吳耀銓

Physical Properties and Dielectric Breakdown Characteristics of Al₂O₃ Thin Films Deposited by Flow-rate Interrupted Atomic Layer Deposition

前瞻半導體研究所

氧化鋁高介電常數介電層、原子層沉積 (ALD)、氣流中斷法 (FRI)、崩潰電場、頻率色散、Al₂O₃ high-k dielectric、Atomic layer deposition (ALD)、Flow-rate interrupted (FRI)、Breakdown electric field、Frequency dispersion

Effects of Adding K₂CO₃ and KNO₃ on KOH Etching of SiC

材料科學與工程學系

碳化矽、KOH蝕刻、TSD缺陷分析、低溫蝕刻製程、速率控制步驟、Silicon Carbide、KOH Etching、TSD Defect Analysis、Low-Temperature Etching Process、Rate-Limiting Step

Kinetics of KOH/K2CO3 on SiC Etching Pits

工學院專班-半導體材料與製程設備學程

KOH–K₂CO₃相圖、固液共存、六角形蝕坑、碳化矽蝕刻、阿瑞尼式方程式、KOH–K₂CO₃ phase diagram、solid–liquid coexistence region、Etch pits、SiC etching、Arrhenius Equation

Rapid thinning of SiC substrates by dicing saw and wet etching

材料科學與工程學系奈米科技

碳化矽、熔融 KOH、熔融 K2CO3、快速減薄、輪刀刻劃、穿透型螺旋差排、Silicon carbide (SiC)、molten KOH、molten K2CO3、rapid thinning、dicing saw、threading screw dislocation (TSD)

Effect of Atmosphere and Etching Solution Ratio on Etching Pits in Silicon Carbide Etching Using KOH/NaOH Solution

工學院專班-半導體材料與製程設備學程

碳化矽、氫氧化鉀、氫氧化鈉、蝕刻坑形貌、氣氛環境、TSD、Silicon Carbide (SiC)、KOH、NaOH、Etch Pit、Atmosphere

SiC Substrate Thinning via Laser-Assisted KOH Etching

材料科學與工程學系

碳化矽、氫氧化鉀蝕刻、機械研磨、厚度減薄、碳面、矽面、動力學、silicon carbide、KOH etching、mechanical grinding、thickness thinning、carbon face、silicon face、kinetics

The Effects of Thermal Oxidation and Potassium Hydroxide Etching on the Surface Properties of Silicon Carbide and the Quality of Subsequent Epitaxial Growth

前瞻半導體研究所

碳化矽、熱氧化、KOH蝕刻、表面整平、磊晶缺陷、晶體品質分析、化學機械研磨、silicon carbide、thermal oxidation、KOH etching、surface planarization、epitaxial defects、crystal quality analysis、chemical mechanical polishing

Mitigation of Ammonia-Fluorine Induced Defects via Hardware and Process Optimization in Bevel Etching

工學院專班-半導體材料與製程設備學程

碳硬式光罩、斜角乾蝕刻、冷凝缺陷、氟化銨缺陷、DRAM、Carbon Hard Mask、Bevel Dry Etch、Condensation Defect、Ammonium Fluoride

Activation of Silicon Implanted into Gallium Nitride Using Ultraviolet Laser and RTA Thermal Treatment

工學院專班-半導體材料與製程設備學程

氮化鎵、矽離子佈植、快速熱退火、雷射退火、載子活化率、gallium nitride、silicon ion implantation、rapid thermal annealing、laser annealing、carrier activation ratio

Effect of Oxygen Annealing on Electronic Behavior and Energy Band of HfO2 on In2O3 Thin Films

材料科學與工程學系・共同指導：林昆霖

氧化銦、異質接面、能帶偏移、漏電流、X光光電子能譜儀、Indium oxide、Heterojunction、Band offset、Leakage current、X-ray photoelectron spectroscopy

A High-Efficiency SiC Wafer Thinning Technique via Laser Patterning and KOH Lateral Etching

材料科學與工程學系

碳化矽化學機械研磨、損傷層、雷射圖案、KOH蝕刻、表面整平、TSD、化學機械研磨、silicon carbide、damage layer、laser pattern、KOH etching、surface planarization、chemical mechanical polishing

Wet Etching Process for SiC Substrate Thinning and Surface Damage Layer Removal

前瞻半導體研究所

碳化矽、損傷層、低溫蝕刻、晶體缺陷、表面改質、快速減薄、共熔蝕刻、Silicon carbide、damaged layer、low temperature etching、crystal defects、surface modification、rapidly thinning、Eutectic etching

The Void Healing Mechanism of Electroplated Cu-Cu bonding

工學院專班-半導體材料與製程設備學程

銅-銅接合、孔洞癒合機制、高溫退火、三維封裝、表面擴散、Cu-Cu bonding、void healing mechanism、annealing、3DIC package、surface diffusion

Carrier Activation in Polycrystalline Silicon Doped with Arsenic and Boron Difluoride Using Plasma Immersion and Beam-Line Ion Implantation Techniques

材料科學與工程學系・共同指導：林昆霖

多晶矽、電漿浸潤式離子佈植、紫外光雷射退火、微分霍爾量測、載子活化率、Poly-Silicon、Plasma immersion ion implantation tool、Ultra-violet laser annealing、Differential Hall effect measurement、Carrier active ratio

Quantitative analysis method for phosphorus implantation in silicon substrates using atom probe tomography

材料科學與工程學系・共同指導：林昆霖

原子針尖斷層影像、Atom probe tomography

Enhanced Copper Bonding by Quenching to Form Nano wrinkled Surfaces

工學院專班-半導體材料與製程設備學程

三維積體電路、矽穿孔、銅銅接合、淬火、消除接合介面、3D integrated circuits、through through-silicon via、Cu-Cu bonding、quenching、elimination of bonding interface

Optimization and Electrical Characterization of Large-Scale Epitaxial 2D Semiconductor Bi2O2Se Films on Silicon

材料科學與工程學系奈米科技・共同指導：朱英豪

硒氧化鉍、二維半導體、矽基、磊晶、電晶體、Bismuth Oxyselenide、2D Semiconductor、Silicon-based、Epitaxy、Transistor

Kinetics of KOH/NaOH on SiC Etching Pits

工學院專班-半導體材料與製程設備學程

碳化矽、氫氧化鉀、氫氧化鈉、蝕刻坑、動力學、Silicon Carbide、KOH、NaOH、Etch Pit、Kinetics

Design of RF Conductive Characteristics for 5G Mobile Communications

工學院專班-半導體材料與製程設備學程

第五代行動通訊、射頻傳導特性、5G Mobile、RF Conductive Characteristics

Microstructures and Electrical Properties of Si Substrate Doped with AsH3 and BF3 via Plasma Immersion Ion Implantation

工學院專班-半導體材料與製程設備學程

單晶矽、電漿浸潤離子佈植、雷射退火、載子活化、微分霍爾量測、Single crystal silicon、Plasma Immersion Ion Implanter (PIII)、Laser Annealing (LA)、carrier activation、Differential Hall Effect Metrology (DHEM)

Activation and Diffusion of Arsenic Implanted in Silicon Substrate via Differential Hall Effect Metrology and Atom Probe Tomography

材料科學與工程學系・共同指導：林昆霖

穿透式電子顯微鏡、二次離子質譜儀、微分霍爾效應測量法、三維原子探針、快速熱退火、摻雜劑再分佈、Transmission Electron Microscopy、Secondary Ion Mass Spectrometry、Differential Hall Effect Measurement、Atom Probe Tomography、Rapid Thermal Annealing、Dopant redistribution

Microstructures and Mechanical Properties of Aluminum and Copper Metallic Substrates Bonded with Titanium and Silver Thin Films

材料科學與工程學系奈米科技・共同指導：林昆霖

銅鋁介金屬、剪切強度試驗、奈米壓痕、鈦、銀、intermetallic layer、shear strength test、nanoindentation、titanium、silver

Thickness Effect of Silver Metallic Interlayer in Microstructures and Mechanical Properties of Aluminum and Copper Bonding

材料科學與工程學系・共同指導：林昆霖

鋁銅接合、暫態液相接合、介金屬微結構、鋁銀銅交互擴散、陶瓷基板、Al/ Cu bonding、TLP bonding、intermetallic microstructure、Al/ Ag/ Cu interdiffusion、Ceramic Substrate

Dopant Distribution and Electrical Depth Profiles of Boron-Doped Silicon Substrates

材料科學與工程學系・共同指導：林昆霖

摻雜劑分佈、二次離子質譜儀(SIMS)、原子探針斷層掃描技術(APT)、微分霍爾效應測量法(DHEM)、載子活化、dopant distribution、atom probe tomography、differential hall effect metrology、secondary ion mass spectrometry、carrier activation

Effects of sodium peroxide and oxygen atmosphere on the morphology and kinetic of silicon carbide potassium hydroxide etch pits

前瞻半導體研究所

碳化矽、寬能隙半導體、貫穿刃形差排、貫穿螺旋差排、SiC、TSD、TED、Wide band gap

The Impact of Na2O2 on the Etching Morphology and Kinetics of "SiC KOH Etching Pits"

工學院專班-半導體材料與製程設備學程

碳化矽、氫氧化鉀、過氧化鈉、蝕刻坑形貌、差排揭示、氣氛、Silicon Carbide、KOH、Na2O2、Etch Pit Morphology、Dislocation Revelation、Atmosphere.

Reduce PR Residue in the Wafer Center of the Contact Layer During Lithography Production

工學院專班-半導體材料與製程設備學程

光阻殘留、預濕潤、微影製程、接觸窗、超純水沖洗、PR Residue、Pre-Rinse、Lithography、Contact layer、Rinse

Low-Temperature Cu-Cu Bonding and Elimination of Bonding Interface in 3D IC

材料科學與工程學系

低溫銅銅接合、接合機制、晶界遷移、晶粒成長、奈米雙晶銅、表面改質、Low-temperature Cu–Cu bonding、Bonding mechanism、Grain boundary migration、Grain growth、Nanotwinned Cu、Surface modification

Enhanced Nanotwinned Copper Bonding in 3DIC through Epoxy-Induced Copper Surface Modification

材料科學與工程學系

奈米雙晶銅、銅銅直接接合、晶粒細化、表面改質、異常晶粒成長、nanotwinned Cu、Cu–Cu direct bonding、abnormal grain growth、grain refinement、surface modification

Elimination of Copper Bonding Interfaces in 3DICs Using Different Copper Films and Pressures

前瞻半導體研究所

三維積體電路、銅銅混合接合、可靠度、介面消除、微結構、異常晶粒成長、3DIC、Cu-Cu hybrid bonding、Reliability、Bonding interface elimination、Microstructure、Abnormal grain growth

The Effect of Surface Modification on SiC Homoepitaxy

材料科學與工程學系

碳化矽、化學機械研磨、損傷層、晶體缺陷、磊晶缺陷、晶體品質分析、silicon carbide、chemical mechanical polishing、damage layer、crystal defects、epitaxial defects、crystal quality analysis

Study on Magnetic Anisotropy of Complex Oxides

材料科學與工程學系・共同指導：朱英豪

磁異向性、脈衝雷射沉積、X光吸收、垂直磁異向性、高熵、Magnetic anisotropy、Pulsed laser deposition、X-ray absorption、Perpendicular magnetic anisotropy、High entropy

Enhanced Cu-Cu Bonding Quality in 3DIC Through Quenching Treatment and Microstructural Differences in Copper Films

材料科學與工程學系

三維積體電路、銅銅接合、淬火、(111)奈米雙晶銅、消除接合介面、3D integrated circuits、Cu-Cu bonding、quenching、(111)-oriented nanotwinned copper、elimination of bonding interface

Effect of Cu thickness on the interfacial voids of Cu-Cu bonding for 3D IC

工學院專班-半導體材料與製程設備學程

3DIC、銅銅接合、矽穿孔、銅厚、孔洞演化、Cu-Cu Bonding、TSV、Cu thickness、void evolution

The Impact of Oxidizer Addition in Grinding Liquid on the Chemical Mechanical Polishing Behavior of Copper and Ruthenium

工學院專班-半導體材料與製程設備學程

化學機械研磨、加凡尼腐蝕效應、靜態蝕刻率、塔佛曲線、原子力學顯微鏡、Chemical Mechanical Polishing、Galvanic corrosion、static etching rate、Tafel curve、Atomic Mechanics Microscopy

Evolution of Dishing Voids in the Cu-Cu Bonding for 3DIC

工學院專班-半導體材料與製程設備學程

3DIC、銅銅接合、矽穿孔、孔洞癒合、可靠度、淺碟(Dishing)、Cu-Cu bonding、void healing、reliability、TSV、Cu、Dishing

Effect Of Wet Etching Processes On The Undercut Of Copper Pillar Bumps

工學院專班-半導體材料與製程設備學程

銅蝕刻液、蝕刻製程、雙氧水、磷酸、硫酸鹽、copper etchant、etching process、hydrogen peroxide、phosphoric acid、sulfate system

Conversion of Basal Plane Dislocation on 4H-SiC by Epitaxy

工學院專班-半導體材料與製程設備學程

碳化矽、基底面差排、貫穿型刃差排、磊晶、4H-SiC、BPD、TED、Epitaxy、TSD

Thermal Cycling Effect of Hybrid Silver/Copper Paste for Die Attach Bonding

材料科學與工程學系所・共同指導：林健正、林昆霖

晶片接合、銀膠、銅膠、燒結、熱循環、熱傳導、電阻率、die attach、silver paste、copper paste、sintering、thermal cycling test、thermal conductivity、resistivity

Effect of Compressive Stress on the evolution of interfacial voids and the reliability of 3DIC Cu-Cu bonding

工學院半導體材料與製程設備學程

三維積體電路、矽穿孔技術、化學機械研磨、銅銅接合、電鍍銅銅柱、3D IC、TSV、CMP、Cu-Cu bonding、Electroplated copper pillar

Thermal Cycling effects on Thermal Dissipation Ceramic Substrates for High Power Electronics

材料科學與工程學系所・共同指導：林健正、林昆霖

介金屬層、斷裂面、冷熱循環試驗、剪切強度試驗、銀箔、intermetallic layer、fracture surface、thermal cycling test、shear strength test、silver foil

Electrical Properties of Phosphorus and Boron doped Silicon Using Micro-Mesa Shrinking

材料科學與工程學系所

單晶矽、載子活化、縱深分析、微分霍爾量測、縮小探針、Crystalline silicon、Carrier activation、Depth profiles、Differential Hall Effect Measurement、Micro-mesa measurement

Effect of copper thicknesses on the evolution of voids in Cu-Cu wafer bonding for 3DIC

材料科學與工程學系所

三維積體電路、銅-銅接合、孔洞演變、電鍍銅薄膜、矽穿孔、3DIC、Cu-Cu bonding、Voids evolution、electroplated copper thin films、TSV

Effect of Compressive Stress on Copper-Copper Bonding in 3DIC

材料科學與工程學系所

三維積體電路、銅銅直接接合、孔洞演變、潛變、表面擴散、3DIC、Cu-Cu direct bonding、void evolution、creep、surface diffusion

The effects of stress on void formation and interface grain boundary migration in 3DIC Cu-Cu bonding

材料科學與工程學系所

三維積體電路、銅銅接合、孔洞、可靠度、晶界遷移、晶粒成長、3DIC、Cu-Cu bonding、voids、reliability、grain boundary migration、grain growth

Co/Ni-Based Perovskite Type Electrocatalyst for Nitrate Reduction Reaction

材料科學與工程學系所・共同指導：林健正、林彥谷

鈣鈦礦、硝酸鹽還原反應、產氨反應、X光吸收光譜、電催化還原、perovskite、nitrate reduction reaction、ammonia、X-ray Absorption Spectroscopy(XAS、electrochemical reduction reaction

Effect of Atmosphere on the "SiC KOH Etching Pits"

工學院半導體材料與製程設備學程

第三代半導體、寬能隙半導體、碳化矽、碳化矽缺陷、Third generation semiconductor、Wide band gap、SiC、TED、TSD

Effect of compressive stress on the reliability of 3D IC Cu-Cu bonding through the evolution of interfacial voids

工學院半導體材料與製程設備學程

三維積體電路、孔洞的演化、矽穿孔技術、化學機械研磨、銅-銅接合、電鍍銅銅柱、3D IC、Void evolution、Through Silicon Via、Chemical mechanical polishing、Cu-Cu bonding、Electroplated copper pillar

Optimization of Al/Cu Interface of DBAC Substrate Using a Silver Metallic Interlayer

材料科學與工程學系所・共同指導：林健正、林昆霖

陶瓷基板、銀箔、中間層、奈米壓痕、熱循環試驗、可靠度、ceramic substrate、silver foil、interlayer、nano-indentation、thermal cycling test、reliability

The effect of (111)-oriented nano-twinned copper on the evolution of voids in Cu-Cu bonding for 3DIC

工學院半導體材料與製程設備學程

3DIC、銅銅接合、孔洞癒合、可靠度、(111)面奈米雙晶銅、Cu-Cu bonding、Void healing、Reliability、(111)-oriented nano-twinned Cu

Improvement of The Collector to Emitter Breakdown Voltage of Bipolar Junction Transistor PNP Device

工學院半導體材料與製程設備學程

雙極性接面電晶體、橫向PNP元件、崩潰電壓、四乙氧基矽烷(TEOS)、電漿輔助化學氣相沈積、應力、氧化、bipolar junction transistor、lateral PNP device、breakdown voltage、tetraethoxysilane (TEOS)、plasma-assisted chemical vapor deposition、stress、oxidation

Photoconduction properties of crystalline Selenium based photodetectors with Gallium Oxide hole blocking layer

工學院半導體材料與製程設備學程・共同指導：潘扶民

結晶硒、可見光感測器、暗電流、亮電流、阻障層、crystalline selenium、visible light photodetector、dark current、photocurrent、blocking layer

Low Temperature Cu-Cu Bonding Technology in 3D Integration - Bonding Mechanisms and Reliability

材料科學與工程學系所

銅-銅接合、人工孔隙、接合機制、可靠度、低溫接合、Cu-Cu Bonding、Artificial void、Bonding Mechanisms、Reliability、Low temperature bonding

Effect of thermal treatment on the reliability and the microstructure of SnAg solder

工學院半導體材料與製程設備學程

可靠度、銅柱、錫銀銲錫、金屬化合物、溫度循環、Reliability、Cu pillar、SnAg solder、intermetallic compounds、Temperature cycle test

Effect of dishing on the void evolution in Cu-Cu wafer bonding for 3DIC

材料科學與工程學系所

三維積體電路、銅銅接合、孔洞演變、化學機械研磨、可靠度、3DIC、CMP、Cu Cu Bonding

Effect of Dishing on the Cu Pillar Bonding for 3DIC

材料科學與工程學系所

三維積體電路、矽穿孔技術、化學機械研磨、銅銅接合、電鍍銅銅柱、3DIC、TSV、CMP、Cu-Cu bonding、electroplated copper pillar

Innovative ZnO-based Nanocomposites for UV Light/Gas Dual Sensing Applications

材料科學與工程學系所・共同指導：陳祥

氧化鋅、硫化鋅、奈米柱、奈米金粒子、奈米複合材料、殼層結構、火柴頭結構、氣體感測、紫外線光感測、ZnO、ZnS、nanorods、Au nanoparticles、nanocomposites、core-shell nanostructure、match-head nanorods、gas sensing、UV light sensing

Effects of Surface Wet Etching of the Polycrystalline Silicon on the Deposition Thickness Variation of Silicon Nitride Films

工學院半導體材料與製程設備學程

多晶矽蝕刻、氮化矽薄膜沉積厚度、Polysilicon etching、Thickness of silicon nitride film deposition

Effect of (111)-oriented nanotwinned copper on the evolution of voids in Cu-Cu wafer bonding for 3DIC

材料科學與工程學系所

三維積體電路、銅銅接合、孔洞演變、(111)平面奈米雙晶銅、可靠度、Three-dimensional integrated circuit (3DIC)、Copper-copper bonding、Voids evolution、(111)-oriented nanotwinned copper、Reliability

Effect of Compressive Load on the Cu-Cu Wafer Bonding for 3DIC

材料科學與工程學系所

三維積體電路、矽穿孔技術、化學機械研磨、銅銅接合、電鍍銅銅柱、3DIC、TSV、CMP、Cu-Cu bonding、electroplated copper pillar

High-Safety Ionic Liquid Hybrid Electrolytes for Lithium-Ion Batteries

材料科學與工程學系所・共同指導：張仍奎、王俊杰

碳酸酯類電解質、離子液體電解質、複合型電解質、鋁腐蝕抑制劑、CEI成膜劑、Carbonate electrolyte、Ionic liquid electrolyte、Hybird electrolyte、Additive、CEI form

Nano-scale Depth Profiles on Electrical Properties of Poly-Silicon Substrate Doped Phosphorus and Boron

材料科學與工程學系奈米科技碩博士班

多晶矽、載子活化、縱深分析、CO2雷射退火、微分霍爾量測、Poly-Silicon、Carrier activation、Depth profiles、CO2 laser annealing、Differential Hall Effect Measurement

Evolution of Voids in Electroplated Cu-Cu Wafer Bonding

材料科學與工程學系奈米科技碩博士班

銅-銅晶圓鍵合、界面空洞演變、電鍍銅、可靠性、三維積體電路、Cu-Cu Wafer Bonding、Interfacial void evolution、Electroplated Cu、Reliability、3DIC

The Effect of Pd Passivation Layer on 3DIC Cu-Cu bonding

材料科學與工程學系所

三維積體電路、金屬接合、矽穿孔、孔洞、鈍化層、wafer bonding、3DIC、TSV、passivation layer、wafer annealing

The Study of Molybdenum Disulfide Growth by Double Casing Tube

材料科學與工程學系所

二維材料、二硫化鉬、化學氣相沉積法、氧化、量子點、Two-dimensional materials、MoS2、chemical vapor deposition、oxidation、quantum dots

Evolution of Artificial Voids in Highly (111)-Oriented Cu/Sputtered-Cu Bonded Interface

材料科學與工程學系所

銅銅接合、接合、孔洞、癒合、Cu-Cu Bonding、bonding、void

Nano-scale Depth Profiles on Electrical Properties of Silicon Substrate Doped Arsenic, Phosphorus, and Boron

材料科學與工程學系所

微分霍爾效應量測、縱深電性、二氧化碳雷射退火、快速熱退火、Differential Hall Effect Metrology、Electrical depth profile、CO2 laser annealing、Rapid thermal annealing

Defects of collision between wafer and semiconductor equipment

工學院半導體材料與製程設備學程

缺陷、微塵粒子、一次性因子、田口方法、特性要因、Defect、Particle、One off factor、Taguchi method、Cause and effect analysis

Improved leakage current divergence of 2VPMOS for Power Management Integrated Circuit (PMIC)

工學院半導體材料與製程設備學程

電源管理晶片、漏電流、田口方法、自動對準金屬矽化物製程、快速熱回火製程、Power Management Integrated Circuit、Leakage current、Taguchi method、Self-Aligned Silicide、Rapid Thermal Annealing

Effect of sputtered Titanium surface roughness on the thickness of Tungsten plug

工學院半導體材料與製程設備學程

薄膜製程、阻障層、鎢厚度異常、Thin Film、Barrier layer、Tungsten plug thickness unstable

Improved Defect Induced Device Leakage in Shallow Trench Isolation Process

工學院半導體材料與製程設備學程

淺溝渠隔離製程、應力、缺陷、差排、退火製程、高密度電漿化學氣相沉積、離子佈植製程、Shallow Trench Isolation、stress、defecct、dislocation、high density plasma chemical vapor deposition、ion implantation

The Effect of Pd Passivation Layer on the Evolution of Artificial Voids at the 3DIC Copper Bonding Interface

材料科學與工程學系所

銅金屬、接合、孔洞、癒合、copper、bonding、3dic、void

The Evolution of Artificial Voids in the 3DIC Bonded Copper interface

材料科學與工程學系所

銅銅接合、介面孔洞、3D IC、Copper bonding、Artificial Voids

Modification of Wet etching Pattern Sapphire Substrate and AlN Buffer Layer to Improve the Quality of GaN

材料科學與工程學系所

發光二極體、氮化鎵、磊晶、圖形化藍寶石基板、溼蝕刻、氮化鋁緩衝層、LED、GaN、Epitaxy、PSS、AlN、Buffer layer

Improved Signal Performance in Limited Space

理學院應用科技學程

基板、substrate

Improving Laser Lift-off GaN Quality by Using Wet-Etched Patterned Sapphire Substrate

材料科學與工程學系奈米科技碩博士班

濕蝕刻、圖形化藍寶石基板、氮化鎵、雷射剝離、發光二極體、wet etch、patterned sapphire substrate、GaN、laser lift-off、LED

The Evolution of the Void in Copper Bonding of 3DIC

材料科學與工程學系所

三維積體電路、銅銅接合、孔洞、3DIC、copper bonding、void

Growth of GaN on Patterned AlN on Sapphire Substrate

材料科學與工程學系所

磊晶、藍寶石基板、氮化鋁、氮化鎵、緩衝層、Expitaxy、GaN、AlN、Sapphire、Buffer layer

The Evolution of the Voids in Highly (111)-Oriented Cu-Cu Wafer Bonding for 3DIC

材料科學與工程學系所

銅銅接合、奈米雙晶銅、Cu-Cu Bonding、Nanotwined

Laterally diffused metal oxide semiconductor (LDMOS) device performance research

工學院半導體材料與製程設備學程

高壓元件、導通電阻、淺溝槽、崩潰電壓、飄移區、LDMOS、Drift area、Ron、HV device、Breakdown voltage、STI

GaN Layer Grown on Pattern Sapphire Substrate with Oxide Spacer

工學院半導體材料與製程設備學程

氮化鎵、磊晶、氧化層間隙壁、雷射剝離、圖形化藍寶石基板、GaN、Epitaxy、Oxide spacer、Laser lift off、Pattern sapphire substrate

Modification of patterned sapphire substrate LED 1. Nucleation layer of patterned sapphire substrate with sidewall oxide covered 2. Changing the size of LEDs by FIB

材料科學與工程學系所

發光二極體、圖形化藍寶石基板、雷射剝離、LED、PSS、LLO

Improving Laser Lift-off GaN Processes by Patterned Sapphire Substrate

材料科學與工程學系奈米科技碩博士班

圖形化藍寶石基板、雷射剝離、氮化鎵型發光二極體、patterned sapphire substrate、laser lift-off、GaN-LED

A HfOx RRAM with vertical stacking structure for embedded memory array

工學院半導體材料與製程設備學程

電阻式記憶體、氧化鉿、迷你陣列、RRAM、HfOx、Miniarray

Fabrication and Characterization of Ohmic Contacts formed by Multi-layer Metal Stack on InGaAs

材料科學與工程學系所

砷化銦鎵、微結構、接觸電阻、多層金屬堆疊、InGaAs、Microstructures、Contact resistivity、Multilayer metal stack

Improve the double side polishing process of sapphire substrates

工學院半導體材料與製程設備學程

雙面拋光機、藍寶石基板、轉速、移除率、穿透率、Double side polishing machine、Sapphire substrate、rotating speed、remove rate、transmittance

Effect of Modifying Wet-etched Patterned Sapphire Substrate on GaN Epitaxial Behavior using AlN as buffer layer

材料科學與工程學系所

藍寶石基板、溼蝕刻、氮化鋁緩衝層、發光二極體、氮化鎵磊晶、sapphire、wet-etched、AlN buffer layer、LED、GaN epitaxy

Improved GaN quality by modifying sputter AlN buffer layer on pattern sapphire substrate

材料科學與工程學系所

圖形化藍寶石基板、氮化鋁、pattern sapphire substrate、AlN

Epitaxy of GaN Film on Patterned Substrate

材料科學與工程學系所

氮化鎵、圖案化藍寶石基板、發光二極體、磊晶、有機金屬化學氣相沉積、氮化鋁、碳化矽基板、GaN、patterned sapphire substrate、LED、epitaxy、MOCVD、AlN、SiC、light-emitting diode

GaN Based LED’s Grown on Patterned Sapphire Substrate and The Comparison of SnO2 and Ti-doped SnO2 Sensing Membrane Applied for EIS Based Bio-Sensing Applications

材料科學與工程學系所・共同指導：高泉豪

氮化鎵、鈦摻雜二氧化錫、化氧化錫基板、感測薄膜、GaN LED's、Patterned Sapphire Substrate、Bio-Sensing、Ti-doped SnO2

Relibility test for different Solder (SnAg)height on copper pillar

工學院半導體材料與製程設備學程

銅導柱、多次迴焊、溫度循環、高溫儲存、介金屬化合物、Cu pillar bump、Multi reflow、Temperature cycle test、High temperature storage、Intermetallic compounds

Aluminum Doped Zinc Oxide Transparent Conductive Oxide Thin Film Deposited by Arc Ion Plating System

平面顯示技術碩士學位學程

電弧離子鍍膜、氧化鋁鋅、透明導電薄膜、Arc ion plating、AZO、Transparent conductive oxide thin film

The Location and Root Cause of the VLSI Leakage Path

工學院半導體材料與製程設備學程

失效分析、電性分析、漏電、OBIRCH、InGaAs、Thermal emmi、ASIC、IP、Fourier Transform

Effect of AlN Buffer Layer on the GaN Grown on Patterned Sapphire Substrate

工學院半導體材料與製程設備學程

氮化鋁、緩衝層、圖形化藍寶石基板、氮化鎵、AlN、Buffer Layer、Patterned Sapphire Substrate、GaN

Patterned 4H-SiC Substrate for the Epitaxy of GaN

材料科學與工程學系奈米科技碩博士班

碳化矽、氮化鎵、磊晶、4H-SiC、GaN、Epitaxy

Improve GaN quality with sputter AlN buffer layer on wet-etched and dry-etched PSS

材料科學與工程學系所

氮化鋁、緩衝層、圖型化藍寶石基板、AlN、buffer layer、PSS

Fabricate High Thermal Dissipation Composite Substrate by Cu Electroplating Technology for Thermal Management

材料科學與工程學系所

晶圓接合、散熱基板、複合材料、Bonding、Thermal Dissipation Substrate、Diamond Composite

Exploration of failure mechanisms in Sn-Ag-Cu solder joints under thermal cycling test by modulation of Ag content in solder and the selection of surface finish

材料科學與工程學系所・共同指導：杜正恭

電子構裝、銲接系統、可靠度、熱循環、晶圓級尺寸封裝、銀、electronic packaging、solder joint、reliability、thermal cycling、WLCSP、Ag

Effect of Active Layer Thickness on the Performance of LTPS TFTs on the Flexible Substrate

平面顯示技術碩士學位學程

薄膜電晶體、可撓式基板、雷射結晶、非晶矽、低溫多晶矽、主動層、TFT、LTPS、ELA、a-Si、p-Si、active layer

The fabrication and characterization of hydrogen doped indium oxide by RF-sputter method

工學院半導體材料與製程設備學程

以射頻磁控濺鍍氣相沉積法製備參氫的氧化銦薄膜

Improved Cleaning Process of Al Metal Line

工學院半導體材料與製程設備學程

旋轉濕式清洗機台、槽式清洗機台、電化學反應、天線效應、尖端放電、SWC、DSP、Boom swing、Electrochemistry issue、Corona discharge、Antenna effect、plasma charging

Effects of patterned sapphire substrates on orientation relationship of GaN and Improvement of epitaxy GaN quality

材料科學與工程學系所

圖型化藍寶石基板、磊晶面向、氮化鎵、patterned sapphire substrates、orientation relationship、GaN

Microelectromachining Cu/Si/Diamond Composite for Thermal Management - Improvement of LED Thermal Dissipation

材料科學與工程學系所

發光二極體、散熱、鑽石複合材料、Light Emitting Diode、Heat Dissipation、Diamond Composite

GaN grown on the side plane of large size wet etching Patterned Sapphire Substrate

材料科學與工程學系所

發光二極體、圖形化藍寶石基板、濕蝕刻、氮化鎵、特殊平面磊晶、LED、sapphire、PSS、wet etching、GaN、epitaxy

Thermal Management in High Power Device by using Monolayer-Diamond-Cu Composite

工學院半導體材料與製程設備學程

熱模擬、熱管理、高功率元件熱管理、ANSY熱模擬、單層鑽石銅複合材料、鑽石複合材料熱阻、散熱基板、鑽石複合材料熱傳導係數、Thermal Simulation、ANSYS、theraml management、Monolayer-Diamond-Cu Composite、thermal conductivity、thermal resistance、Thermal management of high power devices、Heat radiation substrate

GaN grown on {12-35} by using Dash Patterned Sapphire Substrate

材料科學與工程學系所

圖形化藍寶石基板、氮化鎵、Patterned Sapphire Substrate、gallium nitride

Improvement of Photoresist coating abnormal shadow arrow study in Lithography Production

工學院半導體材料與製程設備學程

微影製程、光阻塗佈、箭影異常、光阻流體、旋轉塗佈異常、Lithography、photoresist coating、abnormal shadow arrows、resist fluid、Resist spin coating abnormal

Improvement of big size TFT-LCD line defect inspection leakage

平面顯示技術碩士學位學程

液晶顯示器面板、線缺陷、測試、TFT-LCD、Line defect、Inspection

Flexible display panel defect improvement

平面顯示技術碩士學位學程

失效模式與效應分析、品質工具、品質機能展開、柏拉圖、福特8D、雷射、FMEA、QC Tools、QFD、Pareto Diagram、Eight Disciplines Problem Solving、8D、Laser

Reduction of Forward Voltage of High Power Transient Voltage Suppressor

工學院半導體材料與製程設備學程・共同指導：陳智

突波抑制器、低順向壓降、Transient Voltage Suppressor、low forward voltage drop

High thermal conductivity diamond composite material for high power LED die attach

工學院半導體材料與製程設備學程

高功率發光二極體、高熱導固晶材料、鑽石複合固晶材、散熱管理、High power LED、High thermal conductivity die attach material、diamond compiste die attach、Thermal Management

Liff-off GaN epitaxy layer from patterned sapphire substrate by thermal cycle and stress concentration process

材料科學與工程學系所

氮化鎵、剝離、熱應力集中、熱循環、GaN、Lift-off、stress concentration、thermal cycle

Effects of Different Patterned Sapphire Substrate Surface Morphology on Performance of GaN-based LEDs

材料科學與工程學系所

發光二極體、圖案化藍寶石基板、氮化鎵、Light-Emitting Diodes、LEDs、Patterned Sapphire Substrate、PSS、GaN

Effect of polishing processes on the total thickness variation of sapphire substrates

平面顯示技術碩士學位學程

藍寶石、拋光製程、sapphire、polishing processes

Thermal Management in High Brightness Light Emitting Diodes By Using Cu/Diamond/Si Composite

材料科學與工程學系所

散熱管理、發光二極體、鑽石複合材料、熱導率、熱阻、theraml management、light emitting diodes、diamond composite、thermal conductivity、thermal resistance

Effect of lapping processes on the total thickness variation of sapphire substrates

平面顯示技術碩士學位學程

研磨、B4C、藍寶石基板、Lapping、Sapphire

A Study of CoSi2 Fabricaton

工學院半導體材料與製程設備學程

二矽化鈷、短通道效應、自動對準金屬矽化物、CoSi2、Short Channel Effect、Self-Aligned Silicide

Improvement of Lithography Overlay Measurement

工學院半導體材料與製程設備學程

微影製程、疊對、光罩、Lithography、Overlay、Mask

GaN-based LEDs grown on nano-scaled patterned sapphire substrates using anodic aluminum oxide as hard mask

材料科學與工程學系所

陽極氧化鋁、奈米、圖形化藍寶石基板、磊晶品質、光取出效率、Anodic aluminum oxide、Nano、Patterned sapphire substrate、Crystal quality、Light extraction efficiency

Effect of the Evolution of Wet-etched Patterned Sapphire on the GaN Epitaxial Behavior

材料科學與工程學系所

發光二極體、圖形化藍寶石基板、濕蝕刻、氮化鎵、Light-emitting diode、Patterned sapphire substrate、Wet etching、Gallium nitride

Effect of dynamic corrosion on dishing behavior in copper chemical mechanical planarization

工學院半導體材料與製程設備學程

銅化學機械研磨、研磨液、陷碟、動態腐蝕、Copper CMP、Slurry、Dishing、Dynamic corrosion

Lift-off GaN epitaxy layer from patterned sapphire substrate by bonding lift-off process

材料科學與工程學系所

氮化鎵、藍寶石基板、剝離、晶圓接合、GaN、sapphire substrate、lift-off、wafer bonding

Laser Doping Emitter in c-Si Solar Cell

工學院半導體材料與製程設備學程

太陽能電池、發射極、雷射、solar cell、emitter、laser

Effect of laser lift-off process on the pattern sapphire substrates of LED device

材料科學與工程學系所

雷射剝離、圖形化藍寶石基板、laser lift-off、pattern sapphire substrates

Improvement of TFT-LCD Driver IC Bonding Process

平面顯示技術碩士學位學程

TFT-LCD、驅動IC、壓合、漏光、driver IC、bonding、light leakage

Improvement of Trench Gate MOSFET Gate Oxide Process

工學院半導體材料與製程設備學程

溝槽式閘極金氧半場效電晶體、垂直式爐管四氧乙基矽低壓化學氣相沉積、閘極氧化層製程、UMOSFET、VERTICAL FURNACE TEOS LPCVD、GATE OXIDE PROCESS

Interfacial morphologies and electrical properties of wafer bonded p-Ge/n-Si

材料科學與工程學系所

晶圓接合、矽鍺、wafer bonding、SiGe

Interface morphologies and electrical properties of bonded Ge/Si wafers

材料科學與工程學系所

鍺、矽、接合、Gemanium、Silicon、bonding

Improved the uniformity of Gate Oxide Thickness of High Voltage Devices

工學院半導體材料與製程設備學程

熱氧化、閘極氧化層、回火、thermal oxidation、Gate Oxide、Anneal

Improved Crystal Quality and Performance of GaN-based LEDs by using Modified Pattern on Different Oriented Sapphire Substrate

材料科學與工程學系所

圖案化藍寶石、A軸、乾蝕刻、濕蝕刻、Pattern Sapphire、A-plane、Dry etch、Wet etch

Improvement of Epitaxy GaN Quality Using Nano-Patterned Sapphire Substrates and Grown Semipolar GaN Epilayer on a-Plane Patterned Sapphire Substrates

材料科學與工程學系所

圖案化藍寶石基板、氮化鎵、液相沉積法、半極性、晶體方向、發光二極體、PSS、GaN、LPD、semipolar、crystal orientation、LED

The formation and reduction of linear silicon dioxide contamination in APCVD processes

工學院半導體材料與製程設備學程

線狀氧化矽汙染、線狀型汙染、silicon contamination、linear contamination

The improvement on the bonding strength between diamond particles and the piano wire for high speed ingot cutting

工學院半導體材料與製程設備學程

高速切割線、high speed ingot cutting

The effect of interaction between ITO and silicon nitride gate insulator in a-Si:H TFT

工學院半導體材料與製程設備學程

薄膜電晶體液晶顯示器、閘極絕緣層、氮化物、開口率、TFT-LCD、gate-insulator、Nitride、aperture ratio

Improving GaN-based LED performance by plasma treated wet-etched pattern-sapphire-substrates

材料科學與工程學系所

發光二極體、圖案化藍寶石基板、電漿處理、氮化鎵、乾蝕刻、LED、patterned sapphire substrate、plasma treatment、GaN、dry etching

Improved the ESD capability of 0.5μm high voltage device

工學院半導體材料與製程設備學程

靜電放電、ESD

Improvement of the Fabrication Process of Field Diffusion Metal-Oxide-Semiconductor Field-Effect Transistor using Cause-Effect Diagram

工學院半導體材料與製程設備學程

金氧半場效電晶體、高壓、MOSFET、HV

Improved performance and reliability of MIC LTPS-TFTs using simply chemical oxide and drive-in nickel induced crystallization

材料科學與工程學系所

金屬誘發結晶、低溫多晶矽、薄膜電晶體、漏電流、可靠度、化學氧化物、驅入式結晶法、鈍化、metal-induced crystallization、low temperature polycrystalline silicon、thin film transistor、leakage current、reliability、chemical oxide、driven-in nickel induced crystallization、passivation

The Root Cause and Improvement of GIDL Breakdown in High Voltage nMOSFETs

工學院半導體材料與製程設備學程

閘極引發汲極漏電流、接面崩潰、GIDL、Punch Through、Junction Breakdown