Characteristics of Double-Diffused Drain MOSFETs

電機學院電子與光電學程・共同指導：陳皇銘

雙擴散汲極金氧半場效電晶體、內介電層、Double-Diffused Drain MOSFET、Interlayer Dielectric

Structural Insight on Strain and Ge Content within SiGe Nanosheet Created by Proximal Ge Nanospheres

電子研究所・共同指導：李佩雯

矽鍺、奈米片、應力工程、通道工程、SiGe nanosheet、channel engineering、strain engineering、TEM

Dynamic distribution of Ge interstitial and Formation of Double Quantum Dots System for Quantum Computer

電子研究所・共同指導：李佩雯

鍺間隙子、量子電腦、量子點、Ge interstitial、Quantum Computer、Quantum Dot

Negative Capacitance and Ferroelectric Effects of FPE HZO TFTs

電子研究所・共同指導：李佩雯

薄膜輪廓工法、鐵電材料、負電容、薄膜電晶體、Film-profile engineering、Ferroelectric material、Negative capacitance、Thin film transistor

A Study on the Preparation, Post-Deposition Treatments, and Device Application of ZnON Thin Films

國際半導體產業學院

氮氧化鋅、沉積後處裡、霍爾量測、氮氣離子佈植、薄膜電晶體、Zinc oxynitride、Post-deposition treatment、Hall measurement、Nitrogen ion implantation、Thin film transistor

Study of the Characteristics of Metal-Oxide and Organic Thin-Film Transistors Fabricated by Film-Profile-Engineering Method and their Applications

電子研究所・共同指導：黃調元

金屬氧化物、薄膜形貌工法、薄膜電晶體、後段製程技術、偏移、高壓、反相器、氧化鋅、氮氧化鋅、氧化錫、有機、五苯環、電腦輔助模擬技術模擬、源極與汲極電阻、Metal-Oxide (MO)、Film-Profile-Engineering (FPE)、Thin-Film Transistor (TFT)、Back-End-Of-Line (BEOL)、Offset、High-Voltage (HV)、Inverter、ZnO、ZnON、SnO、Organic、Pentacene、Technology Computer Aided Design (TCAD) simulation、Source and Drain Resistance (RSD)

Study on the Preparation and Device Applications of Zinc Oxynitride Films

電子研究所・共同指導：黃調元

氧化物半導體、薄膜電晶體、氮氧化鋅、氧化鋅、氧化銦鎵鋅、薄膜輪廓工法、電子遷移率、短通道、源汲極電阻、反向器、電壓轉換曲線、電壓增益、穩定性、oxide-semiconductor、thin-film transistor、ZnON、ZnO、IGZO、film-profile engineering、mobility、short channel、source/drain resistance、inverters、voltage transfer curves、voltage gain、stability

Operation and RTN Characteristics of High-k/Metal-gate Gate-All-Around Poly-Silicon Nanowire Transistors

電子研究所

隨機電訊噪音、高介電係數金屬閘極、全環繞式、多晶矽奈米線、RTN、High-k/Metal gate、Gate-all-around、Poly-Silicon Nanowire

Simulation and Device Fabrication of Poly-Si TFTs with T-shaped Gate and Air Spacers

電子研究所

T型閘極、多晶矽、薄膜電晶體、空氣邊襯、T gate、Poly-Si、Thin film transistor、air spacer

A Study of Nanometer-Scaled ZnO Thin-Film Transistors Fabricated with Film Profile Engineering Method

電子研究所

氧化鋅、薄膜電晶體、薄膜輪廓工法、元件模擬、ZnO、thin film transistor、film profile engineering、T-CAD、simulation

Fabrication and Characterization of N-type Junctionless Poly-Silicon Transistors with Macaroni Channels

電子研究所

多晶矽、無接面、管狀電晶體、poly-Silicon、junctionless、macaroni

A Study on the Monolithic Integration of PMOSFETs and FPE ZnO TFTs

電子研究所

金氧半場效電晶體、薄膜輪廓工法、氧化鋅薄膜電晶體、單片整合、MOSFET、FPE、ZnO TFT、Monolithic integration

A Novel Poly-Si TFT with T-Shaped Gate and Air Spacers

電子研究所

T型閘極、多晶矽、薄膜電晶體、空氣邊襯、射頻元件、T-shaped gate、poly silicon、thin film transistor、air spacer、RF device

Fabrication and Characterization of High-k/Metal Gate Gate-All-Around Polysilicon Nanowire FET

電子研究所

高介電係數材料、金屬閘極、無接面電晶體、奈米線、全環繞式電晶體、閘極引起之汲極漏電流、High-k、Metal gate、Junctionless FET、Nanowire、Gate-all-around FET、GIDL

Study on the Preparation of Tin-Oxides Films and Fabrication of P-type Tin-Monoxide Thin-Films Transistors

電子研究所・共同指導：黃調元

氧化物半導體、薄膜電晶體、氧分壓、氧化錫、二氧化錫、累積式退火、保護層、元件操作壽命、雙閘極結構、oxide semiconductor、thin-film transistors、oxygen partial pressure、SnO、SnO2、cumulative annealing、passivation layer、long-term durability、double-gated structure

A study on the Fabrication and Characterization of Top-Gate ZnO TFTs and TiN-Channel TFTs

電子研究所・共同指導：黃調元

金屬氧化物、氮化鈦、氧化鋅、薄膜電晶體、上閘極、metal-oxide、TiN、ZnO、TFT、top-gate

Fabrication and Characterization of Self-Aligned ZnO Thin-Film Transistors with a T-shaped Gate

電子研究所・共同指導：黃調元

氧化鋅、薄膜電晶體、自我對準、Zinc-Oxide、Thin-Film Transistor、Self-Aligned

A Study of Plasma Treatments on the Performance of ZnO Thin Film Transistors with Passivation Layers

電子研究所・共同指導：黃調元

薄膜電晶體、氧化鋅、保護層、TFT、ZnO、Passivation

Characterization of N-type Gate-All-Around Poly-Silicon Nanowire Transistors Fabricated by Nitride-Spacer Hardmask Methods

電子工程學系 電子研究所

反轉式、堆疊式、無接面、環繞式閘極、奈米線、隨機電報雜訊、inversion mode、accumulation mode、junctionless、gate-all-around、nanowire、random telegraph noise

Fabrication and RTN Characteristics of Gate-All-Around Poly-Si Junctionless Nanowire Transistors

電子工程學系 電子研究所・共同指導：張睿達

閘極環繞式、無接面、奈米線電晶體、隨機電訊噪音、多晶矽、GAA、junctionless、nanowire transistor、RTN、poly-Si

Fabrication and Analysis of Amorphous In-Ga-Zn-O Thin-Film Transistors with Film-Profile-Engineering

電子工程學系 電子研究所・共同指導：黃調元

金屬氧化物、薄膜電晶體、銦鎵鋅氧、薄膜輪廓工法、場效遷移率、次臨界擺幅、光阻削減、短通道、源汲極電阻、自我對準、電腦輔助設計技術、狀態密度、複頻方法、修改型電導方法、Metal oxide、Thin-film transistors (TFTs)、InGaZnO (IGZO)、Film-profile engineering (FPE)、Field-effect mobility (µFE)、Subthreshold swing (SS)、Photoresist trimming、Short channel、S/D resistance (RSD)、Self-aligned (SA)、Density of states (DOS)、Multi-frequency method (MFM)、Modified conductance method (MCM)

Fabrication of Metal-Oxide Thin-Film Transistors and Inverters with “Film Profile Engineering”

電子工程學系 電子研究所・共同指導：黃調元

金屬氧化物、薄膜電晶體、薄膜輪廓工法、氧化鋅、氧化銦鎵鋅、載子遷移率、開關電流比、次臨界擺幅、積體電路後段主動元件、源極汲極串聯電阻、短通道效應、轉換電導、邏輯閘、三維、反向器、臨界電壓、電壓轉換曲線、雜訊容限、照光穩定性、Metal Oxide (MO)、Thin-Film Transistor (TFT)、Film-Profile Engineering (FPE)、ZnO、InGaZnO4 (IGZO)、Mobility、On/Off Current Ratio (ION/IOFF)、Subthreshold Slope (SS)、Back-End-Of-Line (BEOL)、Source/Drain Series Resistance (RSD)、Short-Channel Effect、Transconductance (GM)、Logic Gate、3-Dimensional (3D)、Inverter、Threshold Voltage (VTH)、Voltage Transfer Curve (VTC)、Noise Margin、Light-Induced Instability

Improvement and Analysis of a-IGZO Unipolar Inverters with FPE TFTs

電子工程學系 電子研究所・共同指導：黃調元

薄膜電晶體、非晶態銦鎵鋅氧化物、反向器、薄膜形貌工程、Thin Film Transistor、a-IGZO、Inverter、Film Profile Engineering

Fabrication and Characterization of ZnO Unipolar Inverters with FPE TFTs

電子工程學系 電子研究所・共同指導：黃調元

氧化鋅、反相器、薄膜形貌、ZnO、inverters、Film profile engineering

Study of Hybrid P/N Channel with Back-Gate Junctionless Field-Effect Transistor

電子工程學系 電子研究所・共同指導：張俊彥、黃調元

背向閘極、混合式、無接面、場效電晶體、back-gate、hybrid、junctionless、FET

Study of the Influences of Inorganic Passivation Layers on the Characteristics and Stability of Tin-Monoxide Thin Film Transistors

電子工程學系 電子研究所・共同指導：黃調元

薄膜電晶體、一氧化錫、保護層、穩定度、Thin Film Transistors、SnO、passivation、stability

Impact of Passivation Layers on the Stability of α-IGZO Thin Film Transistors

電子工程學系 電子研究所・共同指導：黃調元

氧化銦鎵鋅、薄膜電晶體、穩定性、保護層、α-IGZO、TFT、Stability、Passivation

Characterization of Gate-All-Around Nanowire Junctionless Poly-Silicon Thin Film Transistors Fabricated by Nitride Hard Mask Methods

電子工程學系 電子研究所・共同指導：黃調元

奈米線、無接面、薄膜電晶體、多晶矽、Nanowire、Junctionless、TFT、Poly-Silicon

A Study on Fabrication and Analysis of N-Type Planar and Tri-Gated Junctionless Polycrystalline Silicon Thin-Film Transistors

電子工程學系 電子研究所・共同指導：黃調元

無接面、多晶矽、薄膜電晶體、原位、平面式、摻雜析出、三閘極、低壓氣相沉積系統、邊襯、光阻薄化、junctionless、polysilicon、thin-film transistor、in-situ、planar、dopant segregation、trigate、low pressure vapor deposition、sidewall spacer、photoresist trimming

Improvement of Stability and Reliability of a-IGZO Thin Film Transistors with Organic Passivation Layers

電子工程學系 電子研究所・共同指導：黃調元

氧化銦鎵鋅、薄膜電晶體、穩定性、可靠度、有機保護層、a-IGZO、TFT、stabiltiy、reliability、organic passivation layer

Design and fabrication of N-type unipolar inverters with FPE TFTs

電子工程學系 電子研究所・共同指導：黃調元

薄膜電晶體、反向器、後段電路、thin film transistor、inverter、BEOL IC

Characterization of N-type Nanowire Nonvolatile Memory Devices Fabricated by Nitride-Spacer Hardmask Methods

電子工程學系 電子研究所・共同指導：黃調元

奈米線、非揮發性記憶體、氮化矽側壁、矽-氧化矽-氮化矽-氧化矽-矽、尖角效應、隨機電訊噪音、Nanowire、Nonvolatile Memory、Nitride spacer、SONOS、corner effect、Random Telegraph Noise

Fabrication and Characterization of Film-Profile-Engineered ZnO Thin-Film Transistors

電子工程學系 電子研究所・共同指導：黃調元

薄膜電晶體、氧化鋅、薄膜輪廓工法、Thin-Film Transistors、ZnO、Film-Profile-Engineered

Fabrication and Characterization of Sub-Micron Junctionless ITO TFTs Using Film Profile Engineering

電子工程學系 電子研究所・共同指導：黃調元

薄膜電晶體、銦錫氧化物、遲滯現象、薄膜工程、金屬氧化物半導體、次微米、無接面、thin-film transistor、indium tin oxide、ITO、hysteresis、film profile engineering、metal oxide semiconductor、sub-micron、junctionless

A Study on Asymmetrical MOSFETs and Junctionless Polycrystalline Silicon Thin-Film Transistors

電子物理系所・共同指導：趙天生、黃調元

雙重微影、非對稱元件、無接面元件、double patterning、asymmetrical device、junctionless device

Fabrication and Analysis of Novel Poly-Si Nanowire Non-Volatile Memory Devices

電子工程學系 電子研究所・共同指導：黃調元

奈米線、多晶矽、場效電晶體、自我對準、漏極感應勢壘降低、揮發記憶體、氧化鋁鉿、保持力、忍受力、短通道、Nanowire、Polycrystalline silicon、Field-effect transistor、Self-aligned、Drain induced barrier lowing、Non-volatile memory、Short channel

Fabrication and Characterization of Tin-Monoxide Thin Film Transistors

電子工程學系 電子研究所・共同指導：黃調元

一氧化錫、薄膜電晶體、SnO、TFTs

Fabrication and Characterization of Sub-100 nm ZnO TFTs

電子工程學系 電子研究所・共同指導：黃調元

氧化鋅、次一百奈米、金屬氧化物薄膜電晶體、ZnO、sub-100nm、metal oxide TFT

Fabrication and Characterization of N-Type Junctionless Poly-Si Thin-Film Transistors

電子工程學系 電子研究所・共同指導：黃調元

無接面、薄膜電晶體、低壓化學氣相沉積系統、磷偏析、次微米通道長度、邊襯、多頻電容-電壓量測、臨場摻雜、閘極所引起的源極漏電流、多晶矽、固定電荷密度、短通道效應、Junctionless (JL)、Thin-film transistor (TFT)、Low Pressure Chemical Vapor Deposition (LPCVD)、Segregation of phosphorous species、Sub-Lithographic Channel Length、Sidewall spacer、Multi-Frequency C-V Measurements、In situ doping、Gate-Induced Drain Leakage (GIDL)、Poly-Si、Fixed charge density、Short-channel effects (SCEs)

Fabrication and Characterization of a-IGZO Thin Film Transistors

電子工程學系 電子研究所・共同指導：黃調元

薄膜電晶體、IGZO

Electrical characteristics and analyses of HfOx based resistive random access memories

電子工程學系 電子研究所・共同指導：黃調元

電阻式記憶體、氧化鉿、鈦、鎳、RRAM、Hafnium oxide、Titanium、Nickel

Fabrication and Characterization of Undoped-ZnO Thin Film Transistors

電子工程學系 電子研究所・共同指導：黃調元

氧化鋅、ZnO

Characterization and Modeling of Wide-Drain LDMOS Transistors for RF Applications

電子工程學系 電子研究所・共同指導：陳坤明、黃調元

橫向擴散金氧半場效電晶體、設計、寬汲極、LDMOS、layout、wide-drain

A Study on the Device Characteristics of Polycrystalline Silicon FinFETs Fabricated with Double Patterning Technique

電子工程學系 電子研究所・共同指導：黃調元

鰭式場效電晶體、雙重微影成像法、多晶矽、FinFETs、Double Patterning Technique、Polycrystalline Silicon

Fabrication and Characterization of N-Type Junctionless Independent Double-Gated Nanowire Transistors

電子工程學系 電子研究所・共同指導：黃調元

獨立雙閘極、無接面奈米線電晶體、導通機制、TCAD模擬、閘極控制能力、短通道效應、independent double-gated、juntionless nanowire transistors、conduction mechanism、TCAD simulation、gate controllability、short channel effects (SCEs)

Fabrication and Characterizations of Planar Independent Double-Gated Poly-Si SONOS Devices and Asymmetric Schottky Barrier Thin-Film Transistors

電子工程學系 電子研究所・共同指導：黃調元

蕭特基能障、獨立雙閘極、矽化鉑、多晶矽、Schottky barrier、Independent Double-Gated、PtSi、poly-Si

Fabrication and High-Frequency Characterization of N-type Poly-Si Thin-Film Transistors

電子工程學系 電子研究所・共同指導：黃調元

N型多晶矽薄膜電晶體、光阻微調技術、小訊號參數、小訊號模型、截止頻率、n-type poly-Si thin-film transistors、photoresist-trimming techniques、small-signal parameters、small-signal model、cut-off frequency

Impacts of Channel's Cross-Sectional Shape on the Operation of Poly-Si Nanowire Nonvolatile Memory Devices

電子工程學系 電子研究所・共同指導：黃調元

奈米線電晶體、環繞全閘極、電荷儲存能力、忍耐度、nanowire FET、gate-all-around、retention、endurance、SONOS、TAHOS

Fabrication and Characterization of Poly-Si NW-Channel CMOS Inverters with Ni Silicided Source and Drain

電子工程學系 電子研究所・共同指導：黃調元

互補式金氧半反相器、奈米線、矽化鎳、電漿處理、CMOS inverter、nanowire、Ni-silicidation、plasma treatment

An Investigation on the Characteristics and Applications of Novel Multiple-Gated Inversion-Mode and Junctionless Polycrystalline Silicon Nanowire Thin-Film Transistors

電子工程學系 電子研究所・共同指導：黃調元

奈米線、獨立雙閘極、全包覆式閘極、多晶矽、薄膜電晶體、矽 -氧化矽-氮化矽-氧化矽-矽、無接面、蕭特基位障、低於六十的次臨界擺幅、nanowire (NW)、independent double-gated (IDG)、gate-all-around (GAA)、polycrystalline silicon (Poly-Si)、thin-film transistor (TFT)、silicon-oxide-nitride-oxide-silicon (SONOS)、junctionless (J-less)、Schottky-barrier (SB)、sub-60 mV/dec SS

Fabrication and Analysis of Novel Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Their Applications

電子工程學系 電子研究所・共同指導：黃調元

奈米線、多閘極、多晶矽、薄膜電晶體、背閘極效應、變異度、非揮發記憶體、SONOS、感測器、Nanowire (NW)、Multiple-Gate (MG)、Polycrystalline Silicon (Poly-Si)、Thin-Film Transistor (TFT)、Back-Gate Effect、Variability、Non-Volatile Memory (NVM)、Silicon-Oxide-Nitride-Oxide-Silicon (SONOS)、Sensor

Fabrication and Analysis of Independent Double-Gated Poly-Si Nanowire Thin-Film Transistors

電子工程學系 電子研究所・共同指導：黃調元

奈米線、獨立雙閘極、多閘、多晶矽、臨場摻雜、薄膜電晶體、次臨界擺幅、穿隧、雜質、低溫測量、遲滯、非揮發記憶體、矽-氧化矽-氮化矽-氧化矽-矽、背閘效應、單一記憶胞二位元儲存、Nanowire、Independent Double-Gated (IDG)、Multiple-Gated、Polycrystalline Silicon (Poly-Si)、In Situ Doping、Thin-Film Transistor (TFT)、Subthreshold Swing (SS)、Tunneling、Dopant、Low Temperature Characterization、Hysteresis、Non-Volatile Memory (NVM)、Back-Gate Effect、Silicon-Oxide-Nitride-Oxide-Silicon (SONOS)、2-bit/cell

A Study on the Fabrication, Characterization, and Reliability Issues of PMOSFETs with Double-Patterning Technique

電子工程學系 電子研究所・共同指導：黃調元

雙重微影、金氧半場效電晶體、Double-Patterning、MOSFET

A Study on the Characterization of High-κ Materials and their Applications to Poly-Si Nanowire Nonvolatile Memory Devices

電子工程學系 電子研究所・共同指導：黃調元

奈米線電晶體、環繞全閘極、電荷儲存能力、忍耐力、nanowire FET、gate-all-around、retention、endurance、TAHOS