李義明

Application of Traditional and Generative Artificial Intelligence to the Modeling and Synthesis of TCAD-Simulated I-V Curves in Emerging Semiconductor Devices

電機資訊國際博士學位學程

傳統人工智慧、混合式神經網路、轉移式學習、生成式人工智慧、生成對抗網路、條件式生成對抗網路、三維度半導體技術電腦輔助設計、全閘極奈米片場效應電晶體、金屬閘極功函數擾動、製程變異效應、電流電壓特性曲線、Traditional AI、Hybrid neural network、Transfer Learning、Hybrid Transfer Learning、Gen AI、Generative adversarial networks、Conditional GANs、Nanosheet、Field effect transistors、Complementary FET、Work Function Fluctuation、Process variation effects、Electrical Characteristics

Effect of Gate Structure Designs on the Threshold Voltage of Amorphous Silicon Thin-Film Transistors

電機學院碩士在職專班

非晶矽薄膜電晶體、臨界電壓、Amorphous Silicon Thin-Film Transistors、Threshold Voltage

Artificial Intelligence-Assisted Device Modeling with Temperature Effects for Current and Capacitance Characterization and Applications in Gate-All-Around Field-Effect Transistors and Circuits

智慧醫電工程研究所

人工智慧、機器學習、深度學習、人工神經網路、全閘極奈米片場效應電晶體、互補式場效電晶體、電流模型、電容模型、溫度效應、元件模擬、電路模擬、Artificial Intelligence、Machine Learning、Deep Learning、Artificial Neural Networks、Gate-All-Around Nanosheet Field-Effect Transistor、Complementary Field-Effect Transistor、Current Modeling、Capacitance Modeling、Temperature Effects、Device Simulation、Circuit Simulation

Bandgap Reference Circuit Design Optimization via Genetic Programming with Multi-Objective Evolutionary Algorithm

電機學院碩士在職專班

基因編程、多目標演算法、設計最佳化、系統化電路架構、帶隙參考電路、Genetic Programming、Multi-Objective Evolutionary Algorithm、Design Optimization、Systematic circuit、Bandgap reference circuit

Fabrication and Characterization of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors

電機學院博士班・共同指導：寒川誠二、李耀仁

氮化鋁鎵/氮化鎵高電子遷移率電晶體、低溫、增強型模式、閘極掘入、中性粒子束蝕刻、後金屬化退火、臨界電壓變化、AlGaN/GaN HEMTs、cryogenic temperature、enhancement mode、gate recess、neutral beam etching、post-metallization annealing、threshold voltage variation

Contact Simulation of Physical Based Monolayer and Bilayer Molybdenum Disulfide Gate-All-Around Nanosheet Field Effect Transistors

電信工程研究所

密度泛函理論、元件模擬、凡德瓦間隙、奈米片場效電晶體、Density Functional Theory、Device Simulation、VdW Gap、Nanosheet FETs

Comprehensive Investigations of Electrical Instabilities of Scaled α-IGZO-TFTs Under The Various Stress and Temperature Conditions

電機資訊國際博士學位學程・共同指導：李耀仁

α-IGZO-薄膜場效電晶體、正偏壓溫度應力（PBTS）、負偏壓溫度應力（NBTS）、熱載子應力（HCS）、應力與恢復、高κ材料、奈米片、熱反射測量、電性不穩定性、α-IGZO-TFTs、positive bias temperature stress (PBTS)、negative bias temperature stress (NBTS)、hot carrier stress (HCS)、stress and recovery、high-κ material、nanosheet、thermoreflectance、electrical instabilities

On Process Variation Effect and Intrinsic Parameter Fluctuation of Vertically Stacked Gate-All-Around Silicon Nanosheet Complementary Field-Effect Transistors

電機資訊國際博士學位學程

互補式場效電晶體、全閘極、奈米片、製程變異效應、本質參數擾動、功函數擾動、隨機摻雜擾動、統計式元件模擬、complementary field-effect transistors、gate-all-around、nanosheet、process variation effect、intrinsic parameter fluctuation、work function fluctuation、random dopant fluctuation、statistical device simulation

Application of Dynamic Machine Learning Techniques to Compact Modeling and Circuit Simulation of Emerging GAA MOSFETs

電機資訊國際博士學位學程

電路模擬、互補式場效應電晶體、電晶體等效電路模型、先進元件建模、機器學習、全閘極奈米片場效應電晶體、Emerging Device Modeling、Circuit Simulation、Compact Model、Complementary FETs、Machine Learning、Nanosheet

Statistical Modeling and Analysis of Characteristic Fluctuation Induced by Random Metal Gate Work Function of the Gate-All-Around MOSFETs

電信工程研究所

功函數擾動模型、臨界電壓、晶粒尺寸、環形閘極、元件模擬、電路模擬、Work function fluctuation model、threshold voltage、grain size、gate-all-around、device simulation、circuit simulation

Design of Energy Efficient Tunneling Field Effect Transistors

電機資訊國際博士學位學程

帶對帶穿隧、互補式場效應電晶體、互補式穿隧場效應電晶體、節能、鐵電、佔地面積、全閘極、次臨界擺幅、穿隧場效應電晶體、BTBT、CFET、CTFET、energy-efficiency、ferroelectric、footprint、GAA、subthreshold swing、TFET

Framework of Machine-Learning-Aided Device Modeling and Its Application in Circuit Simulation of Gate-All-Around Field Effect Transistors

電信工程研究所

電晶體等效電路模型、機器學習、神經網絡、先進元件建模、全閘極奈米片場效應電晶體、互補式場效應電晶體、電路模擬、Compact Model、Machine Learning、Neural Network、Emerging Device Modeling、Nanosheet FETs、Complementary FETs、Circuit Simulation

Automatic Design and Implementation of Ultra-wide and Dual Band Antennas

電信工程研究所

超寬頻天線、雙頻天線、一統化的最佳化平台、多目標演算法、自動剪裁天線技術、Ultra-wide Band Antenna、Dual Band Antenna、Uni ed Optimization Framework、Multi-objective Evolutionary Algorithm、Antenna Design with Automatic Geometry Cropped Technique

Applications of Deep Learning Algorithms in Modeling of Emerging Field-Effect Transistors

電機資訊國際學程

人工智慧、深度學習、半導體元件、場效應電晶體、隨機森林回歸器、卷積神經網路、長短期記憶、Artificial Intelligence、Deep Learning、Semiconductor Devices、Field-Effect Transistor、Random forest regressor、Convolutional neural network、Long Short Term memory

On the energy band of Si/Si0.7Ge0.3 nanopillars

電信工程研究所

能帶、能量狀態密度、電子、電洞、矽/矽鍺奈米柱、薛丁格方程式、energy band、density of state、electron、hole、Si/Si0.7Ge0.3 nanopillar、Schrödinger equation

Hybrid Intelligent Optimization Methodology for Automatic Compact Model Parameter Extraction of Emerging Semiconductor Devices

電信工程研究所

電晶體等效電路模型、元件模型卡、自動化參數萃取、智慧型最佳化方法、多目標演算法、次5奈米技術世代、Compact model (Equivalent circuit model、SPICE model)、Device model card、Automatic model parameter extraction、Hybrid intelligent methodology、Multiobjective evolutionary algorithms、Sub-5-nm technology nodes

Modeling and Simulation of Semiconductor Nanostructures for Energy Harvesting Technologies

電信工程研究所

半導體奈米結構、能源收集技術、有限元素方法、能帶結構、中間能帶太陽能電池、奈米線熱電元件、semiconductor nanostructures、energy harvesting technologies、finite element method、band structure、intermediate band solar cell、nanowire thermoelectric device

First-Principle Calculations of the Electronic Structure of Two-Dimensional Materials: Doping Engineering of Molybdenum Disulfide and Scandium Contact of Black Phosphorus

電信工程研究所

第一原理、二維材料、黑磷、二硫化鉬、接觸電阻、過渡金屬摻雜、First-Principle Calculation、2D Materials、Black Phosphorus、Molybdenum Disulfide、Contact Resistance、Transition-Metal Doping

Dynamic and Power-Delay Characteristic Fluctuation Induced by Nanosized Titanium Nitride Grains of Gate-All-Around Nanowire CMOS Circuits

生醫工程研究所

隨機功函數擾動、高寬比變異效應、全閘極奈米線場效應電晶體、氮化鈦晶粒、電路、功率特性擾動、時序特性擾動、直流特性擾動、交流特性擾動、work function fluctuation (WKF)、aspect ratio (AR)、Titanium Nitride Grains、nanowire、gate-all-around、CMOS circuit、DC fluctuation、AC fluctuation、timing fluctuation、power fluctuation

Process-Dependence Analysis and Electrical Characteristic Modeling of High-k Metal Gate Bulk FinFET Devices

電信工程研究所

鰭式場效應電晶體、製程參數、電特性、敏感性分析、資料探勘、製程變異、High-Metal Gate Bulk FinFET、Electrical Characteristic、Inline process parameters、Sensitive analysis、Data-Mining、Ring Oscillator、Process Variation

Characteristic Simulation of Next-Generation InGaAs Multiple-Gate MOSFET Devices

電信工程研究所

砷化銦鎵、金氧半場效應電晶體、塊材鰭式場效應電晶體、全閘極奈米線場效應電晶體、多閘極、InGaAs、MOSFET、Bulk FinFET、Gate-All-Around Nanowire MOSFET、Multiple-Gate

Novel Multi-level Clock Driving Technique and Circuit-Simulation-Based Multi-objective Evolutionary Algorithm for Design Optimization of a-Si:H TFTs Gate Driver Circuits for Bio-ICT Panel Display Applications

生醫工程研究所

非晶矽薄膜電晶體、閘極驅動電路、多目標演算法、最佳化、電路設計、a-Si:H TFTs、gate driver circuit、multi-objective evolutionary algorithm、optimization、circuit design

Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-nm Gate-All-Around Nanowire MOSFET Devices

電信工程研究所

製程變異、金屬功函數擾動、隨機摻雜擾動、奈米線、場效應電晶體、Process Variation Effect、Metal-Gate Work-Function Fluctuation、Random Dopant Fluctuation、Nanowire、MOSFET

Characteristic and Power-Consumption Fluctuations of Low-Operating-Voltage HKMG Bulk FinFET Devices and Circuits Induced by Intrinsic Parameter Fluctuation

電信工程研究所

鰭式場效電晶體、本質參數擾動、FinFET、intrinsic parameter fluctuation

On Characteristic Fluctuation of Trapezoidal Bulk FinFET Devices and Its Implication on Digital Circuits

電信工程研究所

梯形通道、塊材鰭式場效應電晶體、擾動、線邊緣粗糙、隨機摻雜擾動、數位電路、臨界電壓、Trapezoidal-shape channel、Bulk FinFET、Fluctuation、Line edge roughness、Random dopant fluctuation、Digital circuit、Threshold voltage

Design, Fabrication and Characterization of High-Performance Amorphous Silicon Gate Driver Circuits

電信工程研究所

非晶矽、薄膜電晶體、閘極驅動電路、可靠度、高效能、液晶顯示器、amorphous silicon、thin film transistor、gate driver circuit、reliability、high performance、liquid crystal display

Investigation of ZrO2/Ge Gate Stack Fabricated on Ge-Channel MOSFETs

電信工程研究所・共同指導：簡昭欣

鍺、場效電晶體、二氧化鋯、germanium、MOSFET、ZrO2

DC Characteristic Fluctuation of 16-nm-Gate HKMG Bulk FinFET Devices Induced by Random Position of Discrete Dopant and Random Grain of Metal Gate

電信工程研究所

鰭式場效應電晶體、隨機離散摻雜、隨機金屬功函數擾動、FinFET、random dopant fluctuation、random workfunction fluctuation

Solar Cell Structure Design Optimization using Device Simulation-based MOEA and UOF Methodology

電信工程研究所

多目標、太陽能電池、統合式最佳化架構、MOEA、Solar cell、UOF

Multi gate FET random dopant fluctuation and nanogap field emission

電信工程研究所

多閘極多通道立體電晶體、變流器、靜態隨機存取記憶體、隨機摻雜擾動、線邊緣擾動、元件電路模擬、奈米級鈀金屬裂縫、場發射效率、表面傳導電子發射體、三維有限差分時域粒子式電磁模擬方法、Multi-fin FinFET、Inverter、SRAM、Random dopant fluctuation、Line edge roughness、Mix-mode simulation、nanoscale Pd think-film strip、Field emission efficiency、surface conduction electron-emitter、3D FDTD-PIC

A Unified 3D Device Simulation of Intrinsic Parameter Fluctuation on High-k/Metal Gate Bulk FinFET Device

電機工程學系

鰭式場效應電晶體、內部參數擾動、3D Device Simulation、High-k/Metal Gate Bulk FinFET Device、Intrinsic Parameter Fluctuation

Compact Model Parameter Extraction for a-Si:H TFTs and Application to Integrated Gate Driver Circuit Simulation

電機工程學系

非晶矽薄膜電晶體、製程參數、閘極驅動電路、RPI 薄膜電晶體模型、通道、製程參數檔、amorphous silicon thin film transistor、model parameter、gate drive circuit、rensselaer polytechnic institute thin film transistor model、channel、model card

Effects of Random Interface Traps and Trapping/De-Trapping on Electrical Characteristics of 16 nm High-k/Metal Gate MOSFETs

電信工程研究所

介面缺陷、高介電場效應電晶體、靜態擾動、動態特性、Interface Traps、High-k/Metal Gate、Fluctuations、Dynamic Operation

Hybrid MOEA for ASG Driver Circuit Optimization and GP Formulation of TFT-LCD Layout Routing

電信工程研究所

多目標最佳化、演化式計算、反應曲面法、驅動電路、幾何規劃、繞線佈局、Multi-objective optimization、Evolutionary algorithm、Response surface methodology、Driver circuit、Geometric programming、Layout routing